IRFS9N60A N-Channel 600V 9.2A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFS9N60A is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 600V drain-to-source voltage with 9.2A continuous drain current at 25°C. The device is housed in a TO-263 (D2PAK) surface mount package and dissipates up to 170W at the case temperature. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing production and design continuity. The IRFS9N60APBF represents the active production equivalent with identical electrical specifications but improved RoHS compliance status.

Substiute Parts

IRFS9N60A
Vishay SiliconixIn Stock: 1569IRFS9N60A Datasheet
IRFS9N60A
Current Part
IRFS9N60APBF
Vishay SiliconixIn Stock: 35255IRFS9N60APBF Datasheet
IRFS9N60APBF
Parametric Equivalent
IRF540NSTRLPBF
Infineon TechnologiesIn Stock: 35365IRF540NSTRLPBF Datasheet
IRF540NSTRLPBF
MFR Recommended
IXFA10N60P
IXYSIn Stock: 1227IXFA10N60P Datasheet
IXFA10N60P
MFR Recommended
STB10N60M2
STMicroelectronicsIn Stock: 1984STB10N60M2 Datasheet
STB10N60M2
MFR Recommended
STB10NK60ZT4
STMicroelectronicsIn Stock: 15457STB10NK60ZT4 Datasheet
STB10NK60ZT4
MFR Recommended
STB9NK60ZT4
STMicroelectronicsIn Stock: 3232STB9NK60ZT4 Datasheet
STB9NK60ZT4
MFR Recommended
STD7ANM60N
STMicroelectronicsIn Stock: 1615STD7ANM60N Datasheet
STD7ANM60N
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 9.2 A
Rds On (Max) @ 5.5A, 10V 750 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Power Dissipation (Max) 170 W
Operating Temperature Range -55 to 150 °C
Mounting Type Surface Mount
Package TO-263 (D2PAK)

Substitute Part Grouping Explanation

Substitution of the IRFS9N60A is determined by the following critical parameters: drain-to-source voltage rating (Vdss), continuous drain current capability (Id), on-state resistance (Rds On), gate threshold voltage (Vgs(th)), power dissipation rating, operating temperature range, and package type. All substitute parts must maintain the same or superior electrical performance within these specifications to ensure functional compatibility in the target application.

The substitute parts are grouped into two categories:

Direct Parametric Equivalent: IRFS9N60APBF maintains identical electrical specifications to the IRFS9N60A with the same Vdss (600V), Id (9.2A), Rds On (750mOhm), and power dissipation (170W). The primary difference is product status (active versus obsolete) and RoHS compliance improvement.

Functional Alternatives: Parts including STB10N60M2, IXFA10N60P, STB10NK60ZT4, STB9NK60ZT4, and STD7ANM60N provide alternative solutions with variations in current rating, power dissipation, on-state resistance, and package type. These parts maintain the 600V Vdss rating and surface mount configuration but differ in other electrical characteristics.

Non-Equivalent Part: IRF540NSTRLPBF is listed in the original substitute data but operates at 100V Vdss, making it unsuitable for 600V applications and therefore not a valid substitute for the IRFS9N60A.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (mOhm) Power Dissipation (W) Package Product Status RoHS Status
IRFS9N60A Vishay Siliconix 600 9.2 750 @ 5.5A, 10V 170 TO-263 (D2PAK) Obsolete Non-compliant
IRFS9N60APBF Vishay Siliconix 600 9.2 750 @ 5.5A, 10V 170 TO-263 (D2PAK) Active ROHS3 Compliant
IXFA10N60P IXYS 600 10 740 @ 5A, 10V 200 TO-263AA (IXFA) Active ROHS3 Compliant
STB10N60M2 STMicroelectronics 600 7.5 600 @ 3A, 10V 85 TO-263 (D2PAK) Active ROHS3 Compliant
STB10NK60ZT4 STMicroelectronics 600 10 750 @ 4.5A, 10V 115 D2PAK Not For New Designs ROHS3 Compliant
STB9NK60ZT4 STMicroelectronics 600 7 950 @ 3.5A, 10V 125 D2PAK Active ROHS3 Compliant
STD7ANM60N STMicroelectronics 600 5 900 @ 2.5A, 10V 45 DPAK Active ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: IRFS9N60APBF is the direct parametric equivalent and preferred substitute. It maintains identical electrical specifications (600V, 9.2A, 750mOhm Rds On, 170W dissipation) and identical package configuration (TO-263 D2PAK). The part is in active production status with ROHS3 compliance, eliminating obsolescence risk while providing drop-in compatibility.

Secondary Alternatives for Current-Rated Applications: IXFA10N60P provides a 600V, 10A rated device with superior power dissipation (200W) and marginally lower on-state resistance (740mOhm). This part is suitable for applications requiring higher current headroom. STB10NK60ZT4 offers 600V, 10A rating with 750mOhm Rds On but carries "Not For New Designs" status, limiting its use to legacy system maintenance.

Lower Current Alternatives: STB10N60M2 (7.5A) and STB9NK60ZT4 (7A) are suitable only for applications with reduced current requirements. STD7ANM60N (5A, DPAK package) represents the lowest current option and requires package-level redesign due to different footprint.

Compliance Consideration: All recommended active substitutes carry ROHS3 compliance certification, addressing regulatory requirements for new designs. The original IRFS9N60A is RoHS non-compliant, making IRFS9N60APBF the mandatory choice for RoHS-regulated applications.

Frequently Asked Questions (FAQ)

Q: Can IRFS9N60APBF directly replace IRFS9N60A without circuit modification?

A: Yes. IRFS9N60APBF is a direct parametric equivalent with identical Vdss (600V), Id (9.2A), Rds On (750mOhm), gate threshold voltage (4V), and power dissipation (170W). The TO-263 D2PAK package footprint is identical. No circuit or PCB modifications are required.

Q: What is the key difference between IRFS9N60A and IRFS9N60APBF?

A: The primary differences are product status and RoHS compliance. IRFS9N60A is obsolete and RoHS non-compliant. IRFS9N60APBF is in active production with ROHS3 compliance. Electrical performance is identical.

Q: Can IXFA10N60P be used as a substitute in all applications?

A: IXFA10N60P is suitable for applications where the higher current rating (10A versus 9.2A) and increased power dissipation (200W versus 170W) do not create thermal or electrical conflicts. The 600V Vdss rating and similar Rds On (740mOhm) ensure voltage and switching performance compatibility. However, the TO-263AA package variant may have minor footprint differences requiring verification.

Q: Why is STD7ANM60N not recommended as a direct substitute?

A: STD7ANM60N uses a DPAK package (TO-252-3) instead of the D2PAK (TO-263) package of the IRFS9N60A. This requires PCB redesign and component repositioning. Additionally, the 5A current rating is significantly lower than the 9.2A specification, limiting its use to lower-power applications only.

Q: Is STB10NK60ZT4 suitable for new designs?

A: No. STB10NK60ZT4 carries "Not For New Designs" product status. While it provides 600V, 10A performance with D2PAK packaging, it should be used only for legacy system maintenance or repair. New designs should use IRFS9N60APBF or IXFA10N60P.

Q: What is the significance of the Rds On specification in selecting a substitute?

A: On-state resistance (Rds On) directly affects power dissipation and thermal performance. Lower Rds On values reduce heat generation. The IRFS9N60A specifies 750mOhm at 5.5A and 10V gate drive. Substitutes with similar or lower Rds On values maintain thermal characteristics. Higher Rds On values increase power dissipation and may require enhanced thermal management.

Q: Are all substitute parts rated for the same operating temperature range?

A: Most substitutes maintain the -55°C to 150°C operating range. IRF540NSTRLPBF extends to 175°C, but this part is not a valid substitute due to its 100V Vdss rating. Verify operating temperature requirements for your specific application before final part selection.

Q: What packaging considerations apply when selecting a substitute?

A: The IRFS9N60A uses TO-263 (D2PAK) surface mount packaging. IRFS9N60APBF and IXFA10N60P maintain compatible D2PAK/TO-263 packages. STD7ANM60N uses DPAK (TO-252), which has a different footprint and requires PCB redesign. Verify package compatibility with your PCB layout before substitution.

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