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IRFS7434-7PPBF N-Channel MOSFET 40V 240A Equivalent & Substitute Parts
Part Overview
The IRFS7434-7PPBF is an N-Channel MOSFET manufactured by Infineon Technologies, part of the HEXFET® and StrongIRFET™ series. This device is rated for 40V drain-to-source voltage with 240A continuous drain current and 245W power dissipation in a surface mount D2PAK (7-Lead) package. The part is currently discontinued at DiGi Electronics, making equivalent substitutes necessary for ongoing design support and procurement.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 40 | V |
| Continuous Drain Current (Id) @ 25°C | 240 | A |
| Rds On (Max) @ 100A, 10V | 1 | mOhm |
| Power Dissipation (Max) | 245 | W |
| Gate Charge (Qg) @ 10V | 315 | nC |
| Operating Temperature Range | -55 to 150 | °C |
| Package Type | D2PAK (7-Lead) | — |
| Technology | MOSFET (Metal Oxide) | — |
Substitute Part Grouping Explanation
Substitution eligibility for the IRFS7434-7PPBF is determined by the following critical parameters:
Voltage Rating: The substitute must maintain the 40V Vdss specification to ensure safe operation in the same circuit topology.
Current Capability: The substitute must support continuous drain current at or above the application requirement. The IRFS7434-7PPBF delivers 240A; substitutes with lower current ratings may not be suitable for equivalent thermal and electrical performance.
On-Resistance (Rds On): Lower or comparable Rds On values ensure efficient switching and reduced power dissipation. The IRFS7434-7PPBF specifies 1mOhm maximum at 100A, 10V.
Package Compatibility: Surface mount packages with compatible thermal and electrical characteristics allow direct board-level substitution.
Gate Charge (Qg): Lower gate charge reduces driver requirements and switching losses. The IRFS7434-7PPBF specifies 315nC maximum at 10V.
Operating Temperature Range: The substitute must support the application's thermal environment. The IRFS7434-7PPBF operates from -55°C to 150°C.
Compliance & Status: Active product status ensures long-term availability and supply chain stability.
The STH320N4F6-6 meets these substitution criteria with equivalent voltage and current ratings, comparable on-resistance, and active product status.
Parameter Comparison
| Parameter | IRFS7434-7PPBF | STH320N4F6-6 | Unit |
|---|---|---|---|
| Manufacturer | Infineon Technologies | STMicroelectronics | — |
| FET Type | N-Channel | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 40 | 40 | V |
| Continuous Drain Current (Id) @ 25°C | 240 | 200 | A |
| Rds On (Max) @ Vgs 10V | 1 @ 100A | 1.3 @ 80A | mOhm |
| Gate Charge (Qg) @ 10V | 315 | 240 | nC |
| Power Dissipation (Max) | 245 | 300 | W |
| Operating Temperature Range | -55 to 150 | -55 to 175 | °C |
| Mounting Type | Surface Mount | Surface Mount | — |
| Package | D2PAK (7-Lead) | H2PAK-6 | — |
| Product Status | Discontinued at DiGi Electronics | Active | — |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | — |
| Automotive Grade | — | AEC-Q101 | — |
Engineering Selection Recommendations
For Direct Substitution: The STH320N4F6-6 is suitable as a substitute where the application can accommodate a 200A continuous drain current rating. The lower current rating (200A vs. 240A) requires thermal analysis to confirm adequate margin in the target application. The STH320N4F6-6 offers superior power dissipation capability (300W vs. 245W) and extended operating temperature range (-55°C to 175°C vs. -55°C to 150°C), providing additional design margin.
Package Consideration: The STH320N4F6-6 uses H2PAK-6 packaging while the IRFS7434-7PPBF uses D2PAK (7-Lead). Both are surface mount packages with similar thermal performance characteristics, but PCB layout modifications may be required for direct board-level substitution.
Compliance & Availability: The STH320N4F6-6 holds active product status with AEC-Q101 automotive qualification, ensuring long-term supply chain stability and compliance with automotive standards. Both parts are ROHS3 compliant and REACH unaffected.
Current Derating: Applications requiring the full 240A capability of the IRFS7434-7PPBF should evaluate whether the 200A rating of the STH320N4F6-6 meets system requirements. Thermal modeling based on actual operating conditions is necessary to confirm adequate current margin.
Frequently Asked Questions (FAQ)
Q: Can the STH320N4F6-6 directly replace the IRFS7434-7PPBF on the same PCB?
A: Package differences exist between the two parts. The IRFS7434-7PPBF uses D2PAK (7-Lead) while the STH320N4F6-6 uses H2PAK-6. PCB layout modifications are required for physical and electrical compatibility. Thermal pad and lead configurations differ between packages.
Q: What is the significance of the 40A current difference between these parts?
A: The IRFS7434-7PPBF is rated for 240A continuous drain current while the STH320N4F6-6 is rated for 200A. This 40A difference affects maximum system current capacity. Applications operating near the 240A limit require thermal analysis to confirm the STH320N4F6-6 provides adequate margin at the target operating point.
Q: Are both parts suitable for automotive applications?
A: The STH320N4F6-6 carries AEC-Q101 automotive qualification. The IRFS7434-7PPBF does not list automotive qualification in the provided specifications. For automotive designs, the STH320N4F6-6 offers certified compliance.
Q: How do the on-resistance specifications compare?
A: The IRFS7434-7PPBF specifies 1mOhm maximum at 100A, 10V. The STH320N4F6-6 specifies 1.3mOhm maximum at 80A, 10V. The STH320N4F6-6 exhibits slightly higher on-resistance, resulting in marginally higher conduction losses. This difference is typically acceptable in most applications but should be verified through thermal analysis.
Q: What is the impact of the different gate charge specifications?
A: The IRFS7434-7PPBF specifies 315nC gate charge at 10V while the STH320N4F6-6 specifies 240nC. Lower gate charge in the STH320N4F6-6 reduces driver power requirements and switching losses, providing a performance advantage in high-frequency switching applications.
Q: Why is the STH320N4F6-6 rated for higher power dissipation?
A: The STH320N4F6-6 is rated for 300W maximum power dissipation compared to 245W for the IRFS7434-7PPBF. This higher rating reflects improved thermal characteristics of the H2PAK-6 package and the device design, providing additional thermal margin in the application.
Q: Are there any compliance differences between these parts?
A: Both parts are ROHS3 compliant and REACH unaffected. The STH320N4F6-6 additionally carries AEC-Q101 automotive qualification, making it suitable for automotive applications requiring certified component qualification.
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