IRFU5505 Equivalent & Substitute Parts

Part Overview

The IRFU5505 is a P-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage and 18A continuous drain current in a Through Hole IPAK (TO-251AA) package. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and component procurement.

Substiute Parts

IRFU5505
Infineon TechnologiesIn Stock: 6437IRFU5505 Datasheet
IRFU5505
Current Part
FQU17P06TU
onsemiIn Stock: 7859FQU17P06TU Datasheet
FQU17P06TU
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 18 A (Tc)
Rds On (Max) @ Id, Vgs 110 mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10V
Power Dissipation (Max) 57 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
RoHS Status RoHS non-compliant

Substitute Part Grouping Explanation

Substitution of the IRFU5505 is determined by electrical and mechanical compatibility within the P-Channel MOSFET category. The primary substitution criteria are:

Electrical Compatibility:

  • P-Channel FET topology (required)
  • Drain-to-source voltage rating equal to or greater than 55V
  • Continuous drain current rating equal to or greater than 18A
  • Gate threshold voltage (Vgs(th)) within compatible range
  • On-state resistance (Rds On) suitable for thermal and power dissipation requirements
  • Operating temperature range spanning -55°C to 150°C

Mechanical Compatibility:

  • Through Hole mounting type
  • IPAK (TO-251AA) package footprint

The FQU17P06TU from onsemi meets these criteria with a 60V rating, 12A continuous drain current, and identical package configuration. While the current rating is lower than the IRFU5505, the voltage rating is higher, and the device operates within the same temperature range and package standard.

Parameter Comparison

Parameter IRFU5505 (Infineon) FQU17P06TU (onsemi) Unit
FET Type P-Channel P-Channel
Drain to Source Voltage (Vdss) 55 60 V
Current - Continuous Drain (Id) @ 25°C 18 12 A (Tc)
Rds On (Max) @ Id, Vgs 110 @ 9.6A, 10V 135 @ 6A, 10V mOhm
Vgs(th) (Max) @ Id 4 @ 250µA 4 @ 250µA V
Gate Charge (Qg) (Max) @ Vgs 32 @ 10V 27 @ 10V nC
Vgs (Max) ±20 ±25 V
Input Capacitance (Ciss) (Max) @ Vds 650 @ 25V 900 @ 25V pF
Power Dissipation (Max) 57 (Tc) 44 (Tc) W
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
RoHS Status RoHS non-compliant ROHS3 Compliant

Engineering Selection Recommendations

Product Status Consideration: Both the IRFU5505 and FQU17P06TU are classified as obsolete. The FQU17P06TU carries ROHS3 compliance, whereas the IRFU5505 is RoHS non-compliant. For new designs or systems requiring regulatory compliance with modern environmental standards, the FQU17P06TU is the appropriate selection.

Electrical Performance: The FQU17P06TU provides a higher voltage rating (60V versus 55V), which offers additional design margin in applications where the supply voltage approaches the device rating. The continuous drain current of the FQU17P06TU (12A) is lower than the IRFU5505 (18A). Applications requiring the full 18A continuous current capability cannot be directly substituted with the FQU17P06TU without circuit redesign or parallel device configuration.

Thermal Characteristics: The IRFU5505 dissipates 57W (Tc), while the FQU17P06TU dissipates 44W (Tc). In thermally constrained applications, the lower power dissipation of the FQU17P06TU may provide operational advantages.

Package Compatibility: Both devices use identical Through Hole IPAK (TO-251AA) packaging, ensuring mechanical and thermal interface compatibility without PCB redesign.

Frequently Asked Questions (FAQ)

Q: Can the FQU17P06TU directly replace the IRFU5505 in all applications?

A: Direct substitution is limited by current rating. The FQU17P06TU is rated for 12A continuous drain current, while the IRFU5505 is rated for 18A. Applications operating at or above 12A require circuit analysis to confirm the FQU17P06TU operates within safe thermal and electrical limits. Applications below 12A are compatible.

Q: What is the significance of the voltage rating difference (55V versus 60V)?

A: The FQU17P06TU's higher 60V rating provides additional design margin and can operate safely in circuits where the IRFU5505's 55V rating would be marginal. This is advantageous for applications with voltage transients or supply variations.

Q: Are the packages physically identical?

A: Yes. Both devices use the TO-251-3 Short Leads IPAK (TO-251AA) package. PCB footprints and thermal interface requirements are identical, allowing direct mechanical substitution without layout changes.

Q: What is the impact of the RoHS compliance difference?

A: The IRFU5505 is RoHS non-compliant, while the FQU17P06TU is ROHS3 compliant. For applications subject to environmental regulations or customer requirements mandating RoHS compliance, the FQU17P06TU is the required selection.

Q: How do the on-state resistance values compare?

A: The IRFU5505 has Rds On of 110 mOhm (at 9.6A, 10V), while the FQU17P06TU has Rds On of 135 mOhm (at 6A, 10V). The IRFU5505 exhibits lower on-state resistance, resulting in lower conduction losses. Applications sensitive to power dissipation should account for this difference.

Q: Are gate charge characteristics compatible?

A: Yes. The gate charge values are similar: 32 nC for the IRFU5505 and 27 nC for the FQU17P06TU, both at 10V. Gate drive circuits designed for the IRFU5505 operate within acceptable parameters for the FQU17P06TU.

Q: What is the thermal performance difference?

A: The IRFU5505 dissipates 57W (Tc), while the FQU17P06TU dissipates 44W (Tc). The lower power dissipation of the FQU17P06TU reduces thermal management requirements in applications operating below 12A continuous current.

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