IRFSL4410ZPBF N-Channel MOSFET 100V 97A Equivalent & Substitute Parts

Part Overview

The IRFSL4410ZPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage and 97A continuous drain current at 25°C. This device is packaged in TO-262-3 (I2PAK) configuration with through-hole mounting. The part is classified as obsolete, making identification of functionally equivalent active alternatives necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the through-hole TO-262-3 package standard.

Substiute Parts

IRFSL4410ZPBF

Infineon TechnologiesIn Stock: 2276IRFSL4410ZPBF Datasheet

Current PartRFQ

IPI076N12N3GAKSA1

Infineon TechnologiesIn Stock: 1337IPI076N12N3GAKSA1 Datasheet

MFR RecommendedRFQ

IPI086N10N3GXKSA1

Infineon TechnologiesIn Stock: 1156IPI086N10N3GXKSA1 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRFSL4410ZPBF is determined by the following criteria:

Primary Compatibility Requirements:

• Drain-to-Source Voltage (Vdss) must equal or exceed 100V
• Continuous Drain Current (Id) must equal or exceed 97A at 25°C
• On-State Resistance (Rds On) must support equivalent or superior switching performance
• Gate Threshold Voltage (Vgs(th)) must remain within ±20V maximum gate voltage specification
• Package must be TO-262-3 through-hole configuration
• Operating temperature range must encompass -55°C to 175°C
• RoHS3 compliance and REACH unaffected status required

Identified Substitute Parts:

The two substitute parts listed—IPI076N12N3GAKSA1 and IPI086N10N3GXKSA1—are both manufactured by Infineon Technologies and classified as active products. Both are packaged in PG-TO262-3 (TO-262-3 equivalent) through-hole configuration. Both maintain full RoHS3 compliance and REACH unaffected status, ensuring regulatory continuity.

Parameter Comparison

Engineering Selection Recommendations

IPI076N12N3GAKSA1 Selection Criteria:

This substitute provides the highest voltage rating (120V Vdss) and current capacity (100A Id), exceeding the IRFSL4410ZPBF specifications. The lower on-state resistance (7.6 mOhm at 100A, 10V) delivers improved switching efficiency. Gate charge is reduced to 101 nC, enabling faster switching transitions. This part is classified as active product status with full RoHS3 compliance and REACH unaffected designation. Power dissipation rating of 188W is lower than the original, requiring thermal design verification in high-power applications.

IPI086N10N3GXKSA1 Selection Criteria:

This substitute maintains the 100V Vdss rating matching the original specification. Continuous drain current is rated at 80A, which is below the 97A requirement of the IRFSL4410ZPBF. On-state resistance is 8.6 mOhm at 73A, 10V. Gate charge is significantly reduced to 55 nC, supporting faster switching operation. This part is classified as active product status with full RoHS3 compliance and REACH unaffected designation. Power dissipation rating of 125W is substantially lower than the original, limiting application to designs with reduced thermal loads.

Regulatory Compliance:

Both substitute parts maintain ROHS3 compliance and REACH unaffected status, ensuring continuity with environmental and regulatory requirements applicable to the original IRFSL4410ZPBF.

Frequently Asked Questions (FAQ)

Q: Can IPI086N10N3GXKSA1 directly replace IRFSL4410ZPBF in all applications?

A: No. The IPI086N10N3GXKSA1 is rated for 80A continuous drain current, which is below the 97A specification of the IRFSL4410ZPBF. Applications requiring the full 97A current capacity must use IPI076N12N3GAKSA1 or verify that actual operating current does not exceed 80A.

Q: What is the difference between TO-262-3 and PG-TO262-3 packaging?

A: Both designations refer to the same physical package standard: TO-262-3 with three leads in through-hole configuration (I2PAK format). The "PG" prefix in PG-TO262-3 indicates the supplier device package designation. Pin compatibility and PCB footprint are identical.

Q: Are the substitute parts pin-compatible with IRFSL4410ZPBF?

A: Yes. Both IPI076N12N3GAKSA1 and IPI086N10N3GXKSA1 use the same TO-262-3 through-hole package with identical pin configuration: Gate, Drain, and Source leads in the same physical arrangement.

Q: Why is the power dissipation lower in the substitute parts?

A: Power dissipation is a function of die size and thermal design. The substitute parts, particularly IPI086N10N3GXKSA1, feature optimized die geometry for lower on-state resistance and faster switching, resulting in different thermal characteristics. Applications must verify thermal performance through thermal modeling or testing.

Q: Which substitute part should be selected for new designs?

A: Selection depends on application current requirements. For applications requiring 97A or higher continuous current, use IPI076N12N3GAKSA1. For applications with maximum current below 80A, IPI086N10N3GXKSA1 offers superior switching performance with lower gate charge. Both parts are active products with full regulatory compliance.

Q: Are there any gate drive voltage differences between the main part and substitutes?

A: All three parts support ±20V maximum gate voltage. Gate threshold voltages are similar: IRFSL4410ZPBF at 4V, IPI076N12N3GAKSA1 at 4V, and IPI086N10N3GXKSA1 at 3.5V. Gate drive circuits designed for the original part are compatible with both substitutes.

Q: What is the inventory status of these substitute parts?

A: IPI076N12N3GAKSA1 has 1239 pieces in stock. IPI086N10N3GXKSA1 has 1142 pieces in stock. Both are available as new original components in tube packaging.