IRFS7730PBF N-Channel MOSFET 75V 195A Equivalent & Substitute Parts

Part Overview

The IRFS7730PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage with 195A continuous drain current at 25°C. This device is housed in a D2PAK (TO-263AB) surface mount package and delivers 375W maximum power dissipation. The IRFS7730PBF is discontinued at DiGi Electronics, making identification of equivalent substitute parts essential for ongoing design support and procurement.

Substiute Parts

IRFS7730PBF

Infineon TechnologiesIn Stock: 2306IRFS7730PBF Datasheet

Current PartRFQ

IRFS4115TRLPBF

Infineon TechnologiesIn Stock: 25270IRFS4115TRLPBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFS7730PBF is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• FET Type: N-Channel topology
• Mounting Type: Surface Mount
• Package / Case: D2PAK (TO-263-3, TO-263AB)
• Current - Continuous Drain (Id) @ 25°C: Minimum 195A (Tc)
• Power Dissipation (Max): Minimum 375W (Tc)
• Operating Temperature Range: -55°C to 175°C (TJ)
• RoHS Status: ROHS3 Compliant

Voltage Rating Consideration: The Drain to Source Voltage (Vdss) of 75V establishes the maximum voltage the device can block. Substitute parts may have equal or higher voltage ratings, as higher-rated devices remain functional in lower-voltage applications. However, the electrical characteristics and on-resistance behavior may differ with increased voltage ratings.

Parameter Comparison

Engineering Selection Recommendations

IRFS4115TRLPBF as Primary Substitute:

The IRFS4115TRLPBF qualifies as a direct substitute for the IRFS7730PBF based on the following factors:

1. Identical Continuous Drain Current: Both devices support 195A (Tc) continuous drain current at 25°C, meeting the current handling requirement.

2. Identical Power Dissipation Rating: Both devices are rated for 375W (Tc) maximum power dissipation, ensuring thermal performance equivalence.

3. Identical Operating Temperature Range: Both devices operate from -55°C to 175°C (TJ), providing equivalent thermal operating envelope.

4. Identical Package and Mounting: Both use D2PAK (TO-263-3, TO-263AB) surface mount packaging, ensuring mechanical and thermal interface compatibility.

5. Identical RoHS Compliance: Both devices are ROHS3 Compliant, meeting environmental and regulatory requirements.

6. Active Product Status: The IRFS4115TRLPBF is Active with 25200 Pcs in stock, providing superior long-term availability compared to the discontinued IRFS7730PBF.

7. Higher Voltage Rating: The IRFS4115TRLPBF features a 150V Vdss rating compared to 75V for the IRFS7730PBF. This higher voltage rating does not prevent substitution in 75V applications, as the device remains fully functional at lower voltages.

Design Consideration:

The IRFS4115TRLPBF exhibits higher on-resistance (12.1 mOhm @ 62A, 10V) compared to the IRFS7730PBF (2.6 mOhm @ 100A, 10V). This difference reflects the trade-off inherent in higher voltage-rated devices. Thermal analysis of the specific application circuit is required to confirm that the increased on-resistance does not exceed thermal design margins.

Frequently Asked Questions (FAQ)

Q1: Can the IRFS4115TRLPBF directly replace the IRFS7730PBF without circuit modification?

A: The IRFS4115TRLPBF is mechanically and electrically compatible with the IRFS7730PBF in terms of package, pinout, current rating, power dissipation, and operating temperature range. However, the higher on-resistance of the IRFS4115TRLPBF will result in increased power dissipation at equivalent current levels. Thermal analysis of the application circuit is necessary to confirm that heat dissipation remains within acceptable limits.

Q2: Why does the IRFS4115TRLPBF have a higher on-resistance despite identical current and power ratings?

A: The IRFS4115TRLPBF is rated for 150V Vdss compared to 75V for the IRFS7730PBF. Higher voltage-rated MOSFETs inherently exhibit higher on-resistance due to the thicker drift region required to support the higher blocking voltage. This is a fundamental trade-off in MOSFET design.

Q3: Are there any compatibility issues with the D2PAK package between these two devices?

A: Both devices use identical D2PAK (TO-263-3, TO-263AB) surface mount packaging. Pin configuration, lead spacing, and thermal interface are identical, ensuring direct mechanical compatibility on the PCB.

Q4: What is the significance of the higher Vdss rating on the IRFS4115TRLPBF?

A: The 150V Vdss rating on the IRFS4115TRLPBF provides additional voltage margin in applications where the IRFS7730PBF operates at 75V. The device will function correctly in any circuit designed for 75V operation. The higher voltage rating does not introduce any functional incompatibility.

Q5: How do the gate charge specifications compare between these devices?

A: The IRFS7730PBF has a gate charge of 407 nC @ 10V, while the IRFS4115TRLPBF has 120 nC @ 10V. The lower gate charge of the IRFS4115TRLPBF indicates faster switching characteristics, which may improve circuit efficiency in high-frequency switching applications.

Q6: Are both devices RoHS compliant?

A: Yes, both the IRFS7730PBF and IRFS4115TRLPBF are ROHS3 Compliant, meeting environmental and regulatory requirements for lead-free manufacturing and hazardous substance restrictions.

Q7: What is the moisture sensitivity level for these devices?

A: Both devices have a Moisture Sensitivity Level (MSL) of 1 (Unlimited), indicating no moisture sensitivity restrictions during storage and handling.

Q8: Why is the IRFS4115TRLPBF recommended despite the IRFS7730PBF having lower on-resistance?

A: The IRFS7730PBF is discontinued at DiGi Electronics, making it unavailable for new procurement. The IRFS4115TRLPBF is an active product with 25200 Pcs in stock, ensuring reliable long-term supply. While the on-resistance is higher, the device meets all mandatory compatibility criteria and remains suitable for applications where thermal margins accommodate the increased power dissipation.