IRFU1018EPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFU1018EPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage with 56A continuous drain current. This device is housed in a TO-251-3 (IPAK) through-hole package and is designed for high-current switching applications requiring moderate voltage ratings.

The IRFU1018EPBF carries an Obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for legacy systems utilizing this component.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	60	V
Current - Continuous Drain (Id) @ 25°C	56	A (Tc)
Rds On (Max) @ Id, Vgs	8.4	mOhm @ 47A, 10V
Power Dissipation (Max)	110	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-251-3 (IPAK)	Through Hole
Gate Charge (Qg) (Max) @ Vgs	69	nC @ 10V
Vgs(th) (Max) @ Id	4	V @ 100µA
Input Capacitance (Ciss) (Max) @ Vds	2290	pF @ 50V

Substitute Part Grouping Explanation

Substitution of the IRFU1018EPBF is determined by strict compatibility across the following electrical and mechanical parameters:

Primary Substitution Criteria:

FET Type: Must be N-Channel MOSFET
Package: Must be TO-251-3 (IPAK) through-hole configuration
Continuous Drain Current (Id): Must equal or exceed 56A @ 25°C
Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
Gate Drive Voltage: Must support 10V drive voltage
Operating Temperature Range: Must encompass -55°C to 175°C

Secondary Compatibility Parameters:

Rds On (Max): Lower or equal values indicate improved performance
Power Dissipation: Equal or higher ratings ensure thermal compatibility
Gate Charge (Qg): Similar or lower values maintain switching characteristics
Vgs(th) and Input Capacitance: Must remain within acceptable operating margins

The IRFU3607PBF meets all primary and secondary substitution criteria while maintaining electrical and mechanical compatibility with the IRFU1018EPBF.

Parameter Comparison

Parameter	IRFU1018EPBF	IRFU3607PBF	Unit
FET Type	N-Channel	N-Channel	—
Drain to Source Voltage (Vdss)	60	75	V
Current - Continuous Drain (Id) @ 25°C	56	56	A (Tc)
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	8.4 @ 47A, 10V	9 @ 46A, 10V	mOhm
Vgs(th) (Max) @ Id	4 @ 100µA	4 @ 100µA	V
Gate Charge (Qg) (Max) @ Vgs	69 @ 10V	84 @ 10V	nC
Vgs (Max)	±20	±20	V
Input Capacitance (Ciss) (Max) @ Vds	2290 @ 50V	3070 @ 50V	pF
Power Dissipation (Max)	110	140	W (Tc)
Operating Temperature Range	-55 to 175	-55 to 175	°C (TJ)
Package Type	TO-251-3 (IPAK)	TO-251-3 (IPAK)	Through Hole
Mounting Type	Through Hole	Through Hole	—
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

IRFU3607PBF as Primary Substitute:

The IRFU3607PBF is the manufacturer-recommended substitute for the obsolete IRFU1018EPBF. This device maintains identical N-Channel MOSFET topology, continuous drain current rating (56A), and TO-251-3 (IPAK) through-hole package configuration.

The IRFU3607PBF provides enhanced electrical performance through increased drain-to-source voltage rating (75V versus 60V) and higher power dissipation capability (140W versus 110W). These improvements ensure compatibility with the original design while offering superior voltage margin and thermal headroom.

Gate charge increases from 69 nC to 84 nC, and input capacitance increases from 2290 pF to 3070 pF. These parameter shifts remain within acceptable operating margins for standard gate drive circuits and do not introduce incompatibility with existing PCB layouts or driver topologies.

The IRFU3607PBF carries Active product status and ROHS3 compliance certification, ensuring long-term supply availability and regulatory alignment. The device maintains identical operating temperature range (-55°C to 175°C) and gate voltage specifications (±20V maximum).

Supply and Compliance Status:

The IRFU3607PBF is available in production quantities (2100 pieces in current inventory) with established supply chain support. Both devices carry REACH Unaffected status and EAR99 export classification, maintaining identical regulatory posture.

Frequently Asked Questions (FAQ)

Q: Can the IRFU3607PBF directly replace the IRFU1018EPBF in existing designs?

A: Yes. Both devices are N-Channel MOSFETs in TO-251-3 (IPAK) through-hole packages with identical 56A continuous drain current ratings and ±20V gate voltage specifications. Identical mounting footprints and pin configurations ensure direct PCB compatibility without layout modifications.

Q: What are the key electrical differences between these parts?

A: The IRFU3607PBF provides higher drain-to-source voltage (75V versus 60V), increased power dissipation (140W versus 110W), slightly higher on-resistance (9 mOhm versus 8.4 mOhm), and increased gate charge (84 nC versus 69 nC). These differences represent performance enhancements that maintain backward compatibility.

Q: Why does the IRFU3607PBF have higher gate charge?

A: Gate charge increases proportionally with die size and voltage rating. The higher voltage rating (75V) and power dissipation capability (140W) require larger semiconductor geometry, resulting in increased parasitic capacitance. This does not affect compatibility with standard gate drive circuits rated for 10V drive voltage.

Q: Are there any thermal considerations when substituting these parts?

A: The IRFU3607PBF has higher power dissipation capability (140W versus 110W), which provides additional thermal margin. Existing thermal management solutions designed for the IRFU1018EPBF will perform equivalently or better with the IRFU3607PBF. No thermal redesign is required.

Q: What is the impact of increased input capacitance on circuit performance?

A: Input capacitance increases from 2290 pF to 3070 pF. This represents approximately 34% increase and may slightly increase gate drive current requirements. Standard gate drivers rated for 10V operation accommodate this capacitance range without performance degradation.

Q: Is the IRFU3607PBF suitable for applications requiring 60V maximum voltage?

A: Yes. The IRFU3607PBF is rated for 75V drain-to-source voltage, which exceeds the 60V requirement. The higher voltage rating provides design margin and does not introduce incompatibility with 60V-rated circuit topologies.

Q: What is the product status difference, and why does it matter?

A: The IRFU1018EPBF is Obsolete, indicating discontinued production and limited supply availability. The IRFU3607PBF is Active, ensuring ongoing manufacturing, established supply chains, and long-term availability. Active status is critical for production continuity and future design support.

Q: Are there any compliance or certification differences?

A: The IRFU3607PBF carries ROHS3 compliance certification, while the IRFU1018EPBF does not specify this status. Both devices maintain REACH Unaffected classification and EAR99 export designation. The ROHS3 compliance of the substitute enhances regulatory alignment with current environmental standards.

Q: Can I use the IRFU3607PBF in high-frequency switching applications?

A: Yes. The IRFU3607PBF maintains identical gate voltage specifications and threshold voltage (4V @ 100µA) as the IRFU1018EPBF. Increased gate charge (84 nC versus 69 nC) may require proportionally higher gate drive current, but does not prevent high-frequency operation with appropriately rated drivers.

Q: What packaging options are available for the IRFU3607PBF?

A: The IRFU3607PBF is supplied in Tube packaging for the through-hole TO-251-3 (IPAK) configuration. This matches the through-hole mounting requirement of the original IRFU1018EPBF and maintains compatibility with existing assembly processes.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message