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IRFSL4115PBF N-Channel MOSFET 150V 195A Equivalent & Substitute Parts
Part Overview
The IRFSL4115PBF is an N-Channel MOSFET manufactured by Infineon Technologies, designed for high-current switching applications requiring 150V drain-to-source voltage capability and 195A continuous drain current at 25°C. This device features the HEXFET® series technology in a Through Hole TO-262 package configuration.
The IRFSL4115PBF is classified as Obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 150 | V |
| Continuous Drain Current (Id) @ 25°C | 195 | A (Tc) |
| On-State Drain Resistance (Rds On Max) @ Id, Vgs | 12.1 mOhm @ 62A, 10V | mOhm |
| Gate Threshold Voltage (Vgs(th) Max) @ Id | 5 | V @ 250µA |
| Power Dissipation (Max) | 375 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Mounting Type | Through Hole | — |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
Substitute Part Grouping Explanation
Substitute parts for the IRFSL4115PBF are identified based on strict alignment of the following electrical and mechanical parameters:
Primary Substitution Criteria:
- Drain to Source Voltage (Vdss): Must equal 150V
- FET Type: Must be N-Channel
- Technology: Must be MOSFET (Metal Oxide)
- Mounting Type: Must be Through Hole
- Package / Case: Must be compatible TO-262 variant (TO-262-3 Long Leads, I2PAK, TO-262AA)
- Operating Temperature Range: Must support -55°C to 175°C (TJ)
- Gate Voltage Maximum (Vgs Max): Must support ±20V
Secondary Compatibility Parameters:
- Continuous Drain Current (Id): Substitute must support the application's current requirements
- On-State Drain Resistance (Rds On): Lower or equal values indicate improved performance
- Power Dissipation: Must meet thermal design requirements
- Gate Charge (Qg): Affects switching speed and drive circuit requirements
The IPI075N15N3GXKSA1 meets all primary substitution criteria and is classified as Active product status, providing long-term availability assurance.
Parameter Comparison
| Parameter | IRFSL4115PBF | IPI075N15N3GXKSA1 | Unit |
|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | — |
| Product Status | Obsolete | Active | — |
| FET Type | N-Channel | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 150 | 150 | V |
| Continuous Drain Current (Id) @ 25°C | 195 | 100 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.1 mOhm @ 62A, 10V | 7.5 mOhm @ 100A, 10V | mOhm |
| Gate Threshold Voltage (Vgs(th) Max) @ Id | 5 V @ 250µA | 4 V @ 270µA | V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10V | 93 nC @ 10V | nC |
| Vgs (Max) | ±20 | ±20 | V |
| Input Capacitance (Ciss) (Max) @ Vds | 5270 pF @ 50V | 5470 pF @ 75V | pF |
| Power Dissipation (Max) | 375 | 300 | W (Tc) |
| Operating Temperature Range | -55 to 175 | -55 to 175 | °C (TJ) |
| Mounting Type | Through Hole | Through Hole | — |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA | TO-262-3 Long Leads, I2PAK, TO-262AA | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | — |
| REACH Status | REACH Unaffected | REACH Unaffected | — |
| ECCN | EAR99 | EAR99 | — |
| HTSUS | 8541.29.0095 | 8541.29.0095 | — |
Engineering Selection Recommendations
Product Status Consideration: The IRFSL4115PBF is classified as Obsolete. The IPI075N15N3GXKSA1 is classified as Active, indicating current manufacturing support and long-term availability from Infineon Technologies.
Compliance and Certification Alignment: Both parts share identical regulatory classifications: REACH Unaffected status, EAR99 ECCN designation, and HTSUS code 8541.29.0095. Both devices maintain MSL Level 1 (Unlimited) moisture sensitivity rating, indicating equivalent handling and storage requirements.
Electrical Parameter Compatibility: Both devices operate at identical Vdss (150V), support identical gate voltage ranges (±20V), and share the same operating temperature envelope (-55°C to 175°C TJ). The IPI075N15N3GXKSA1 demonstrates improved on-state resistance characteristics (7.5 mOhm vs. 12.1 mOhm) and reduced gate charge (93 nC vs. 120 nC), resulting in lower switching losses and improved thermal performance.
Current Rating Consideration: The IPI075N15N3GXKSA1 specifies 100A continuous drain current, compared to 195A for the IRFSL4115PBF. Selection of this substitute requires confirmation that application current requirements do not exceed 100A at 25°C.
Thermal Design: The IPI075N15N3GXKSA1 specifies 300W maximum power dissipation versus 375W for the IRFSL4115PBF. Thermal design calculations must account for this reduced power rating in high-dissipation applications.
Package Compatibility: Both devices utilize Through Hole mounting in TO-262-3 Long Leads, I2PAK, TO-262AA package configurations, ensuring direct mechanical and electrical compatibility with existing PCB layouts.
Frequently Asked Questions (FAQ)
Q: Can the IPI075N15N3GXKSA1 directly replace the IRFSL4115PBF in all applications?
A: Direct replacement is possible only when application drain current requirements do not exceed 100A at 25°C. The IPI075N15N3GXKSA1 is rated for 100A continuous drain current, while the IRFSL4115PBF is rated for 195A. Applications requiring current above 100A require alternative solutions or circuit redesign.
Q: What are the key electrical differences between these two parts?
A: The primary electrical differences are continuous drain current rating (195A vs. 100A), on-state resistance (12.1 mOhm vs. 7.5 mOhm at specified conditions), gate charge (120 nC vs. 93 nC), and maximum power dissipation (375W vs. 300W). Both devices share identical Vdss (150V), gate voltage range (±20V), and operating temperature range (-55°C to 175°C TJ).
Q: Are there package compatibility concerns?
A: No. Both devices use Through Hole mounting in TO-262-3 Long Leads, I2PAK, TO-262AA package configurations. PCB layouts designed for the IRFSL4115PBF accommodate the IPI075N15N3GXKSA1 without modification.
Q: What is the significance of the IPI075N15N3GXKSA1 being Active versus the IRFSL4115PBF being Obsolete?
A: Active product status indicates current manufacturing support and long-term availability from Infineon Technologies. Obsolete status indicates the IRFSL4115PBF is no longer in production. Transitioning to the IPI075N15N3GXKSA1 ensures continued supply chain access and manufacturing support.
Q: How do the gate charge specifications affect circuit design?
A: Gate charge (Qg) determines the energy required to switch the MOSFET and influences gate drive circuit design. The IPI075N15N3GXKSA1 specifies 93 nC versus 120 nC for the IRFSL4115PBF. Lower gate charge reduces switching losses and may allow use of lower-power gate drive circuits.
Q: Are regulatory and compliance requirements identical?
A: Yes. Both devices share identical REACH status (REACH Unaffected), ECCN designation (EAR99), HTSUS code (8541.29.0095), and MSL rating (Level 1, Unlimited). No additional compliance documentation or certification is required when transitioning between these parts.
Q: What thermal considerations apply to the IPI075N15N3GXKSA1?
A: The IPI075N15N3GXKSA1 specifies 300W maximum power dissipation compared to 375W for the IRFSL4115PBF. Thermal design calculations must account for this 75W reduction in maximum dissipation capacity. Applications operating near thermal limits require thermal analysis to confirm adequate heat dissipation with the substitute part.
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