IRFU4105ZPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFU4105ZPBF is an N-Channel MOSFET manufactured by Infineon Technologies, featuring a 55V drain-to-source voltage rating and 30A continuous drain current capability in a Through Hole IPAK (TO-251AA) package. This device is classified as Obsolete, necessitating identification of equivalent substitute components for ongoing design support and procurement continuity. The HEXFET® series designation indicates advanced gate oxide technology suitable for switching applications requiring moderate voltage and current ratings.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	30	A
On-State Drain Resistance (Rds On) @ 18A, 10V	24.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	27	nC
Power Dissipation (Max)	48	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-251-3 (IPAK)	—

Substitute Part Grouping Explanation

Substitution of the obsolete IRFU4105ZPBF is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss) must equal or exceed 55V
Continuous Drain Current (Id) must equal or exceed 30A at 25°C
Gate drive voltage compatibility at 10V
Operating temperature range must encompass -55°C to 175°C
On-state resistance (Rds On) characteristics must support application current requirements

Mechanical Compatibility Criteria:

Package type must be Through Hole IPAK (TO-251AA)
Pin configuration must match TO-251-3 Short Leads standard

Compliance Requirements:

RoHS3 compliance mandatory
REACH unaffected status required

The IRFU4615PBF qualifies as a direct substitute based on these parameters while offering enhanced electrical performance characteristics.

Parameter Comparison

Parameter	IRFU4105ZPBF	IRFU4615PBF	Unit
Manufacturer	Infineon Technologies	Infineon Technologies	—
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	55	150	V
Continuous Drain Current (Id) @ 25°C	30	33	A
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Vgs 10V	24.5 @ 18A	42 @ 21A	mOhm
Gate Threshold Voltage (Vgs(th))	4 @ 250µA	5 @ 100µA	V
Gate Charge (Qg) @ 10V	27	26	nC
Vgs (Max)	±20	±20	V
Power Dissipation (Max)	48	144	W
Operating Temperature	-55 to 175	-55 to 175	°C
Mounting Type	Through Hole	Through Hole	—
Package / Case	TO-251-3 (IPAK)	TO-251-3 (IPAK)	—
Product Status	Obsolete	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
REACH Status	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

The IRFU4615PBF is qualified as a direct substitute for the obsolete IRFU4105ZPBF based on the following engineering criteria:

Package Compatibility: Both devices utilize identical Through Hole IPAK (TO-251AA) packaging with TO-251-3 Short Leads configuration, ensuring mechanical and thermal interface compatibility without PCB redesign.

Electrical Performance: The IRFU4615PBF exceeds the minimum electrical requirements of the IRFU4105ZPBF across all critical parameters. The 150V Vdss rating provides enhanced voltage margin over the 55V requirement. The 33A continuous drain current rating exceeds the 30A specification. Gate charge characteristics remain comparable at 26nC versus 27nC, supporting equivalent switching performance.

Regulatory Compliance: Both devices maintain ROHS3 compliance and REACH unaffected status, satisfying environmental and regulatory requirements for current procurement and deployment.

Product Status: The IRFU4615PBF maintains Active product status with confirmed inventory availability (17,968 pieces), ensuring long-term supply chain continuity compared to the Obsolete IRFU4105ZPBF.

Thermal Performance: The IRFU4615PBF provides superior power dissipation capability at 144W versus 48W, offering thermal design margin for applications operating at elevated ambient temperatures or high duty cycles.

Frequently Asked Questions (FAQ)

Q: Can the IRFU4615PBF directly replace the IRFU4105ZPBF without circuit modification?

A: Yes. Both devices share identical package geometry (TO-251-3 IPAK), pin configuration, and gate drive voltage requirements (10V). The IRFU4615PBF meets or exceeds all electrical specifications of the IRFU4105ZPBF, including voltage rating, current rating, and operating temperature range.

Q: What are the key differences between these two MOSFETs?

A: The primary differences are Drain-to-Source Voltage (150V versus 55V), Power Dissipation capability (144W versus 48W), and On-State Resistance (42mOhm versus 24.5mOhm at respective rated currents). The IRFU4615PBF is a higher-performance variant suitable for applications requiring greater voltage headroom or thermal capacity.

Q: Is the IRFU4615PBF suitable for applications originally designed for the IRFU4105ZPBF?

A: Yes. The IRFU4615PBF is backward compatible for all applications within the IRFU4105ZPBF electrical operating range. The enhanced voltage and power ratings provide additional design margin without requiring circuit topology changes.

Q: Are there any thermal considerations when substituting these devices?

A: The IRFU4615PBF exhibits higher On-State Resistance (42mOhm versus 24.5mOhm), which may result in increased power dissipation at identical current levels. However, the superior power dissipation rating (144W versus 48W) and identical thermal package interface ensure adequate thermal performance in standard applications.

Q: What is the availability status of the IRFU4615PBF?

A: The IRFU4615PBF maintains Active product status with substantial inventory availability (17,968 pieces), ensuring reliable procurement compared to the Obsolete IRFU4105ZPBF.

Q: Do both devices meet current environmental compliance standards?

A: Yes. Both the IRFU4105ZPBF and IRFU4615PBF are ROHS3 compliant and REACH unaffected, satisfying current environmental and regulatory requirements for component procurement and deployment.

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