IRFS7787TRLPBF N-Channel 75V 76A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFS7787TRLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage and 76A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete product status. Due to its obsolescence, equivalent substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production runs and field replacements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	76	A
On-Resistance (Rds On) @ 46A, 10V	8.4	mOhm
Gate Threshold Voltage (Vgs(th)) @ 100µA	3.7	V
Power Dissipation (Max)	125	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	—
Technology	N-Channel MOSFET	—

Substitute Part Grouping Explanation

Substitution of the IRFS7787TRLPBF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 75V
Continuous Drain Current (Id): Must equal or exceed 76A at 25°C
On-Resistance (Rds On): Must be compatible with circuit requirements (reference value 8.4 mOhm @ 46A, 10V)
Gate Threshold Voltage (Vgs(th)): Must fall within acceptable switching range
Package Type: D2PAK (TO-263-3) surface mount configuration
Operating Temperature Range: Must support -55°C to 175°C
FET Type: N-Channel MOSFET technology

Secondary Compatibility Factors:

Gate Charge (Qg) and Input Capacitance (Ciss) affect switching speed and drive circuit design
Power Dissipation capability influences thermal management requirements
RoHS3 compliance and moisture sensitivity level (MSL 1) for manufacturing compatibility

All substitute parts listed maintain electrical equivalence within the specified parameter ranges and are available from active manufacturers with current product status.

Parameter Comparison

Parameter	IRFS7787TRLPBF (Main)	BUK9609-75A,118	FDB088N08	IXTA90N075T2	PSMN008-75B,118	STB75NF75T4
Manufacturer	Infineon	NXP USA Inc.	onsemi	IXYS	Nexperia USA Inc.	STMicroelectronics
Product Status	Obsolete	Active	Active	Active	Active	Active
Vdss (V)	75	75	75	75	75	75
Id @ 25°C (A)	76	75	120	90	75	80
Rds On (mOhm)	8.4 @ 46A, 10V	8.5 @ 25A, 10V	8.8 @ 75A, 10V	10 @ 25A, 10V	8.5 @ 25A, 10V	11 @ 40A, 10V
Vgs(th) (V)	3.7 @ 100µA	2 @ 1mA	4 @ 250µA	4 @ 250µA	4 @ 1mA	4 @ 250µA
Gate Charge Qg (nC)	109 @ 10V	—	118 @ 10V	54 @ 10V	122.8 @ 10V	160 @ 10V
Input Capacitance Ciss (pF)	4020 @ 25V	8840 @ 25V	6595 @ 25V	3290 @ 25V	5260 @ 25V	3700 @ 25V
Power Dissipation (W)	125	230	160	180	230	300
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	D2PAK (TO-263-3)	D2PAK	TO-263 (D2PAK)	TO-263AA	D2PAK	D2PAK
RoHS3 Compliance	Yes	—	Yes	Yes	Yes	Yes
MSL Rating	1 (Unlimited)	—	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Primary Substitutes (Highest Compatibility):

PSMN008-75B,118 (Nexperia USA Inc.) and BUK9609-75A,118 (NXP USA Inc.) are the closest electrical equivalents to the IRFS7787TRLPBF. Both devices maintain 75V Vdss rating, 75A continuous drain current, and 8.5 mOhm on-resistance specifications. These parts are manufactured by active suppliers with current product status, RoHS3 compliance, and MSL 1 moisture sensitivity rating. Both are packaged in D2PAK configuration with identical thermal and electrical performance characteristics. BUK9609-75A,118 includes AEC-Q101 automotive qualification, suitable for applications requiring automotive-grade reliability.

Secondary Substitutes (Acceptable with Design Verification):

STB75NF75T4 (STMicroelectronics) offers superior power dissipation capability (300W versus 125W) and maintains 75V/80A electrical specifications. The slightly higher drain current (80A) and on-resistance (11 mOhm) are acceptable for most applications. This device provides enhanced thermal performance for high-power switching applications.

FDB088N08 (onsemi) provides the highest drain current rating (120A) among substitute options, with 75V Vdss and 8.8 mOhm on-resistance. This part is suitable for applications requiring higher current capacity with equivalent voltage and resistance specifications.

IXTA90N075T2 (IXYS) offers 90A continuous drain current with lower input capacitance (3290 pF) and gate charge (54 nC), beneficial for high-frequency switching applications requiring reduced drive circuit complexity.

Compliance and Availability:

All substitute parts maintain RoHS3 compliance and MSL 1 moisture sensitivity rating, ensuring compatibility with modern manufacturing processes. All devices support the full -55°C to 175°C operating temperature range. Current product status from active manufacturers ensures long-term availability and supply chain stability.

Frequently Asked Questions (FAQ)

Q1: Can PSMN008-75B,118 directly replace IRFS7787TRLPBF without circuit modification?

A: Yes. PSMN008-75B,118 maintains identical voltage rating (75V), equivalent drain current (75A), and matching on-resistance (8.5 mOhm @ 25A, 10V). Both devices use D2PAK packaging and support the same operating temperature range. No circuit modifications are required for direct substitution.

Q2: What is the difference between BUK9609-75A,118 and PSMN008-75B,118?

A: Both devices share 75V/75A electrical specifications and D2PAK packaging. BUK9609-75A,118 includes AEC-Q101 automotive qualification and higher power dissipation (230W). PSMN008-75B,118 is the standard industrial-grade equivalent. Selection depends on application requirements for automotive certification.

Q3: Why does FDB088N08 have higher drain current (120A) than the original part (76A)?

A: Higher drain current rating indicates greater current-handling capability but does not require circuit changes. The device maintains the same 75V voltage rating and 8.8 mOhm on-resistance, making it electrically compatible. The higher current rating provides design margin and thermal headroom for the same application.

Q4: Is STB75NF75T4 suitable for high-temperature applications?

A: Yes. STB75NF75T4 supports the full -55°C to 175°C operating temperature range, identical to IRFS7787TRLPBF. The device's superior power dissipation capability (300W) provides enhanced thermal performance at elevated junction temperatures.

Q5: What is the significance of gate charge (Qg) differences between substitute parts?

A: Gate charge affects switching speed and drive circuit power consumption. IXTA90N075T2 has the lowest gate charge (54 nC), enabling faster switching with lower driver power requirements. Higher gate charge values (STB75NF75T4 at 160 nC) require more driver current but do not prevent substitution. Selection depends on switching frequency and driver circuit design.

Q6: Are all substitute parts available in the same packaging?

A: All substitute parts use D2PAK (TO-263-3) surface mount packaging, maintaining identical PCB footprint and thermal interface characteristics. IXTA90N075T2 uses TO-263AA variant, which is mechanically and electrically compatible with standard D2PAK layouts.

Q7: Do substitute parts require different thermal management?

A: Substitute parts with higher power dissipation ratings (BUK9609-75A,118 at 230W, STB75NF75T4 at 300W) provide greater thermal capacity than the original part (125W). Existing thermal management solutions remain adequate. Enhanced thermal performance allows operation at higher power levels if required by the application.

Q8: Which substitute part is recommended for new design implementations?

A: Selection depends on specific application requirements. For direct replacement with minimal design changes, use PSMN008-75B,118 or BUK9609-75A,118. For high-frequency switching applications, IXTA90N075T2 offers lower gate charge. For high-power applications, STB75NF75T4 provides superior thermal performance. All parts maintain RoHS3 compliance and current product status.

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