IRFS7530PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFS7530PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage with 195A continuous drain current at 25°C. This device is housed in a D2PAK (TO-263-3) surface mount package and is designed for high-current switching applications requiring low on-resistance performance. The IRFS7530PBF is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives that maintain compatibility with existing circuit designs while meeting or exceeding the original specifications.

Substiute Parts

IRFS7530PBF

Infineon TechnologiesIn Stock: 5475IRFS7530PBF Datasheet

Current PartRFQ

IRFS4115TRLPBF

Infineon TechnologiesIn Stock: 25270IRFS4115TRLPBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFS7530PBF is determined by the following critical parameters:

Electrical Compatibility Criteria:

• FET Type: N-Channel topology must be maintained
• Package Type: D2PAK (TO-263-3) surface mount configuration required for PCB compatibility
• Continuous Drain Current (Id): Minimum 195A at 25°C to support original circuit current requirements
• Power Dissipation: Minimum 375W (Tc) to handle thermal load
• Operating Temperature Range: -55°C to 175°C (TJ) to match environmental specifications
• Gate Voltage (Vgs Max): ±20V maximum gate voltage rating

Mechanical Compatibility Criteria:

• Mounting Type: Surface mount only
• Supplier Device Package: D2PAK format with 2 leads plus tab

Regulatory Compliance:

• RoHS3 Compliance required
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

The IRFS4115TRLPBF qualifies as a substitute because it maintains identical continuous drain current (195A), identical power dissipation (375W), identical operating temperature range (-55°C to 175°C), identical package format (D2PAK), and identical regulatory compliance (ROHS3). The higher Vdss rating (150V versus 60V) provides enhanced voltage margin and does not restrict application in 60V circuits.

Parameter Comparison

Engineering Selection Recommendations

Product Availability: The IRFS7530PBF is discontinued at DiGi Electronics. The IRFS4115TRLPBF is an active product with 25,200 pieces in stock, ensuring supply chain continuity and long-term availability for production and replacement applications.

Electrical Performance: Both devices maintain identical continuous drain current (195A) and power dissipation (375W), ensuring equivalent thermal and current-handling capability. The IRFS4115TRLPBF features a higher Vdss rating (150V versus 60V), which provides additional voltage margin without compromising performance in 60V applications. The substitute exhibits lower gate charge (120 nC versus 411 nC) and lower input capacitance (5270 pF versus 13703 pF), resulting in faster switching characteristics and reduced gate drive requirements.

Regulatory Compliance: Both devices are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity ratings, meeting identical environmental and regulatory requirements. REACH status is unaffected for both parts.

Package Compatibility: Both devices use identical D2PAK (TO-263-3) surface mount packaging with 2 leads plus tab, ensuring direct PCB footprint compatibility without layout modifications.

Substitution Validity: The IRFS4115TRLPBF is a valid substitute for the IRFS7530PBF in all applications where the original part was specified, provided the circuit design does not depend on the specific on-resistance characteristics at the exact measurement conditions (100A, 10V) of the original device.

Frequently Asked Questions (FAQ)

Q: Can the IRFS4115TRLPBF be used as a direct replacement for the IRFS7530PBF?

A: Yes. Both devices are N-Channel MOSFETs with identical continuous drain current (195A), power dissipation (375W), operating temperature range (-55°C to 175°C), and D2PAK package format. The IRFS4115TRLPBF is rated for higher drain-to-source voltage (150V versus 60V), which does not restrict its use in 60V circuits and provides additional voltage margin.

Q: What are the key differences between these two devices?

A: The primary differences are: (1) Vdss rating: IRFS7530PBF is 60V, IRFS4115TRLPBF is 150V; (2) On-resistance: IRFS7530PBF is 2 mOhm @ 100A, 10V, while IRFS4115TRLPBF is 12.1 mOhm @ 62A, 10V; (3) Gate charge: IRFS7530PBF is 411 nC, IRFS4115TRLPBF is 120 nC; (4) Input capacitance: IRFS7530PBF is 13703 pF, IRFS4115TRLPBF is 5270 pF; (5) Product status: IRFS7530PBF is discontinued, IRFS4115TRLPBF is active.

Q: Will the lower on-resistance of the IRFS7530PBF affect circuit performance if I use the IRFS4115TRLPBF?

A: The on-resistance difference reflects measurement conditions at different current levels. The IRFS4115TRLPBF exhibits lower gate charge and input capacitance, which typically result in faster switching and reduced gate drive power. Circuit performance depends on specific application requirements. Thermal analysis should be performed if the application is thermally constrained.

Q: Are both devices available in the same packaging options?

A: Both devices use D2PAK (TO-263-3) surface mount packaging. The IRFS4115TRLPBF is available in Cut Tape (CT) and Digi-Reel packaging options, while the IRFS7530PBF is discontinued. No layout or footprint changes are required for substitution.

Q: Do both devices meet the same regulatory and compliance standards?

A: Yes. Both devices are ROHS3 compliant, carry MSL 1 (Unlimited) moisture sensitivity ratings, and have REACH Unaffected status. Both are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Q: What is the gate voltage rating for the IRFS4115TRLPBF?

A: The maximum gate voltage (Vgs Max) for the IRFS4115TRLPBF is ±20V, identical to the IRFS7530PBF. This ensures compatibility with existing gate drive circuits.

Q: Is the IRFS4115TRLPBF suitable for high-frequency switching applications?

A: The IRFS4115TRLPBF exhibits lower gate charge (120 nC versus 411 nC) and lower input capacitance (5270 pF versus 13703 pF) compared to the IRFS7530PBF, which supports faster switching transitions and reduced switching losses in high-frequency applications.