IRFS7762PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFS7762PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage with 85A continuous drain current at 25°C. This device is housed in a TO-263AB (D2PAK) surface mount package and is part of the HEXFET® series. The IRFS7762PBF is currently discontinued at DiGi Electronics, making identification of equivalent substitute components essential for ongoing design support and production continuity. Equivalent parts must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging to ensure direct replacement capability.

Substiute Parts

IRFS7762PBF

Infineon TechnologiesIn Stock: 851IRFS7762PBF Datasheet

Current PartRFQ

HUF75345S3ST

onsemiIn Stock: 2028HUF75345S3ST Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFS7762PBF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

• FET Type: N-Channel topology required
• Package / Case: TO-263-3 or D2PAK (2 Leads + Tab) mechanical compatibility
• Drain to Source Voltage (Vdss): Must equal or exceed 75V
• Current - Continuous Drain (Id) @ 25°C: Must equal or exceed 85A
• Operating Temperature Range: Must support -55°C to 175°C (TJ)
• RoHS Compliance: ROHS3 Compliant status required

Secondary Compatibility Parameters:

• Rds On (Max): Lower or equal values indicate improved performance
• Power Dissipation (Max): Equal or higher ratings ensure thermal capability
• Vgs (Max): ±20V gate voltage rating for drive circuit compatibility
• Mounting Type: Surface Mount required for PCB assembly compatibility

The HUF75345S3ST from onsemi qualifies as a substitute based on matching package type (TO-263 D2PAK), N-Channel topology, and compliance certifications. However, this part operates at reduced voltage (55V Vdss) and current (75A Id) ratings compared to the IRFS7762PBF, making it suitable only for applications where these lower ratings are acceptable.

Parameter Comparison

Engineering Selection Recommendations

For Direct Replacement (Same Electrical Ratings):

No equivalent substitute with identical 75V / 85A ratings is provided in the available substitute list. The HUF75345S3ST operates at reduced voltage and current specifications and should not be selected for applications requiring the full 75V / 85A performance envelope of the IRFS7762PBF.

For Reduced-Rating Applications:

The HUF75345S3ST (onsemi) is suitable only for applications where both the following conditions are met:

• Maximum drain-to-source voltage does not exceed 55V
• Maximum continuous drain current does not exceed 75A

This substitute maintains mechanical compatibility (TO-263 D2PAK package), thermal performance (325W vs. 140W), and regulatory compliance (ROHS3, REACH Unaffected, EAR99 ECCN). Both parts operate across the identical temperature range (-55°C to 175°C TJ) and accept ±20V gate voltage.

Product Status Consideration:

The IRFS7762PBF is discontinued at DiGi Electronics. For new designs or production continuation, evaluation of alternative N-Channel MOSFETs with 75V+ Vdss and 85A+ Id ratings in TO-263 packaging is recommended. The substitute list provided contains only the HUF75345S3ST, which does not meet the full electrical specifications of the original part.

Frequently Asked Questions (FAQ)

Q: Can the HUF75345S3ST directly replace the IRFS7762PBF in all applications?

A: No. The HUF75345S3ST is rated for 55V Vdss and 75A Id, compared to the IRFS7762PBF's 75V and 85A ratings. Direct replacement is only possible in applications where the circuit operates below 55V and draws less than 75A continuous drain current.

Q: Are the packages mechanically compatible?

A: Yes. Both the IRFS7762PBF and HUF75345S3ST use the TO-263-3 D2PAK (2 Leads + Tab) package. Pin-to-pin compatibility is confirmed, allowing for direct PCB footprint reuse without layout modification.

Q: What are the key electrical differences between these parts?

A: The primary differences are Vdss (75V vs. 55V), Id (85A vs. 75A), and power dissipation (140W vs. 325W). The HUF75345S3ST has lower voltage and current ratings but higher thermal dissipation capability. On-resistance values are comparable (6.7 mOhm vs. 7 mOhm).

Q: Do both parts meet the same compliance standards?

A: Yes. Both the IRFS7762PBF and HUF75345S3ST are ROHS3 Compliant, REACH Unaffected, and classified under ECCN EAR99. Moisture sensitivity level is 1 (Unlimited) for both parts.

Q: What is the operating temperature range for both devices?

A: Both parts operate across -55°C to 175°C junction temperature (TJ), providing identical thermal operating windows.

Q: Can gate drive circuits designed for the IRFS7762PBF be used with the HUF75345S3ST?

A: Yes. Both parts accept ±20V maximum gate voltage (Vgs Max) and have comparable gate charge characteristics, allowing existing gate drive circuits to function with either device.

Q: What should be verified before selecting the HUF75345S3ST as a substitute?

A: Verify that the application circuit operates at or below 55V drain-to-source voltage and requires continuous drain current not exceeding 75A. Confirm that the reduced electrical ratings do not compromise circuit performance or safety margins.