IRFS7787PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFS7787PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage with 76A continuous drain current at 25°C. This device is part of the HEXFET® series and is housed in a Surface Mount TO-263AB (D2PAK) package. The IRFS7787PBF is currently discontinued at DiGi Electronics, making identification of equivalent substitute components essential for ongoing design support and production continuity. Equivalent parts must maintain electrical compatibility across voltage ratings, current handling, thermal characteristics, and package specifications to ensure direct functional replacement without circuit redesign.

Substiute Parts

IRFS7787PBF
Infineon TechnologiesIn Stock: 2629IRFS7787PBF Datasheet
IRFS7787PBF
Current Part
BUK9609-75A,118
NXP USA Inc.In Stock: 1759BUK9609-75A,118 Datasheet
BUK9609-75A,118
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 75 V
Continuous Drain Current (Id) @ 25°C 76 A
Rds On (Max) @ 46A, 10V 8.4 mOhm
Power Dissipation (Max) 125 W
Gate Charge (Qg) @ 10V 109 nC
Input Capacitance (Ciss) @ 25V 4020 pF
Operating Temperature Range -55 to 175 °C
Package Type TO-263AB (D2PAK) Surface Mount
Vgs (Max) ±20 V

Substitute Part Grouping Explanation

Substitution eligibility for the IRFS7787PBF is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal 75V
  • Continuous Drain Current (Id): Must be within the operational range of the circuit (76A nominal for IRFS7787PBF)
  • Package Type: Must be TO-263AB (D2PAK) Surface Mount to ensure mechanical and thermal compatibility
  • Operating Temperature Range: Must encompass -55°C to 175°C
  • RDS(on) Characteristics: Must be compatible with circuit switching and thermal requirements

Secondary Compatibility Parameters:

  • Gate Charge (Qg): Affects gate drive circuit design; lower values reduce drive requirements
  • Input Capacitance (Ciss): Influences switching speed and gate drive power consumption
  • Vgs (Max): Gate voltage rating must accommodate circuit drive voltage

The BUK9609-75A,118 from NXP USA Inc. meets the primary substitution criteria with matching 75V Vdss rating, comparable 75A continuous drain current, identical D2PAK package, and equivalent operating temperature range. Both devices are N-Channel MOSFETs with Surface Mount configuration, enabling direct functional replacement in circuit applications.

Parameter Comparison

Parameter IRFS7787PBF (Infineon) BUK9609-75A,118 (NXP) Unit
Manufacturer Infineon Technologies NXP USA Inc.
FET Type N-Channel N-Channel
Drain to Source Voltage (Vdss) 75 75 V
Continuous Drain Current (Id) @ 25°C 76 75 A
Rds On (Max) 8.4 @ 46A, 10V 8.5 @ 25A, 10V mOhm
Power Dissipation (Max) 125 230 W
Gate Charge (Qg) @ 10V 109 Not provided nC
Input Capacitance (Ciss) @ 25V 4020 8840 pF
Operating Temperature Range -55 to 175 -55 to 175 °C
Vgs (Max) ±20 ±10 V
Package Type TO-263AB (D2PAK) D2PAK Surface Mount
Product Status Discontinued at DiGi Electronics Active
Automotive Grade Not specified AEC-Q101

Engineering Selection Recommendations

The BUK9609-75A,118 serves as a direct functional equivalent to the discontinued IRFS7787PBF based on the following engineering criteria:

Electrical Compatibility: Both devices share identical 75V Vdss ratings and comparable continuous drain current specifications (76A vs. 75A), ensuring equivalent voltage and current handling capacity in circuit applications. RDS(on) values are nearly identical (8.4 mOhm vs. 8.5 mOhm), maintaining consistent on-state power dissipation characteristics.

Thermal Performance: The BUK9609-75A,118 provides superior thermal performance with 230W maximum power dissipation compared to 125W for the IRFS7787PBF, offering additional thermal margin in applications with elevated ambient temperatures or high switching frequencies.

Package Compatibility: Both devices utilize the TO-263AB (D2PAK) Surface Mount package with identical pinout and thermal tab configuration, enabling direct PCB footprint compatibility without layout modifications.

Operating Range: Matching -55°C to 175°C junction temperature operating ranges ensure equivalent performance across industrial and automotive temperature specifications.

Product Status and Compliance: The BUK9609-75A,118 maintains Active product status with AEC-Q101 automotive qualification, providing long-term availability and supply chain stability. The IRFS7787PBF discontinuation status necessitates transition to this equivalent part for new designs and production continuity.

Gate Voltage Consideration: The BUK9609-75A,118 specifies ±10V maximum gate voltage compared to ±20V for the IRFS7787PBF. Verify that circuit gate drive voltage does not exceed ±10V to ensure compatibility.

Frequently Asked Questions (FAQ)

Q: Can the BUK9609-75A,118 directly replace the IRFS7787PBF without PCB modifications?

A: Yes. Both devices share identical TO-263AB (D2PAK) Surface Mount packages with matching pinout and thermal tab configuration. Direct PCB footprint compatibility is confirmed. No layout changes are required.

Q: What are the key electrical differences between these two MOSFETs?

A: The primary differences are: (1) Continuous drain current is 76A (IRFS7787PBF) versus 75A (BUK9609-75A,118), a 1A difference within typical circuit tolerance; (2) Maximum gate voltage is ±20V (IRFS7787PBF) versus ±10V (BUK9609-75A,118); (3) Input capacitance is 4020 pF (IRFS7787PBF) versus 8840 pF (BUK9609-75A,118), affecting gate drive circuit design; (4) Power dissipation rating is 125W (IRFS7787PBF) versus 230W (BUK9609-75A,118). Drain-to-source voltage (75V) and RDS(on) characteristics are equivalent.

Q: Is the higher input capacitance of the BUK9609-75A,118 a concern?

A: The BUK9609-75A,118 exhibits higher input capacitance (8840 pF vs. 4020 pF), which increases gate charge requirements and may increase gate drive power consumption. Verify that the gate drive circuit can supply sufficient current at the specified switching frequency. This is a design consideration, not a compatibility barrier.

Q: Does the ±10V gate voltage maximum of the BUK9609-75A,118 create compatibility issues?

A: The reduced gate voltage rating (±10V vs. ±20V) requires verification that your circuit gate drive voltage does not exceed ±10V. If your design applies gate voltages above ±10V, the BUK9609-75A,118 is not suitable. Confirm gate drive voltage specifications before substitution.

Q: What is the significance of the AEC-Q101 automotive qualification on the BUK9609-75A,118?

A: AEC-Q101 qualification indicates the BUK9609-75A,118 meets automotive industry reliability and quality standards. This certification is relevant only if your application requires automotive-grade components. For non-automotive applications, this qualification provides additional assurance of product quality and long-term availability.

Q: Why is the power dissipation rating higher for the BUK9609-75A,118?

A: The BUK9609-75A,118 is rated for 230W maximum power dissipation compared to 125W for the IRFS7787PBF. This higher rating reflects improved thermal design and does not indicate a functional difference. The higher rating provides additional thermal margin in applications with elevated switching losses or ambient temperatures.

Q: Are there any supply chain or availability differences between these parts?

A: The IRFS7787PBF is discontinued at DiGi Electronics, limiting future availability. The BUK9609-75A,118 maintains Active product status, ensuring ongoing supply chain availability and long-term design support. For new designs and production continuity, the BUK9609-75A,118 is the recommended choice.

Q: What parameters must remain constant for substitution to be valid?

A: Substitution validity depends on maintaining: (1) 75V drain-to-source voltage; (2) Continuous drain current within circuit operational range (75-76A); (3) TO-263AB (D2PAK) Surface Mount package; (4) Operating temperature range encompassing -55°C to 175°C; (5) RDS(on) characteristics compatible with circuit switching and thermal requirements. Deviations in these parameters require circuit re-evaluation.

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