IRFS59N10DPBF N-Channel 100V 59A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFS59N10DPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 59A continuous drain current at 25°C. This device is housed in a D2PAK (TO-263-3) surface mount package and is part of the HEXFET® series. The part is currently discontinued at DiGi Electronics, making equivalent and substitute parts necessary for ongoing design support and production requirements. The device operates across a temperature range of -55°C to 175°C (TJ) and is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	59	A (Tc)
On-State Resistance (Rds On) @ 35.4A, 10V	25	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA	5.5	V
Gate Charge (Qg) @ 10V	114	nC
Input Capacitance (Ciss) @ 25V	2450	pF
Power Dissipation (Max)	200 (Tc)	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IRFS59N10DPBF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 100V
Continuous Drain Current (Id): Must be ≥59A at 25°C
On-State Resistance (Rds On): Must be ≤25mOhm at specified gate voltage
Package Type: Must be D2PAK (TO-263-3) or mechanically compatible surface mount equivalent
Operating Temperature Range: Must support -55°C to 175°C (TJ)
RoHS Compliance: Must be ROHS3 compliant

Secondary Compatibility Parameters:

Gate Charge (Qg): Lower values indicate faster switching
Input Capacitance (Ciss): Affects gate drive requirements
Gate-Source Threshold Voltage (Vgs(th)): Must be compatible with drive circuitry
Maximum Gate-Source Voltage (Vgs Max): Must accommodate drive voltage

The substitute parts listed below meet or exceed the primary criteria. Parts with lower drain current ratings or higher on-state resistance are included only when all other parameters remain compatible, as they represent derating scenarios suitable for specific applications.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Package	Status
IRFS59N10DPBF	Infineon	100	59 (Tc)	25 @ 35.4A, 10V	114 @ 10V	2450 @ 25V	D2PAK	Discontinued
IPB50N10S3L16ATMA1	Infineon	100	50 (Tc)	15.4 @ 50A, 10V	64 @ 10V	4180 @ 25V	TO-263-3	Active
BUK7626-100B,118	Nexperia	100	49 (Tc)	26 @ 25A, 10V	38 @ 10V	2891 @ 25V	D2PAK	Obsolete
BUK9629-100B,118	Nexperia	100	46 (Tc)	27 @ 25A, 10V	33 @ 5V	4360 @ 25V	D2PAK	Active
FDB86102LZ	Fairchild	100	30 (Tc)	24 @ 8.3A, 10V	21 @ 10V	1275 @ 50V	TO-263	Active
HUF75639S3	onsemi	100	56 (Tc)	25 @ 56A, 10V	130 @ 20V	2000 @ 25V	TO-262	Active
IXTA75N10P	IXYS	100	75 (Tc)	25 @ 500mA, 10V	74 @ 10V	2250 @ 25V	TO-263AA	Active
PHB45NQ10T,118	Nexperia	100	47 (Tc)	25 @ 25A, 10V	61 @ 10V	2600 @ 25V	D2PAK	Active
PSMN016-100BS,118	Nexperia	100	57 (Tj)	16 @ 15A, 10V	49 @ 10V	2404 @ 50V	D2PAK	Active
PSMN034-100BS,118	Nexperia	100	32 (Tc)	34.5 @ 15A, 10V	23.8 @ 10V	1201 @ 50V	D2PAK	Active
STB40NF10LT4	STMicroelectronics	100	40 (Tc)	33 @ 20A, 10V	64 @ 4.5V	2300 @ 25V	D2PAK	Active

Engineering Selection Recommendations

Direct Substitutes (Highest Compatibility):

PSMN016-100BS,118 and IXTA75N10P represent the closest functional equivalents to the IRFS59N10DPBF. Both devices maintain 100V Vdss rating, support continuous drain currents within the operational envelope (57A and 75A respectively), and feature comparable on-state resistance characteristics. PSMN016-100BS,118 is available in D2PAK packaging with active product status and full RoHS3 compliance. IXTA75N10P provides higher current capability (75A) in a compatible TO-263AA package, also with active status and RoHS3 compliance.

Secondary Substitutes (Functional Equivalents with Parameter Trade-offs):

BUK9629-100B,118 (Nexperia, Active) and PHB45NQ10T,118 (Nexperia, Active) are suitable alternatives with 46A and 47A continuous drain current ratings respectively. Both maintain D2PAK packaging, 100V Vdss, and RoHS3 compliance. These parts are appropriate for applications where the full 59A capability is not required or where thermal management allows for slightly higher on-state resistance.

Derating Substitutes (Lower Current Capability):

STB40NF10LT4 (STMicroelectronics, Active) and FDB86102LZ (Fairchild, Active) are suitable only for applications requiring reduced drain current (40A and 30A respectively). These parts maintain 100V Vdss and D2PAK or compatible packaging but represent significant current derating and should be selected only when application requirements permit.

Obsolete/Discontinued Parts:

BUK7626-100B,118 (Nexperia, Obsolete) is not recommended for new designs despite meeting electrical parameters. IPB50N10S3L16ATMA1 (Infineon, Active) is available but represents a current reduction to 50A and should be considered only when supply constraints necessitate deviation from primary recommendations.

All recommended substitutes maintain RoHS3 compliance and operate across the required temperature range (-55°C to 175°C TJ). Selection should prioritize active product status parts for long-term supply assurance.

Frequently Asked Questions (FAQ)

Q: Can PSMN016-100BS,118 directly replace IRFS59N10DPBF in all applications?

A: PSMN016-100BS,118 is electrically compatible with IRFS59N10DPBF for applications requiring up to 57A continuous drain current. Both devices share 100V Vdss rating, D2PAK packaging, and RoHS3 compliance. The substitute features lower on-state resistance (16mOhm vs. 25mOhm) and reduced gate charge (49nC vs. 114nC), which may improve switching performance. Thermal design should be verified for applications operating at the upper current limit.

Q: What is the significance of the different package designations (D2PAK, TO-263, TO-262)?

A: D2PAK, TO-263-3, and TO-263AB refer to the same surface mount package with two leads plus a tab. TO-262 (I2PAK) is a through-hole variant with longer leads. HUF75639S3 uses TO-262 packaging and is not suitable for direct PCB replacement in designs requiring surface mount components. All other listed substitutes use surface mount D2PAK or TO-263 variants and are mechanically interchangeable on standard PCB layouts.

Q: Why does IXTA75N10P have a higher drain current rating than the original part?

A: IXTA75N10P is rated for 75A continuous drain current compared to IRFS59N10DPBF's 59A. This higher rating reflects improved die design and thermal characteristics within the same D2PAK package envelope. The device is suitable for applications requiring the original 59A capability and provides additional margin for transient current conditions. On-state resistance remains comparable (25mOhm), ensuring similar power dissipation at rated current.

Q: Are there any gate drive voltage compatibility issues when substituting these parts?

A: Gate-source threshold voltage (Vgs(th)) varies among substitutes. IRFS59N10DPBF specifies 5.5V @ 250µA, while alternatives range from 2V to 4V. Lower threshold voltages (BUK9629-100B,118 at 2V, STB40NF10LT4 at 2.5V) enable faster switching with lower gate drive voltage. Higher threshold voltages (IPB50N10S3L16ATMA1 at 2.4V) require standard 10V gate drive. Verify gate drive circuit compatibility with the selected substitute's Vgs(th) specification.

Q: Which substitute offers the best on-state resistance performance?

A: PSMN016-100BS,118 provides the lowest on-state resistance at 16mOhm @ 15A, 10V, compared to IRFS59N10DPBF's 25mOhm @ 35.4A, 10V. This lower resistance reduces conduction losses and heat generation. IXTA75N10P and HUF75639S3 maintain 25mOhm resistance comparable to the original part. Selection should balance on-state resistance against gate charge and switching frequency requirements for the specific application.

Q: Is RoHS3 compliance maintained across all recommended substitutes?

A: All active and recommended substitute parts listed maintain RoHS3 compliance. Obsolete parts (BUK7626-100B,118) and discontinued parts (IRFS59N10DPBF) may have limited compliance documentation. For new designs and production, select only from active status parts with confirmed RoHS3 compliance certification.

Q: What thermal considerations apply when selecting a substitute?

A: Maximum power dissipation varies significantly among substitutes. IRFS59N10DPBF dissipates 200W (Tc), while IXTA75N10P dissipates 360W (Tc) and PSMN034-100BS,118 dissipates only 86W (Tc). Higher power dissipation capability allows operation at higher currents or ambient temperatures without thermal throttling. PCB thermal design, heatsinking, and application duty cycle must be evaluated against the selected substitute's power dissipation rating.

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