IRFSL7787PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFSL7787PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage with 76A continuous drain current at 25°C. This device is packaged in TO-262-3 (I2PAK) configuration and is designed for through-hole mounting applications requiring moderate voltage and high current switching capability. The part is classified as obsolete, making identification of suitable substitute components essential for ongoing design support and production continuity.

Substiute Parts

IRFSL7787PBF

Infineon TechnologiesIn Stock: 22871IRFSL7787PBF Datasheet

Current PartRFQ

IPI086N10N3GXKSA1

Infineon TechnologiesIn Stock: 1156IPI086N10N3GXKSA1 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFSL7787PBF is determined by the following critical parameters:

Voltage Rating Compatibility: The substitute part must have a Vdss rating equal to or greater than 75V. This ensures the device can withstand the maximum drain-to-source voltage in the application circuit.

Current Capability: The substitute must support continuous drain current (Id) at or above 76A at 25°C to maintain equivalent or superior current handling capacity.

On-State Resistance (Rds On): The substitute's maximum on-state resistance must be comparable or lower to ensure similar conduction losses and thermal performance.

Gate Charge (Qg): Lower gate charge values indicate faster switching characteristics and reduced gate drive power requirements.

Package and Mounting: The substitute must use the same TO-262-3 through-hole package to ensure mechanical and electrical compatibility with existing PCB layouts.

Thermal Characteristics: Maximum power dissipation and operating temperature range must meet or exceed the original specification.

Compliance Status: The substitute must maintain equivalent RoHS3 compliance and REACH status.

Parameter Comparison

Engineering Selection Recommendations

The IPI086N10N3GXKSA1 is a direct substitute for the obsolete IRFSL7787PBF based on the following engineering criteria:

Voltage and Current Ratings: The IPI086N10N3GXKSA1 exceeds the original specifications with a 100V Vdss rating (versus 75V) and 80A continuous drain current (versus 76A). These higher ratings provide design margin and ensure the substitute can handle all operating conditions of the original circuit.

On-State Performance: The on-state resistance of 8.6 mOhm at 73A and 10V is comparable to the original 8.4 mOhm at 46A and 10V, indicating equivalent conduction loss characteristics.

Switching Characteristics: The substitute features significantly lower gate charge (55 nC versus 109 nC), resulting in faster switching transitions and reduced gate drive power consumption. This represents an improvement over the original design.

Thermal Management: Both devices are rated for identical maximum power dissipation (125W) and operating temperature range (-55°C to 175°C), ensuring equivalent thermal performance in the application.

Compliance and Availability: The IPI086N10N3GXKSA1 maintains ROHS3 compliance and REACH unaffected status, matching the original part. Critically, this substitute is in active production with 1142 units in stock, providing immediate availability compared to the obsolete IRFSL7787PBF.

Package Compatibility: Both devices use TO-262-3 through-hole packaging, ensuring direct mechanical and electrical compatibility with existing PCB designs without layout modifications.

Frequently Asked Questions (FAQ)

Q: Can the IPI086N10N3GXKSA1 be used as a direct replacement for the IRFSL7787PBF without circuit modifications?

A: Yes. The substitute meets or exceeds all critical electrical parameters (voltage rating, current capacity, on-state resistance, and thermal dissipation) and uses identical through-hole packaging. No circuit modifications are required for electrical or mechanical compatibility.

Q: What is the significance of the higher Vdss rating (100V) on the substitute?

A: The higher voltage rating provides additional design margin and ensures the device can withstand transient overvoltage conditions that may occur in the application. This is a beneficial characteristic for reliability and does not negatively impact circuit operation.

Q: Why is the gate charge (Qg) significantly lower on the substitute?

A: The IPI086N10N3GXKSA1 features advanced OptiMOS™ technology, which reduces gate charge to 55 nC compared to the original 109 nC. This results in faster switching transitions, lower gate drive power consumption, and improved overall circuit efficiency. This represents a performance improvement over the original design.

Q: Are there any thermal or reliability concerns when substituting this part?

A: No. Both devices are rated for identical maximum power dissipation (125W) and operating temperature range (-55°C to 175°C). The substitute's improved switching characteristics (lower gate charge) may actually reduce thermal stress in gate drive circuits.

Q: Does the substitute maintain the same compliance certifications?

A: Yes. The IPI086N10N3GXKSA1 is ROHS3 compliant and REACH unaffected, matching the original IRFSL7787PBF. Both devices meet the same regulatory requirements.

Q: What is the availability status of the substitute compared to the original part?

A: The IRFSL7787PBF is obsolete and no longer manufactured. The IPI086N10N3GXKSA1 is in active production with 1142 units currently in stock, ensuring reliable supply for new designs and production continuity.

Q: Are there any differences in the on-state resistance that would affect circuit performance?

A: The on-state resistance values are comparable (8.4 mOhm versus 8.6 mOhm), with the difference attributable to different measurement conditions (46A versus 73A). Both values are within acceptable engineering tolerance and will produce equivalent conduction losses in typical applications.

Q: Can the substitute handle the same gate voltage range as the original?

A: Yes. Both devices support identical maximum gate voltage (±20V) and have comparable gate threshold voltages (3.7V versus 3.5V), ensuring compatible gate drive circuits and control logic.