IRFSL3107PBF N-Channel MOSFET 75V 195A Equivalent & Substitute Parts

Part Overview

The IRFSL3107PBF is an N-Channel MOSFET manufactured by Infineon Technologies, designed for high-current switching applications with a 75V drain-to-source voltage rating and 195A continuous drain current capability. This device features a Through Hole TO-262 package and is part of the HEXFET® series. The IRFSL3107PBF is classified as Obsolete, making identification of functionally equivalent substitute components essential for ongoing design support, maintenance, and production continuity. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current handling, on-resistance characteristics, and thermal performance while accommodating the same or compatible package configurations.

Substiute Parts

IRFSL3107PBF

Infineon TechnologiesIn Stock: 2493IRFSL3107PBF Datasheet

Current PartRFQ

IRFSL3207ZPBF

Infineon TechnologiesIn Stock: 1579IRFSL3207ZPBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute component identification for the IRFSL3107PBF is based on strict electrical and mechanical parameter alignment within the N-Channel MOSFET category. The primary substitution criterion is maintenance of the 75V Vdss rating, which defines the maximum voltage stress capability of the device. Secondary criteria include compatible continuous drain current rating, on-resistance characteristics, gate charge specifications, and thermal dissipation capacity. The substitute part must operate within the same temperature range (-55°C to 175°C) and utilize the same Through Hole TO-262 package configuration to ensure mechanical and thermal compatibility with existing PCB layouts and thermal management systems.

The IRFSL3207ZPBF qualifies as a substitute based on the following alignment:

• Identical Vdss rating: 75V
• Compatible package: TO-262-3 Long Leads, I2PAK, TO-262AA
• Matching operating temperature range: -55°C to 175°C
• Equivalent gate drive voltage: 10V
• Vgs(th) threshold voltage: 4V @ specified test current
• Vgs maximum rating: ±20V
• RoHS3 compliance and REACH unaffected status

Current rating differences (195A vs. 120A) and on-resistance variations reflect design trade-offs within the same voltage class and package family. These differences must be evaluated against specific application requirements.

Parameter Comparison

Engineering Selection Recommendations

Selection between the IRFSL3107PBF and IRFSL3207ZPBF must be based on application-specific current requirements and thermal management constraints. The IRFSL3107PBF provides higher continuous drain current (195A) and lower on-resistance (3 mOhm @ 140A, 10V), supporting applications requiring maximum current handling within the 75V voltage class. The IRFSL3207ZPBF, classified as Active product status, offers ongoing manufacturing support and availability, with reduced gate charge (170 nC vs. 240 nC) and lower input capacitance (6920 pF vs. 9370 pF), which may reduce gate drive power requirements in high-frequency switching applications.

Both devices maintain identical voltage ratings, temperature operating ranges, and package configurations. Both achieve ROHS3 compliance and REACH unaffected status, ensuring regulatory alignment for current design standards. The transition from the Obsolete IRFSL3107PBF to the Active IRFSL3207ZPBF is supported by Infineon Technologies as the manufacturer-recommended substitute, providing assurance of long-term supply chain continuity and technical support.

Frequently Asked Questions (FAQ)

Q: Can the IRFSL3207ZPBF directly replace the IRFSL3107PBF in existing designs?

A: Direct replacement is possible when application current requirements do not exceed 120A continuous drain current. The identical 75V Vdss rating, TO-262 package configuration, and matching operating temperature range (-55°C to 175°C) ensure mechanical and electrical compatibility. Designs operating at continuous currents above 120A require thermal and circuit analysis to confirm the IRFSL3207ZPBF can meet performance specifications.

Q: What are the key differences between these two devices?

A: The primary differences are continuous drain current rating (195A vs. 120A), on-resistance characteristics (3 mOhm vs. 4.1 mOhm at respective test conditions), gate charge (240 nC vs. 170 nC), and power dissipation capacity (370W vs. 300W). Product status differs, with IRFSL3107PBF classified as Obsolete and IRFSL3207ZPBF as Active. These differences reflect design optimization within the same voltage class and package family.

Q: Are both devices available in the same package?

A: Yes. Both the IRFSL3107PBF and IRFSL3207ZPBF utilize the TO-262-3 Long Leads package configuration (also designated I2PAK, TO-262AA), ensuring identical PCB footprint and thermal interface compatibility.

Q: What is the significance of the Obsolete product status for IRFSL3107PBF?

A: Obsolete status indicates that Infineon Technologies has discontinued active manufacturing and support for the IRFSL3107PBF. Existing inventory may be available from authorized distributors, but long-term supply cannot be guaranteed. The IRFSL3207ZPBF, classified as Active, represents the current-generation equivalent with ongoing manufacturing support and availability assurance.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the total charge required to switch the MOSFET from off to on state. The IRFSL3107PBF requires 240 nC at 10V gate drive, while the IRFSL3207ZPBF requires 170 nC. Lower gate charge in the substitute part reduces gate drive power dissipation and may allow faster switching transitions, benefiting high-frequency applications. Gate driver circuits must be verified to supply adequate current for the selected device.

Q: Are there compliance or regulatory differences between these parts?

A: Both devices maintain identical RoHS3 compliance and REACH unaffected status. No regulatory or compliance differences exist between the IRFSL3107PBF and IRFSL3207ZPBF, ensuring equivalent suitability for applications subject to environmental and hazardous substance restrictions.