IRFSL4310ZPBF N-Channel MOSFET 100V 120A Equivalent & Substitute Parts

Part Overview

The IRFSL4310ZPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 120A continuous drain current at 25°C. This device is housed in a TO-262 through-hole package and is designed for high-current switching applications requiring robust thermal performance up to 250W at the case temperature.

The IRFSL4310ZPBF is classified as an Obsolete product. Locating equivalent or substitute components is necessary to support ongoing maintenance, repair, and production requirements for legacy systems utilizing this HEXFET® series device.

Substiute Parts

IRFSL4310ZPBF
Infineon TechnologiesIn Stock: 2562IRFSL4310ZPBF Datasheet
IRFSL4310ZPBF
Current Part
AOW482
Alpha & Omega Semiconductor Inc.In Stock: 2405AOW482 Datasheet
AOW482
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 120 A (Tc)
On-State Resistance (Rds On) @ 75A, 10V 6 mOhm
Gate Threshold Voltage (Vgs(th)) @ 150µA 4 V
Gate Charge (Qg) @ 10V 170 nC
Power Dissipation (Max) 250 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-262-3 Through Hole

Substitute Part Grouping Explanation

Substitution of the IRFSL4310ZPBF is evaluated based on the following critical electrical and mechanical parameters:

Voltage Rating (Vdss): The substitute must support the same or higher drain-to-source voltage to ensure safe operation in the original circuit topology.

Current Rating (Id): The substitute must deliver equal or greater continuous drain current at 25°C to maintain circuit performance and thermal margins.

On-State Resistance (Rds On): Lower or equivalent on-state resistance ensures comparable power dissipation and thermal behavior.

Package Compatibility: The substitute must use the same TO-262 through-hole package to ensure mechanical and thermal interface compatibility with existing PCB layouts and heatsinking arrangements.

Operating Temperature Range: The substitute must support the full operating temperature range of the original application.

Compliance & Status: Active product status with current manufacturing support is preferred for long-term availability.

The AOW482 from Alpha & Omega Semiconductor Inc. is identified as a manufacturer-recommended substitute. However, this device operates at a lower voltage rating (80V vs. 100V), which represents a functional limitation in voltage headroom compared to the original IRFSL4310ZPBF.

Parameter Comparison

Parameter IRFSL4310ZPBF (Main Part) AOW482 (Substitute) Unit
Manufacturer Infineon Technologies Alpha & Omega Semiconductor Inc.
Product Status Obsolete Active
FET Type N-Channel N-Channel
Drain to Source Voltage (Vdss) 100 80 V
Continuous Drain Current (Id) @ 25°C 120 (Tc) 105 (Tc) A
On-State Resistance (Rds On) 6 @ 75A, 10V 7.2 @ 20A, 10V mOhm
Gate Threshold Voltage (Vgs(th)) 4 @ 150µA 3.7 @ 250µA V
Gate Charge (Qg) @ 10V 170 81 nC
Maximum Gate Voltage (Vgs) ±20 ±25 V
Input Capacitance (Ciss) @ Vds 6860 @ 50V 4870 @ 40V pF
Power Dissipation (Max) 250 (Tc) 333 (Tc) W
Operating Temperature Range -55 to 175 -55 to 175 °C (TJ)
Package Type TO-262-3 TO-262-3 Through Hole
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

For Direct Substitution (Same Voltage Rating Required):

If the application circuit operates at or below 80V drain-to-source voltage, the AOW482 is suitable as an active substitute. The AOW482 provides equivalent or superior performance in continuous drain current (105A vs. 120A at Tc), lower gate charge (81 nC vs. 170 nC), and higher maximum power dissipation (333W vs. 250W at Tc). The AOW482 is an Active product with current manufacturing support, ensuring long-term availability compared to the Obsolete IRFSL4310ZPBF.

For Applications Requiring 100V Voltage Rating:

If the circuit design requires the full 100V voltage rating of the IRFSL4310ZPBF, the AOW482 is not suitable due to its 80V maximum Vdss rating. Alternative N-Channel MOSFETs rated for 100V or higher with TO-262 packaging must be evaluated from other manufacturers.

Compliance Considerations:

Both devices are ROHS3 Compliant, REACH Unaffected, and classified under ECCN EAR99. Both devices have MSL 1 (Unlimited) moisture sensitivity, indicating no special storage or handling requirements. These compliance profiles are equivalent and support direct substitution from a regulatory standpoint.

Package Compatibility:

Both devices use TO-262-3 Long Leads (I2PAK, TO-262AA) through-hole packaging. Mechanical and thermal interface compatibility with existing PCB layouts and heatsinking is maintained.

Frequently Asked Questions (FAQ)

Q: Can the AOW482 replace the IRFSL4310ZPBF in all applications?

A: The AOW482 is suitable only for applications where the circuit operates at 80V or lower drain-to-source voltage. If your circuit requires the full 100V voltage rating of the IRFSL4310ZPBF, the AOW482 cannot be used as a direct substitute.

Q: What is the primary difference between these two devices?

A: The main difference is the maximum drain-to-source voltage rating: IRFSL4310ZPBF is rated for 100V, while AOW482 is rated for 80V. The AOW482 offers lower gate charge and higher power dissipation capability at the case temperature.

Q: Are the packages physically compatible?

A: Yes. Both devices use the TO-262-3 Long Leads (I2PAK, TO-262AA) through-hole package. They are mechanically and thermally compatible with existing PCB layouts designed for the IRFSL4310ZPBF.

Q: What is the product status difference, and why does it matter?

A: The IRFSL4310ZPBF is Obsolete, meaning Infineon no longer manufactures it. The AOW482 is Active, indicating Alpha & Omega Semiconductor Inc. continues production with current manufacturing support. Active status ensures long-term availability for future orders and replacements.

Q: Are there any compliance or regulatory differences?

A: No. Both devices are ROHS3 Compliant, REACH Unaffected, and carry the same ECCN (EAR99) and HTSUS classifications. Both have MSL 1 (Unlimited) moisture sensitivity. Compliance profiles are equivalent.

Q: How do the electrical characteristics compare?

A: The AOW482 has lower on-state resistance at the specified test point (7.2 mOhm vs. 6 mOhm), lower gate charge (81 nC vs. 170 nC), and higher maximum power dissipation (333W vs. 250W at case temperature). These characteristics may result in improved switching speed and reduced thermal load in the application circuit.

Q: What should I verify before substituting the AOW482?

A: Confirm that your circuit design operates at 80V or lower drain-to-source voltage. Verify that the lower gate charge of the AOW482 (81 nC vs. 170 nC) is compatible with your gate drive circuit. Confirm PCB layout and heatsinking are compatible with the TO-262 package.

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