IRFS654B_FP001 Equivalent & Substitute Parts

Part Overview

The IRFS654B_FP001 is an N-Channel MOSFET manufactured by onsemi, rated for 250V drain-to-source voltage and 21A continuous drain current at 25°C. This device is packaged in a TO-220F-3 through-hole configuration and is designed for general-purpose switching applications requiring moderate power dissipation up to 50W. The IRFS654B_FP001 carries an obsolete product status, making identification of equivalent substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

IRFS654B_FP001

onsemiIn Stock: 967IRFS654B_FP001 Datasheet

Current PartRFQ

FQPF27N25

onsemiIn Stock: 31954FQPF27N25 Datasheet

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STF16NF25

STMicroelectronicsIn Stock: 15666STF16NF25 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute components for the IRFS654B_FP001 are identified based on the following critical electrical and mechanical parameters:

Primary Matching Criteria:

• Drain-to-Source Voltage (Vdss): 250V minimum
• FET Type: N-Channel MOSFET
• Mounting Type: Through Hole
• Package Family: TO-220 series

Secondary Compatibility Factors:

• Continuous Drain Current (Id): Equal to or greater than the application requirement
• On-State Resistance (Rds On): Lower or equivalent values ensure comparable performance
• Gate Threshold Voltage (Vgs(th)): Within compatible range for gate drive circuits
• Operating Temperature Range: -55°C to 150°C minimum
• Power Dissipation Capability: Sufficient for thermal management requirements

The substitute parts listed below meet the primary matching criteria and maintain electrical compatibility within the specified parameter ranges. Differences in secondary parameters reflect design variations between manufacturers and product generations.

Parameter Comparison

Engineering Selection Recommendations

FQPF27N25 (onsemi): This substitute maintains the same TO-220F-3 package configuration and is manufactured by the same supplier as the original part. The FQPF27N25 is classified as an active product with RoHS3 compliance, ensuring long-term availability and regulatory alignment. The continuous drain current rating of 14A is lower than the original 21A specification; however, the on-state resistance of 110mOhm is superior to the original 140mOhm, resulting in lower power dissipation during operation. This device is suitable for applications where the 14A current rating meets design requirements and where improved efficiency is beneficial.

STF16NF25 (STMicroelectronics): This substitute provides an alternative from a different manufacturer with active product status and RoHS3 compliance. The STF16NF25 operates within the same voltage and temperature specifications as the original part. The continuous drain current rating of 14A is lower than the original specification. The on-state resistance of 235mOhm is higher than both the original part and the FQPF27N25, resulting in increased power dissipation. The significantly lower gate charge of 18nC compared to the original 123nC provides faster switching characteristics. This device is suitable for applications where current requirements do not exceed 14A and where reduced switching losses are prioritized over conduction losses.

Both substitute parts are active products with current regulatory compliance, providing design continuity for applications transitioning from the obsolete IRFS654B_FP001.

Frequently Asked Questions (FAQ)

Q: Can the FQPF27N25 directly replace the IRFS654B_FP001 in all applications?

A: The FQPF27N25 shares the same TO-220F-3 package and 250V voltage rating. However, the continuous drain current is rated at 14A compared to the original 21A. Direct substitution is valid only for applications where the maximum required drain current does not exceed 14A. The superior on-state resistance (110mOhm vs. 140mOhm) provides improved efficiency in conduction-limited applications.

Q: What are the package differences between the FQPF27N25 and STF16NF25?

A: The FQPF27N25 uses the TO-220F-3 package, identical to the original IRFS654B_FP001. The STF16NF25 uses the TO-220FP package. Both are through-hole mounted devices with three leads and are mechanically compatible with standard TO-220 mounting hardware. Pin configuration and lead spacing are equivalent for both devices.

Q: How do the on-state resistance values affect circuit performance?

A: On-state resistance (Rds On) directly determines conduction losses when the MOSFET is in the on-state. Lower Rds On values reduce power dissipation and heat generation. The FQPF27N25 (110mOhm) dissipates less power than the original IRFS654B_FP001 (140mOhm) at equivalent current levels. The STF16NF25 (235mOhm) dissipates more power and requires enhanced thermal management in high-current applications.

Q: Are there compliance or regulatory differences between these parts?

A: The FQPF27N25 and STF16NF25 are both RoHS3 compliant and REACH unaffected, meeting current regulatory requirements. The original IRFS654B_FP001 carries an obsolete status, making these active alternatives preferable for new designs and long-term production support.

Q: What is the significance of gate charge differences?

A: Gate charge (Qg) affects switching speed and gate drive circuit requirements. The STF16NF25 has significantly lower gate charge (18nC) compared to the original part (123nC), enabling faster switching transitions and reduced switching losses. The FQPF27N25 (65nC) provides intermediate switching performance. Lower gate charge reduces energy required from the gate drive circuit but does not affect DC operating characteristics.

Q: Can these parts be used interchangeably in existing PCB designs?

A: The FQPF27N25 is a direct pin-compatible replacement for the IRFS654B_FP001 in TO-220F-3 footprints. The STF16NF25 uses the TO-220FP package, which is mechanically compatible but may require verification of specific lead spacing and mounting hole alignment with existing PCB designs. Both devices are suitable for through-hole soldering or screw-terminal mounting applications.