IRFSL4610PBF N-Channel MOSFET 100V 73A Equivalent & Substitute Parts

Part Overview

The IRFSL4610PBF is an N-Channel MOSFET manufactured by Infineon Technologies, designed for high-current switching applications with a 100V drain-to-source voltage rating and 73A continuous drain current capability. This device features the HEXFET® series technology and is housed in a TO-262 through-hole package.

The IRFSL4610PBF is classified as an obsolete product. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support legacy system maintenance and repairs.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Current - Continuous Drain (Id) @ 25°C	73	A
Rds On (Max) @ Id, Vgs	14	mOhm @ 44A, 10V
Gate Charge (Qg) (Max) @ Vgs	140	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3550	pF @ 50V
Power Dissipation (Max)	190	W
Operating Temperature Range	-55 to 175	°C
Mounting Type	Through Hole	-
Package / Case	TO-262-3	-
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the IRFSL4610PBF is determined by strict electrical and mechanical parameter compatibility within the N-Channel MOSFET category. The following parameters establish the substitution criteria:

Electrical Parameters (Critical):

Drain to Source Voltage (Vdss): Must equal or exceed 100V
Current - Continuous Drain (Id): Must equal or exceed 73A at 25°C
Gate-Source Voltage (Vgs): Must support ±20V maximum rating
Operating Temperature Range: Must encompass -55°C to 175°C

Mechanical Parameters (Critical):

Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, or TO-262AA compatible

Performance Parameters (Compatibility Indicators):

Rds On (Max): Lower values indicate improved performance
Gate Charge (Qg): Lower values indicate faster switching
Input Capacitance (Ciss): Affects gate drive requirements

The substitute part IPI086N10N3GXKSA1 meets all critical electrical and mechanical parameters while offering improved performance characteristics in gate charge and on-resistance specifications.

Parameter Comparison

Parameter	IRFSL4610PBF	IPI086N10N3GXKSA1	Unit
Manufacturer	Infineon Technologies	Infineon Technologies	-
FET Type	N-Channel	N-Channel	-
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	-
Drain to Source Voltage (Vdss)	100	100	V
Current - Continuous Drain (Id) @ 25°C	73	80	A
Rds On (Max) @ Id, Vgs	14 @ 44A, 10V	8.6 @ 73A, 10V	mOhm
Gate Charge (Qg) (Max) @ Vgs	140 @ 10V	55 @ 10V	nC
Vgs(th) (Max) @ Id	4 @ 100µA	3.5 @ 75µA	V
Input Capacitance (Ciss) (Max) @ Vds	3550 @ 50V	3980 @ 50V	pF
Power Dissipation (Max)	190	125	W
Operating Temperature Range	-55 to 175	-55 to 175	°C
Vgs (Max)	±20	±20	V
Mounting Type	Through Hole	Through Hole	-
Package / Case	TO-262-3	TO-262-3	-
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	-
REACH Status	REACH Unaffected	REACH Unaffected	-
ECCN	EAR99	EAR99	-

Engineering Selection Recommendations

The IPI086N10N3GXKSA1 is the manufacturer-recommended substitute for the obsolete IRFSL4610PBF. Both devices are manufactured by Infineon Technologies and share identical electrical ratings for Vdss, Vgs maximum, and operating temperature range.

The IPI086N10N3GXKSA1 is classified as an active product with ROHS3 compliance, ensuring continued availability and regulatory alignment. The substitute part exceeds the minimum current requirement (80A versus 73A) and demonstrates superior on-resistance performance (8.6 mOhm versus 14 mOhm at comparable conditions).

Both parts are housed in TO-262-3 through-hole packages with identical pinout and mechanical compatibility. Moisture sensitivity levels and export classifications are equivalent.

The substitute part is suitable for direct replacement in applications requiring the IRFSL4610PBF electrical and mechanical specifications.

Frequently Asked Questions (FAQ)

Q: Can the IPI086N10N3GXKSA1 directly replace the IRFSL4610PBF in existing designs?

A: Yes. Both devices share identical Vdss (100V), Vgs maximum (±20V), operating temperature range (-55°C to 175°C), and TO-262-3 package configuration. The substitute part meets or exceeds all critical electrical parameters of the original part.

Q: What are the key differences between these two parts?

A: The IPI086N10N3GXKSA1 offers improved performance with lower gate charge (55 nC versus 140 nC) and lower on-resistance (8.6 mOhm versus 14 mOhm). The substitute part has higher continuous drain current rating (80A versus 73A). The IRFSL4610PBF is obsolete; the IPI086N10N3GXKSA1 is an active product.

Q: Are the packages mechanically identical?

A: Yes. Both parts use the TO-262-3 Long Leads package with identical pinout and mechanical dimensions, enabling direct board-level substitution without layout modifications.

Q: What is the product status difference?

A: The IRFSL4610PBF is classified as obsolete, while the IPI086N10N3GXKSA1 is an active product. Active status ensures continued manufacturing, availability, and technical support.

Q: Are there compliance or regulatory differences?

A: No. Both parts share identical REACH status (REACH Unaffected), ECCN classification (EAR99), and moisture sensitivity level (MSL 1 - Unlimited). The substitute part adds ROHS3 compliance certification.

Q: What is the gate charge significance in substitution?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. The substitute part's lower gate charge (55 nC versus 140 nC) indicates faster switching capability and reduced gate drive power requirements, representing an improvement over the original part.

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