IRFSL7530PBF N-Channel MOSFET 60V 195A Equivalent & Substitute Parts

Part Overview

The IRFSL7530PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage with 195A continuous drain current at 25°C. This device is packaged in TO-262 surface mount configuration and is classified as obsolete. Due to its obsolete product status, equivalent and substitute parts from active product lines are necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility within the specified voltage and current ratings while accommodating potential differences in packaging and thermal characteristics.

Substiute Parts

IRFSL7530PBF

Infineon TechnologiesIn Stock: 1046IRFSL7530PBF Datasheet

Current PartRFQ

IPI024N06N3GXKSA1

Infineon TechnologiesIn Stock: 2156IPI024N06N3GXKSA1 Datasheet

MFR RecommendedRFQ

PSMN2R0-60ES,127

NXP SemiconductorsIn Stock: 2080PSMN2R0-60ES,127 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFSL7530PBF is determined by the following critical electrical parameters: Drain-to-Source Voltage (Vdss) rating of 60V, N-Channel configuration, and compatible on-state resistance characteristics. The substitute parts listed maintain the 60V Vdss rating and N-Channel MOSFET technology. However, substitute parts operate at reduced continuous drain current ratings (120A versus 195A) and lower maximum power dissipation (250W to 338W versus 375W). These reductions require thermal and circuit design evaluation for applications originally specified for the full 195A rating.

The substitute parts are selected from active product lines, ensuring long-term availability and compliance with current RoHS3 standards. Packaging differences exist between the main part (surface mount TO-262) and substitute parts (through-hole configurations), which necessitate PCB layout modifications.

Parameter Comparison

Engineering Selection Recommendations

IPI024N06N3GXKSA1 (Infineon Technologies OptiMOS™ Series)

This substitute part is manufactured by the same supplier as the main part, ensuring design continuity within the Infineon product ecosystem. The IPI024N06N3GXKSA1 maintains the 60V Vdss rating and N-Channel configuration. It is classified as an active product with ROHS3 compliance and MSL Level 1 rating, supporting long-term supply chain stability. The continuous drain current is reduced to 120A, and maximum power dissipation is 250W. This part is suitable for applications where the original 195A rating is not fully utilized or where thermal management can accommodate the lower power rating. Through-hole mounting requires PCB redesign from the surface mount original.

PSMN2R0-60ES,127 (NXP Semiconductors)

This NXP substitute maintains the 60V Vdss rating and N-Channel MOSFET technology. The PSMN2R0-60ES,127 is an active product with REACH compliance. Continuous drain current is 120A with maximum power dissipation of 338W, providing higher thermal capacity than the IPI024N06N3GXKSA1. On-state resistance is 2.2 mOhm at 25A and 10V. Gate charge is significantly lower at 137 nC, which may reduce switching losses in high-frequency applications. Moisture sensitivity level is vendor undefined. Through-hole I2PAK packaging requires PCB layout modification from the surface mount original.

Both substitute parts are active products with established supply availability. Selection between them depends on specific application requirements for current capacity, power dissipation, gate charge characteristics, and PCB layout constraints.

Frequently Asked Questions (FAQ)

Q: Can the IPI024N06N3GXKSA1 or PSMN2R0-60ES,127 directly replace the IRFSL7530PBF without circuit modifications?

A: Electrical substitution is possible within the 60V Vdss and N-Channel specifications. However, the reduced continuous drain current (120A versus 195A) and lower power dissipation ratings require thermal analysis of the original application. PCB layout modification is mandatory due to packaging differences (surface mount to through-hole conversion).

Q: What are the key differences between the two substitute parts?

A: Both maintain 60V Vdss and 120A continuous drain current. The PSMN2R0-60ES,127 offers higher power dissipation (338W versus 250W) and significantly lower gate charge (137 nC versus 275 nC). The IPI024N06N3GXKSA1 is from Infineon, matching the original manufacturer. Selection depends on thermal requirements and switching frequency considerations.

Q: Are there packaging compatibility issues?

A: Yes. The IRFSL7530PBF is surface mount TO-262. Both substitutes are through-hole devices (PG-TO262-3-1 and I2PAK respectively). PCB redesign is required for mounting and thermal management.

Q: What is the impact of reduced continuous drain current on circuit design?

A: Applications operating at or near 195A continuous current require re-evaluation. Thermal management, current distribution, and circuit protection must be reassessed for the 120A rating. Parallel device configurations may be necessary for high-current applications.

Q: Are compliance certifications maintained with substitute parts?

A: Both substitutes are ROHS3 compliant and REACH unaffected. The IPI024N06N3GXKSA1 has defined MSL Level 1. The PSMN2R0-60ES,127 has vendor-undefined MSL. Compliance verification with specific supply chain documentation is recommended.

Q: How do gate charge differences affect circuit performance?

A: The PSMN2R0-60ES,127 has lower gate charge (137 nC versus 411 nC in the original), reducing gate drive power requirements and potentially improving switching speed. The IPI024N06N3GXKSA1 has intermediate gate charge (275 nC), offering a balance between the original and NXP specifications.