IRFW540ATM N-Channel 100V 28A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFW540ATM is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by onsemi, rated for 100V drain-to-source voltage and 28A continuous drain current in a surface mount D2PAK package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The part operates across a temperature range of -55°C to 175°C and is suitable for switching applications requiring moderate current handling in compact surface mount form factors.

Substiute Parts

IRFW540ATM

onsemiIn Stock: 2295IRFW540ATM Datasheet

Current PartRFQ

PHB27NQ10T,118

Nexperia USA Inc.In Stock: 7999PHB27NQ10T,118 Datasheet

SimilarRFQ

STB30NF10T4

STMicroelectronicsIn Stock: 16189STB30NF10T4 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFW540ATM is determined by electrical and mechanical parameter compatibility within the N-Channel MOSFET category. The critical parameters that define substitution eligibility are:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
• Continuous Drain Current (Id): Must equal or exceed 28A at 25°C
• Gate Threshold Voltage (Vgs(th)): Must be compatible at specified test conditions
• Maximum Gate Voltage (Vgs): Must support ±20V operation
• Operating Temperature Range: Must encompass -55°C to 175°C

Mechanical Compatibility Criteria:

• Package Type: Must be D2PAK (TO-263-3) surface mount configuration
• Mounting Type: Surface mount only
• Lead configuration: 2 Leads + Tab

The substitute parts identified—PHB27NQ10T,118 and STB30NF10T4—meet or exceed all electrical parameters while maintaining identical mechanical packaging. Both substitutes are classified as active products with current manufacturing status, providing long-term availability advantages over the obsolete IRFW540ATM.

Parameter Comparison

Engineering Selection Recommendations

PHB27NQ10T,118 (Nexperia USA Inc.): This substitute provides direct electrical equivalence to the IRFW540ATM with matched 28A continuous drain current and 100V Vdss rating. The PHB27NQ10T,118 demonstrates improved on-resistance characteristics (50 mOhm versus 52 mOhm) and significantly reduced gate charge (30 nC versus 78 nC), resulting in lower switching losses and improved thermal efficiency. The device is classified as active with current manufacturing status and carries RoHS3 compliance certification. Packaging is specified as Tape & Reel (TR), suitable for automated assembly processes. This part is recommended for direct replacement in applications where the original IRFW540ATM specifications are fully met.

STB30NF10T4 (STMicroelectronics): This substitute exceeds the IRFW540ATM specifications with a higher continuous drain current rating of 35A at 25°C, providing design margin for applications approaching the 28A limit. The STB30NF10T4 offers superior on-resistance (45 mOhm) and reduced gate charge (55 nC), delivering improved switching performance and thermal characteristics. Power dissipation capability is increased to 115W (Tc) compared to 107W (Tc) of the original part. The device is active with current manufacturing status and RoHS3 compliant. Packaging is specified as Cut Tape (CT) & Digi-Reel®. This part is suitable for applications requiring enhanced current handling capacity or improved thermal performance within the same package footprint.

Both substitutes maintain identical operating temperature ranges (-55°C to 175°C), maximum gate voltage ratings (±20V), and MSL classification (1, Unlimited), ensuring compatibility with the original design environment and handling requirements.

Frequently Asked Questions (FAQ)

Q: Can the PHB27NQ10T,118 be used as a direct replacement for the IRFW540ATM?

A: Yes. The PHB27NQ10T,118 meets all electrical and mechanical requirements for direct substitution. Both devices are rated for 100V Vdss, 28A continuous drain current, and use identical D2PAK surface mount packaging. The PHB27NQ10T,118 demonstrates improved performance characteristics with lower on-resistance and gate charge.

Q: What is the primary advantage of the STB30NF10T4 over the IRFW540ATM?

A: The STB30NF10T4 provides higher continuous drain current (35A versus 28A), lower on-resistance (45 mOhm versus 52 mOhm), and increased power dissipation capability (115W versus 107W). These characteristics result in reduced thermal stress and improved switching efficiency in high-current applications.

Q: Are both substitute parts available in the same packaging as the original IRFW540ATM?

A: Both substitutes use the D2PAK (TO-263-3) surface mount package with identical lead configuration (2 Leads + Tab). However, packaging format differs: PHB27NQ10T,118 is supplied in Tape & Reel (TR), while STB30NF10T4 is supplied in Cut Tape (CT) & Digi-Reel®. Both formats are compatible with standard surface mount assembly equipment.

Q: What is the significance of the gate charge difference between these parts?

A: Gate charge (Qg) directly affects switching speed and driver power requirements. The PHB27NQ10T,118 has significantly lower gate charge (30 nC versus 78 nC), requiring less driver current and reducing switching losses. The STB30NF10T4 has intermediate gate charge (55 nC), balancing performance with cost considerations.

Q: Are the substitute parts RoHS compliant?

A: Both substitute parts carry RoHS3 compliance certification. The original IRFW540ATM does not specify RoHS status. All three parts are REACH Unaffected and carry identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Q: Can these parts be used interchangeably in existing PCB designs?

A: Yes. All three parts use identical D2PAK surface mount footprints and pin configurations. No PCB layout modifications are required for substitution. Electrical parameter compatibility ensures functional equivalence within the original circuit design specifications.

Q: What is the product status significance for long-term procurement?

A: The IRFW540ATM is classified as obsolete, indicating discontinued manufacturing and limited future availability. Both substitute parts are classified as active, ensuring continued manufacturing and long-term procurement availability. Active status is critical for designs requiring component availability beyond the immediate term.

Q: How do the input capacitance values affect circuit performance?

A: Input capacitance (Ciss) influences gate drive circuit design and switching transient response. The PHB27NQ10T,118 (1240 pF) and STB30NF10T4 (1180 pF) have lower input capacitance than the IRFW540ATM (1710 pF), resulting in faster switching transitions and reduced driver power dissipation. This improvement is particularly beneficial in high-frequency switching applications.

Q: Are moisture sensitivity levels identical across all three parts?

A: Yes. All three parts carry MSL classification of 1 (Unlimited), indicating no moisture sensitivity restrictions. Identical handling, storage, and reflow requirements apply to all three devices.