IRFSL7534PBF N-Channel 60V 195A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFSL7534PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage and 195A continuous drain current in a Surface Mount TO-262 package. This device is classified as Obsolete product status. Due to its obsolete classification, equivalent and substitute parts from active product lines are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	195	A
Rds On (Max) @ 100A, 10V	2.4	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3.7	V
Gate Charge (Qg) @ 10V	279	nC
Power Dissipation (Max)	294	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-262	-
Mounting Type	Surface Mount	-

Substitute Part Grouping Explanation

Substitution of the IRFSL7534PBF is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 60V
Rds On characteristics: Must support equivalent on-resistance performance at specified gate voltage and current levels
Gate threshold voltage (Vgs(th)): Must fall within compatible operating range
Operating temperature range: Must span -55°C to 175°C minimum
FET technology: N-Channel MOSFET (Metal Oxide)

Mechanical Compatibility Criteria:

Package family: TO-262 series (includes TO-262-3 Long Leads, I2PAK, TO-262AA variants)
Mounting compatibility: Surface Mount or Through Hole variants within TO-262 family

The substitute parts listed below meet the voltage and technology requirements. However, the continuous drain current (Id) of substitute parts is rated at 120A, which is lower than the original 195A specification. This represents a derating in current capacity and requires circuit-level evaluation for application suitability.

Parameter Comparison

Parameter	IRFSL7534PBF	IPI024N06N3GXKSA1	PSMN2R0-60ES,127	Unit
Manufacturer	Infineon Technologies	Infineon Technologies	NXP Semiconductors	-
FET Type	N-Channel	N-Channel	N-Channel	-
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	-
Drain to Source Voltage (Vdss)	60	60	60	V
Continuous Drain Current (Id) @ 25°C	195	120	120	A
Rds On (Max) @ 10V	2.4 @ 100A	2.4 @ 100A	2.2 @ 25A	mOhm
Gate Threshold Voltage (Vgs(th))	3.7 @ 250µA	4.0 @ 196µA	4.0 @ 1mA	V
Gate Charge (Qg) @ 10V	279	275	137	nC
Vgs (Max)	±20	±20	±20	V
Power Dissipation (Max)	294	250	338	W
Operating Temperature Range	-55 to 175	-55 to 175	-55 to 175	°C
Package / Case	TO-262-3 Long Leads, I2PAK, TO-262AA	TO-262-3 Long Leads, I2PAK, TO-262AA	TO-262-3 Long Leads, I2PAK, TO-262AA	-
Mounting Type	Surface Mount	Through Hole	Through Hole	-
Product Status	Obsolete	Active	Active	-
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Not specified	-
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	-

Engineering Selection Recommendations

IPI024N06N3GXKSA1 (Infineon Technologies OptiMOS™ Series)

This substitute is an Active product from Infineon Technologies, the same manufacturer as the original IRFSL7534PBF. It maintains ROHS3 compliance and REACH Unaffected status, ensuring regulatory alignment. The device shares identical voltage rating (60V) and equivalent on-resistance characteristics (2.4 mOhm @ 100A, 10V). Gate charge is nearly identical (275 nC vs. 279 nC), indicating similar switching performance. The primary difference is the reduced continuous drain current rating of 120A versus the original 195A, and the Through Hole mounting configuration versus Surface Mount. This part is suitable for applications where the 120A current rating is sufficient.

PSMN2R0-60ES,127 (NXP Semiconductors)

This substitute is an Active product from NXP Semiconductors with identical voltage rating (60V) and continuous drain current rating (120A). It offers superior power dissipation capability (338W vs. 294W) and lower gate charge (137 nC), which may provide improved switching efficiency. The on-resistance at 10V is 2.2 mOhm @ 25A, which is lower than the original specification point but measured at a different current level. REACH Unaffected status is confirmed. RoHS compliance status is not specified in the provided data. The Through Hole I2PAK package configuration differs from the original Surface Mount type.

Both substitute parts are Active products with confirmed regulatory compliance, addressing the obsolescence of the original IRFSL7534PBF. Selection between them depends on application-specific requirements regarding current capacity, power dissipation, and mounting configuration compatibility.

Frequently Asked Questions (FAQ)

Q: Can the IPI024N06N3GXKSA1 directly replace the IRFSL7534PBF in existing designs?

A: Electrical substitution is possible for applications where 120A continuous drain current is sufficient. The voltage rating, on-resistance, and operating temperature range are compatible. However, the mounting type differs (Through Hole vs. Surface Mount), requiring PCB layout modification. Gate charge characteristics are nearly identical, supporting equivalent switching performance.

Q: What is the primary limitation of using substitute parts for the IRFSL7534PBF?

A: Both substitute parts are rated for 120A continuous drain current, compared to the original 195A rating. This represents a 38% reduction in current capacity. Applications requiring the full 195A capability cannot use these substitutes without circuit redesign or parallel device configuration.

Q: Are the substitute parts suitable for high-temperature applications?

A: Yes. Both IPI024N06N3GXKSA1 and PSMN2R0-60ES,127 maintain the same operating temperature range (-55°C to 175°C) as the original IRFSL7534PBF, ensuring thermal compatibility across the full operating envelope.

Q: How do the gate charge characteristics compare between the original and substitute parts?

A: The IPI024N06N3GXKSA1 has gate charge of 275 nC @ 10V, nearly identical to the original 279 nC. The PSMN2R0-60ES,127 has significantly lower gate charge at 137 nC @ 10V, which may reduce switching losses in high-frequency applications.

Q: What are the package compatibility considerations?

A: The original IRFSL7534PBF uses Surface Mount TO-262 packaging. Both substitutes use Through Hole variants within the TO-262 family (PG-TO262-3-1 and I2PAK respectively). PCB footprint and assembly process modifications are required for substitution.

Q: Are regulatory compliance requirements met by the substitute parts?

A: The IPI024N06N3GXKSA1 maintains ROHS3 compliance and REACH Unaffected status identical to the original. The PSMN2R0-60ES,127 confirms REACH Unaffected status; RoHS compliance is not specified in the provided data and must be verified with the manufacturer for applications requiring RoHS certification.

Q: Which substitute part offers better power dissipation performance?

A: The PSMN2R0-60ES,127 is rated for 338W maximum power dissipation, compared to 294W for the original and 250W for the IPI024N06N3GXKSA1. This higher rating provides greater thermal headroom in power-intensive applications.

Q: Can both substitute parts be used interchangeably in the same application?

A: Both parts meet the 60V voltage requirement and 120A current rating. However, they differ in gate charge (275 nC vs. 137 nC), on-resistance measurement points, and power dissipation ratings. Selection should be based on specific circuit requirements for switching speed, thermal management, and current distribution.

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