IRFU210 N-Channel MOSFET 200V 2.6A TO-251AA Equivalent & Substitute Parts

Part Overview

The IRFU210 is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 200V drain-to-source voltage with 2.6A continuous drain current in a Through Hole TO-251AA package. This device is classified as Obsolete, which necessitates identification of equivalent and substitute components for ongoing design support and procurement continuity. The IRFU210 operates across a temperature range of -55°C to 150°C and dissipates up to 2.5W at ambient temperature or 25W at case temperature.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	2.6	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	1.5	Ohm @ 1.6A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.2	nC @ 10V
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	140	pF @ 25V
Power Dissipation (Max)	2.5 (Ta), 25 (Tc)	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	—

Substitute Part Grouping Explanation

Substitution of the IRFU210 is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): 200V minimum
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA (Through Hole)
Gate Threshold Voltage (Vgs(th)): 4V @ 250µA
Maximum Gate Voltage (Vgs): ±20V

Allowable Variation Parameters:

Continuous Drain Current (Id): Equal to or greater than 2.6A
Rds On (Max): Equal to or less than 1.5 Ohm @ specified conditions
Gate Charge (Qg): Equal to or less than 8.2 nC @ 10V
Input Capacitance (Ciss): Equal to or less than 140 pF @ 25V
Power Dissipation: Equal to or greater than 2.5W (Ta) / 25W (Tc)
Operating Temperature Range: Must encompass -55°C to 150°C minimum

Substitute parts meeting these criteria are electrically and mechanically compatible with the IRFU210 in existing circuit designs.

Parameter Comparison

Parameter	IRFU210	IRFU210PBF	IRFU220NPBF
Manufacturer	Vishay Siliconix	Vishay Siliconix	Infineon Technologies
Product Status	Obsolete	Active	Not For New Designs
FET Type	N-Channel	N-Channel	N-Channel
Drain to Source Voltage (Vdss)	200V	200V	200V
Continuous Drain Current (Id) @ 25°C	2.6A (Tc)	2.6A (Tc)	5A (Tc)
Drive Voltage (Max Rds On)	10V	10V	10V
Rds On (Max) @ Id, Vgs	1.5 Ohm @ 1.6A, 10V	1.5 Ohm @ 1.6A, 10V	600 mOhm @ 2.9A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	4V @ 250µA	4V @ 250µA	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.2 nC @ 10V	8.2 nC @ 10V	23 nC @ 10V
Maximum Gate Voltage (Vgs)	±20V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	140 pF @ 25V	140 pF @ 25V	300 pF @ 25V
Power Dissipation (Max)	2.5W (Ta), 25W (Tc)	2.5W (Ta), 25W (Tc)	43W (Tc)
Operating Temperature Range	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)	-55°C to 175°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
RoHS Status	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRFU210PBF (Parametric Equivalent)

The IRFU210PBF is a direct parametric equivalent to the IRFU210, manufactured by Vishay Siliconix with identical electrical specifications and package configuration. The primary distinction is product status: IRFU210PBF is Active, whereas the original IRFU210 is Obsolete. IRFU210PBF achieves ROHS3 compliance, addressing regulatory requirements for new procurement. This substitute is the preferred selection for direct replacement in existing designs without circuit modification.

IRFU220NPBF (Functional Substitute)

The IRFU220NPBF, manufactured by Infineon Technologies, is a functional substitute with enhanced electrical performance characteristics. It maintains the same 200V Vdss rating, gate threshold voltage, and maximum gate voltage as the IRFU210. However, IRFU220NPBF provides higher continuous drain current (5A versus 2.6A), lower on-resistance (600 mOhm versus 1.5 Ohm), and greater power dissipation capability (43W Tc versus 25W Tc). The IRFU220NPBF exhibits higher gate charge (23 nC versus 8.2 nC) and input capacitance (300 pF versus 140 pF), which may affect switching characteristics in gate-drive-limited applications. IRFU220NPBF is classified as Not For New Designs but remains available for legacy system support. ROHS3 compliance is achieved. This substitute is suitable for applications where increased current capacity and thermal performance are beneficial and where gate drive characteristics do not impose constraints.

Frequently Asked Questions (FAQ)

Q: Can IRFU210PBF be used as a direct replacement for IRFU210?

A: Yes. IRFU210PBF is a parametric equivalent with identical electrical specifications and package configuration. The only differences are product status (Active versus Obsolete) and RoHS compliance (ROHS3 versus non-compliant). No circuit modification is required.

Q: What are the key differences between IRFU210 and IRFU220NPBF?

A: Both devices share the same 200V Vdss rating, gate threshold voltage (4V @ 250µA), and TO-251AA package. IRFU220NPBF provides higher continuous drain current (5A versus 2.6A), lower on-resistance (600 mOhm versus 1.5 Ohm), and greater power dissipation (43W Tc versus 25W Tc). IRFU220NPBF has higher gate charge (23 nC versus 8.2 nC) and input capacitance (300 pF versus 140 pF), which may affect gate drive requirements and switching speed.

Q: Is IRFU220NPBF suitable for applications requiring the exact current rating of IRFU210?

A: IRFU220NPBF exceeds the current requirements of IRFU210 (5A versus 2.6A). In current-limited applications, IRFU220NPBF operates within safe margins. However, the higher gate charge and input capacitance may require gate driver adjustment. Verify gate drive circuit compatibility before substitution.

Q: What is the impact of higher gate charge in IRFU220NPBF?

A: Gate charge (Qg) of 23 nC in IRFU220NPBF versus 8.2 nC in IRFU210 affects switching speed and gate driver power dissipation. Higher gate charge requires longer switching times or higher gate drive current. In applications with fixed gate drive characteristics, this may reduce switching frequency capability or increase driver power consumption.

Q: Are all three parts available in the same package?

A: Yes. IRFU210, IRFU210PBF, and IRFU220NPBF are all supplied in TO-251-3 Short Leads, IPak, TO-251AA Through Hole package. Physical footprint and pin configuration are identical, enabling direct PCB compatibility.

Q: What is the significance of RoHS compliance status?

A: IRFU210 is RoHS non-compliant, while IRFU210PBF and IRFU220NPBF are ROHS3 compliant. For applications subject to RoHS regulations or customer requirements, IRFU210PBF or IRFU220NPBF must be selected. IRFU210 remains available for legacy systems without RoHS mandates.

Q: Can IRFU210 be used in new designs?

A: IRFU210 is classified as Obsolete. IRFU210PBF (Active status) is the recommended selection for new designs. IRFU220NPBF is classified as Not For New Designs and should be reserved for legacy system support only.

Q: How do operating temperature ranges compare?

A: IRFU210 and IRFU210PBF operate from -55°C to 150°C (TJ). IRFU220NPBF extends to -55°C to 175°C (TJ), providing 25°C additional high-temperature margin. For applications approaching 150°C, IRFU220NPBF offers enhanced thermal headroom.

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