IRFS7537PBF N-Channel MOSFET 60V 173A Equivalent & Substitute Parts

Part Overview

The IRFS7537PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage with 173A continuous drain current at 25°C. This device is packaged in D2PAK (TO-263-3) surface mount configuration and is designed for high-current switching applications. The part is currently discontinued at DiGi Electronics, making identification of equivalent and substitute components essential for design continuity and procurement planning. Substitute parts must maintain compatibility across voltage ratings, package type, and thermal performance characteristics to ensure functional equivalence in existing circuit designs.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	173	A (Tc)
On-Resistance (Rds On Max) @ 100A, 10V	3.3	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 150µA	3.7	V
Gate Charge (Qg Max) @ 10V	210	nC
Power Dissipation (Max)	230	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the IRFS7537PBF is determined by the following critical parameters:

Mandatory Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
Package Type: Must be D2PAK (TO-263-3) surface mount configuration
FET Type: N-Channel MOSFET technology
Operating Temperature Range: Must support -55°C to 175°C
RoHS Compliance: ROHS3 Compliant status required

Performance Parameters for Functional Equivalence:

Continuous Drain Current (Id): Substitute must support minimum 173A at 25°C or provide equivalent thermal performance
On-Resistance (Rds On): Lower or equivalent values ensure compatible switching characteristics
Gate Charge (Qg): Affects gate drive requirements and switching speed
Power Dissipation: Must support thermal load requirements of the application

The identified substitute parts meet these mandatory criteria while maintaining electrical and mechanical compatibility with the original IRFS7537PBF design.

Parameter Comparison

Parameter	IRFS7537PBF (Main)	IPB037N06N3GATMA1	AOB266L	Unit
Manufacturer	Infineon Technologies	Infineon Technologies	Alpha & Omega Semiconductor Inc.	—
FET Type	N-Channel	N-Channel	N-Channel	—
Vdss (Drain-Source Voltage)	60	60	60	V
Id @ 25°C (Continuous Drain Current)	173 (Tc)	90 (Tc)	140 (Tc)	A
Rds On (Max) @ 10V	3.3 @ 100A	3.7 @ 90A	3.2 @ 20A	mOhm
Vgs(th) (Max)	3.7 @ 150µA	4.0 @ 90µA	3.2 @ 250µA	V
Gate Charge (Qg Max) @ 10V	210	98	80	nC
Power Dissipation (Max)	230 (Tc)	188 (Tc)	268 (Tc)	W
Operating Temperature	-55 to 175	-55 to 175	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	D2PAK (TO-263-3)	D2PAK (TO-263-3)	—
Product Status	Discontinued	Active	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

IPB037N06N3GATMA1 (Infineon Technologies OptiMOS™ Series)

This substitute is manufactured by the same original equipment manufacturer as the IRFS7537PBF. The IPB037N06N3GATMA1 maintains identical voltage rating (60V Vdss) and package configuration (D2PAK TO-263-3). Current rating is 90A continuous at 25°C, which is lower than the original 173A specification. This part is currently in active production status with 14,999 pieces in stock inventory. ROHS3 compliance and operating temperature range (-55°C to 175°C) match the original specification. Gate charge is reduced to 98 nC, enabling faster switching response. On-resistance is 3.7 mOhm at 90A, 10V, providing comparable performance characteristics.

AOB266L (Alpha & Omega Semiconductor Inc.)

This substitute provides 140A continuous drain current at 25°C (Tc), approaching the original 173A specification more closely than the IPB037N06N3GATMA1. The AOB266L maintains 60V Vdss rating and D2PAK package compatibility. Maximum power dissipation reaches 268W (Tc), exceeding the original 230W specification. On-resistance is 3.2 mOhm at 20A, 10V. Gate charge is 80 nC, the lowest among all options, supporting rapid gate switching. This part is in active production with 10,165 pieces in stock. ROHS3 compliance and full operating temperature range compatibility are confirmed.

Both substitute parts satisfy mandatory compatibility requirements: identical voltage rating, D2PAK package type, N-Channel MOSFET technology, and RoHS3 compliance. Selection between these options depends on application current requirements and gate drive circuit design parameters.

Frequently Asked Questions (FAQ)

Q: Can the IPB037N06N3GATMA1 directly replace the IRFS7537PBF in all applications?

A: The IPB037N06N3GATMA1 shares identical voltage rating (60V), package type (D2PAK), and operating temperature range with the IRFS7537PBF. However, continuous drain current is rated at 90A versus the original 173A. Direct substitution is valid only for applications where the circuit current requirement does not exceed 90A at 25°C. Thermal analysis must confirm that the lower current rating and 188W power dissipation are sufficient for the intended application.

Q: What is the primary difference between the two substitute parts?

A: The AOB266L provides higher continuous drain current (140A Tc) compared to the IPB037N06N3GATMA1 (90A Tc), making it more suitable for high-current applications. The IPB037N06N3GATMA1 is manufactured by Infineon Technologies, the original IRFS7537PBF manufacturer, ensuring design continuity within the same product ecosystem. Both parts maintain identical 60V voltage rating and D2PAK package compatibility.

Q: Are both substitute parts available in the same packaging format?

A: Yes. Both the IPB037N06N3GATMA1 and AOB266L are supplied in D2PAK (TO-263-3) surface mount package configuration, identical to the original IRFS7537PBF. The IPB037N06N3GATMA1 is supplied in Tape & Reel (TR) format, while the AOB266L is also available in Tape & Reel format. Both packaging formats are compatible with standard surface mount assembly processes.

Q: Do the substitute parts meet the same compliance and regulatory requirements?

A: Both substitute parts are ROHS3 compliant and REACH unaffected, matching the original IRFS7537PBF specifications. Both operate across the full temperature range of -55°C to 175°C (TJ). ECCN classification is EAR99 for all three parts, and HTSUS code 8541.29.0095 applies uniformly. Moisture sensitivity level is 1 (Unlimited) for all parts.

Q: How do gate charge differences affect circuit design?

A: The original IRFS7537PBF specifies 210 nC gate charge at 10V. The IPB037N06N3GATMA1 reduces this to 98 nC, and the AOB266L to 80 nC. Lower gate charge enables faster switching transitions and reduces gate drive power requirements. Gate drive circuits designed for the original 210 nC specification will operate with improved performance margins when using substitute parts with lower gate charge values. No circuit redesign is required; existing gate drive circuits remain compatible.

Q: What thermal considerations apply when selecting between substitute parts?

A: The original IRFS7537PBF is rated for 230W maximum power dissipation at case temperature. The IPB037N06N3GATMA1 supports 188W, while the AOB266L supports 268W. Application thermal design must account for the specific power dissipation rating of the selected substitute. Higher current applications benefit from the AOB266L's 268W rating. Lower current applications may use either substitute, with the IPB037N06N3GATMA1 providing adequate thermal performance for circuits operating below 90A continuous current.

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