IRFSL4410 Equivalent & Substitute Parts

Part Overview

The IRFSL4410 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 96A continuous drain current at 25°C. This device is housed in a TO-262 package and is designed for through-hole mounting applications requiring high current switching capability. The IRFSL4410 is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support and procurement.

Substiute Parts

IRFSL4410
Infineon TechnologiesIn Stock: 1811IRFSL4410 Datasheet
IRFSL4410
Current Part
IPI086N10N3GXKSA1
Infineon TechnologiesIn Stock: 1156IPI086N10N3GXKSA1 Datasheet
IPI086N10N3GXKSA1
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 96 A
Power Dissipation (Max) 250 W
Rds On (Max) @ 58A, 10V 10 mOhm
Gate Charge (Qg) @ 10V 180 nC
Operating Temperature Range -55 to 175 °C
Package Type TO-262-3
Mounting Type Through Hole

Substitute Part Grouping Explanation

Substitution of the IRFSL4410 is based on the following electrical and mechanical parameters:

Voltage Rating: Both the main part and substitute must maintain a Drain-to-Source Voltage (Vdss) of 100V to ensure compatibility in the same circuit topology.

Current Capability: The substitute must support continuous drain current sufficient for the application. The IRFSL4410 specifies 96A; substitutes with lower current ratings require application-level verification of thermal and electrical margins.

Package and Mounting: The TO-262-3 package with through-hole mounting is a critical mechanical constraint. Substitutes must use identical or compatible package designations to ensure PCB footprint compatibility.

Operating Temperature Range: Both parts operate across -55°C to 175°C, ensuring thermal compatibility in the same operating environment.

RoHS and Compliance Status: The IRFSL4410 is RoHS non-compliant. The substitute IPI086N10N3GXKSA1 is ROHS3 compliant, which may be required for new designs or specific regulatory environments.

Parameter Comparison

Parameter IRFSL4410 IPI086N10N3GXKSA1 Unit
Manufacturer Infineon Technologies Infineon Technologies
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 100 V
Continuous Drain Current (Id) @ 25°C 96 80 A
Rds On (Max) @ 10V 10 @ 58A 8.6 @ 73A mOhm
Gate Charge (Qg) @ 10V 180 55 nC
Power Dissipation (Max) 250 125 W
Operating Temperature Range -55 to 175 -55 to 175 °C
Package / Case TO-262-3 TO-262-3
Mounting Type Through Hole Through Hole
Product Status Obsolete Active
RoHS Status Non-compliant ROHS3 Compliant

Engineering Selection Recommendations

For Active Production and New Designs:

The IPI086N10N3GXKSA1 is the recommended substitute for the obsolete IRFSL4410. Both devices share identical voltage ratings (100V Vdss) and compatible TO-262-3 through-hole packages. The IPI086N10N3GXKSA1 is classified as Active product status, ensuring long-term availability and supply chain stability.

Compliance Considerations:

The IPI086N10N3GXKSA1 carries ROHS3 compliance certification, whereas the IRFSL4410 is RoHS non-compliant. For applications subject to RoHS regulations or customer requirements, the IPI086N10N3GXKSA1 satisfies regulatory mandates.

Current Rating Differential:

The IPI086N10N3GXKSA1 specifies 80A continuous drain current compared to the IRFSL4410's 96A. Applications operating at or near the 96A limit require thermal analysis to confirm the substitute's adequacy. The lower power dissipation rating (125W vs. 250W) reflects this current differential.

Gate Charge and Switching Performance:

The IPI086N10N3GXKSA1 exhibits significantly lower gate charge (55 nC vs. 180 nC), resulting in faster switching transitions and reduced driver power requirements. This characteristic may improve overall circuit efficiency.

Frequently Asked Questions (FAQ)

Q: Can the IPI086N10N3GXKSA1 directly replace the IRFSL4410 in existing PCB designs?

A: Yes, both devices use the TO-262-3 package with identical through-hole pin configuration. PCB footprints are mechanically compatible without modification.

Q: What is the significance of the 16A current rating difference between these parts?

A: The IRFSL4410 is rated for 96A while the IPI086N10N3GXKSA1 is rated for 80A. Applications operating below 80A continuous current experience no functional limitation. Applications requiring sustained current above 80A require thermal and electrical margin analysis to confirm the substitute's suitability.

Q: Does the lower gate charge of the IPI086N10N3GXKSA1 affect gate driver compatibility?

A: Lower gate charge (55 nC vs. 180 nC) reduces driver power dissipation and may improve switching speed. Existing gate driver circuits designed for the IRFSL4410 remain compatible with the IPI086N10N3GXKSA1 without modification.

Q: Why is the IRFSL4410 classified as obsolete?

A: The IRFSL4410 belongs to the HEXFET® series, an earlier generation of Infineon MOSFET technology. The IPI086N10N3GXKSA1 from the OptiMOS™ series represents current-generation technology with improved performance characteristics and active manufacturing status.

Q: Are there compliance or certification differences between these parts?

A: The IRFSL4410 is RoHS non-compliant. The IPI086N10N3GXKSA1 is ROHS3 compliant. Both parts carry identical REACH Unaffected and EAR99 ECCN classifications. For applications requiring RoHS compliance, the IPI086N10N3GXKSA1 is the appropriate selection.

Q: What packaging options are available for the IPI086N10N3GXKSA1?

A: The IPI086N10N3GXKSA1 is supplied in Tube packaging. The IRFSL4410 packaging specification was not provided in the source data.

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