IRFS5620TRLPBF Equivalent & Substitute Parts Reference

Part Overview

The IRFS5620TRLPBF is a surface-mount N-Channel MOSFET manufactured by Infineon Technologies, classified under Transistors, FETs, MOSFETs. It features a drain to source voltage (Vdss) of 200 V and a continuous drain current (Id) of 24 A (Tc), with a maximum power dissipation of 144 W (Tc) in a D2PAK package. The part is designated as obsolete, necessitating the identification of suitable alternative models for continued product support and design continuity.

Key Parameters

Parameter	Main Part (IRFS5620TRLPBF)
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	24A (Tc)
Rds On (Max) @ Id, Vgs	77.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Vgs(th) (Max) @ Id	5V @ 100µA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1710 pF @ 50 V
Power Dissipation (Max)	144W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected

Substitute Part Grouping Explanation

The substitute and equivalent parts for IRFS5620TRLPBF are selected based strictly on matching electrical characteristics and mechanical package. The decisive substitution parameters include FET type, technology, drain to source voltage, continuous drain current, Rds On, gate charge, gate threshold voltage, power dissipation, maximum gate-source voltage, maximum input capacitance, operating temperature, mounting type, and package/case format. Only those alternatives matching these criteria are considered as valid substitutes within the product category.

Parameter Comparison

Parameter	IRFS5620TRLPBF	IPB600N25N3GATMA1	IRFS4620TRLPBF	STB30NF20	STB30NF20L
Category	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V	250 V	200 V	200 V	200 V
Current - Continuous Drain (Id) @ 25°C	24A (Tc)	25A (Tc)	24A (Tc)	30A (Tc)	30A (Tc)
Rds On (Max) @ Id, Vgs	77.5mOhm @ 15A, 10V	60mOhm @ 25A, 10V	77.5mOhm @ 15A, 10V	75mOhm @ 15A, 10V	75mOhm @ 15A, 5V
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V	10V
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V	29 nC @ 10 V	38 nC @ 10 V	38 nC @ 10 V	65 nC @ 10 V
Vgs(th) (Max) @ Id	5V @ 100µA	4V @ 90µA	5V @ 100µA	4V @ 250µA	3V @ 250µA
Vgs (Max)	±20V	±20V	±20V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	1710 pF @ 50 V	2350 pF @ 100 V	1710 pF @ 50 V	1597 pF @ 25 V	1990 pF @ 25 V
Power Dissipation (Max)	144W (Tc)	136W (Tc)	144W (Tc)	125W (Tc)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

The IRFS5620TRLPBF is obsolete. For ongoing production or maintenance, select substitute parts with an active product status and matching compliance profiles, specifically RoHS3 and REACH unaffected status. Ensure identical mounting type and package/case (TO-263-3, D2PAK) for compatibility with existing PCB layouts. All listed substitutes meet Moisture Sensitivity Level (MSL) 1 and required environmental standards based on the provided specifications.

Frequently Asked Questions (FAQ)

Q: What electrical parameters are critical for substituting IRFS5620TRLPBF?
A: Substitute MOSFETs must match FET type, technology, drain to source voltage, continuous drain current, Rds On, gate charge, gate threshold voltage, maximum power dissipation, gate-source voltage rating, input capacitance, and operating temperature range.

Q: Are the substitute parts compatible with the same PCB footprint?
A: All listed alternatives utilize the TO-263-3 (D2PAK, 2 Leads + Tab) and TO-263AB package formats, ensuring mechanical compatibility with IRFS5620TRLPBF.

Q: Which substitutes are suitable for direct replacement in an automated assembly environment?
A: Each substitute part is specified for surface mount (D2PAK), and features Moisture Sensitivity Level (MSL) 1 (Unlimited), suitable for standard surface-mount processes.

Q: Do the substitute parts maintain required compliance and environmental standards?
A: All alternatives are designated as REACH unaffected and meet RoHS3 compliance according to the provided data.

Q: Is there a difference in operating temperature ranges among the substitutes?
A: The majority of substitutes offer -55°C to 175°C (TJ), with the exception of STB30NF20, which supports -55°C to 150°C (TJ).

Q: Should package or grade qualification be considered?
A: For automotive applications, STB30NF20L provides AEC-Q101 qualification as specified in the input. All other mechanical package and mounting criteria match the main part.

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