IRFS5620PBF N-Channel MOSFET 200V 24A Equivalent & Substitute Parts

Part Overview

The IRFS5620PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 200V drain-to-source voltage and 24A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. The part operates across a temperature range of -55°C to 175°C and dissipates up to 144W at the case temperature.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	24	A
Rds On (Max) @ 15A, 10V	77.5	mOhm
Gate Charge (Qg) @ 10V	38	nC
Power Dissipation (Max)	144	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	Surface Mount
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IRFS5620PBF is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain-to-Source Voltage (Vdss) must be equal to or greater than 200V
Continuous Drain Current (Id) must be equal to or greater than 24A
Gate-Source Voltage (Vgs) maximum must be ±20V
Operating temperature range must encompass -55°C to 175°C or be compatible with application requirements

Mechanical Compatibility Requirements:

Package type must be D2PAK (TO-263-3) surface mount configuration
Pin configuration must match the original 2 leads plus tab design
Moisture Sensitivity Level (MSL) must be 1 (Unlimited) or equivalent

Regulatory Compliance:

REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8541.29.0095

The substitute parts listed below meet these criteria with variations in drain current capacity, on-resistance characteristics, and power dissipation that allow direct functional replacement in applications designed for the IRFS5620PBF.

Parameter Comparison

Parameter	IRFS5620PBF	IPB600N25N3GATMA1	STB30NF20	STB40NF20
Manufacturer	Infineon Technologies	Infineon Technologies	STMicroelectronics	STMicroelectronics
Vdss (V)	200	250	200	200
Id @ 25°C (A)	24	25	30	40
Rds On (Max) @ 10V (mOhm)	77.5 @ 15A	60 @ 25A	75 @ 15A	45 @ 20A
Gate Charge (Qg) @ 10V (nC)	38	29	38	75
Power Dissipation (Max) (W)	144	136	125	160
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 150	-55 to 150
Package	D2PAK (TO-263-3)	PG-TO263-3	D2PAK (TO-263-3)	D2PAK (TO-263-3)
Product Status	Obsolete	Active	Active	Active
Vgs (Max) (±V)	20	20	20	20
Moisture Sensitivity (MSL)	1	1	1	1
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

IPB600N25N3GATMA1 (Infineon Technologies): This substitute offers the closest electrical match to the IRFS5620PBF with 250V Vdss rating, 25A continuous drain current, and identical operating temperature range (-55°C to 175°C). The part features improved on-resistance (60mOhm at 25A versus 77.5mOhm at 15A) and lower gate charge (29nC versus 38nC), resulting in reduced switching losses. Product status is Active with RoHS3 compliance. The PG-TO263-3 package is mechanically compatible with D2PAK footprints. This part is recommended for direct replacement in applications where the higher voltage rating (250V versus 200V) provides additional design margin.

STB30NF20 (STMicroelectronics): This substitute maintains the 200V Vdss rating and provides 30A continuous drain current, exceeding the original 24A specification. On-resistance is comparable at 75mOhm at 15A. Gate charge matches at 38nC. Operating temperature range is -55°C to 150°C, which is 25°C lower than the original part. Product status is Active with RoHS3 compliance. This part is suitable for applications where the lower maximum junction temperature is acceptable and higher current capacity is beneficial.

STB40NF20 (STMicroelectronics): This substitute maintains the 200V Vdss rating and provides 40A continuous drain current with significantly improved on-resistance (45mOhm at 20A). Power dissipation capability is higher at 160W. Gate charge is elevated at 75nC, indicating higher switching losses. Operating temperature range is -55°C to 150°C. Product status is Active with RoHS3 compliance. This part is suitable for applications requiring higher current capacity and lower conduction losses, with acceptance of increased switching losses and lower maximum junction temperature.

All substitute parts maintain D2PAK packaging, MSL 1 rating, REACH Unaffected status, and EAR99 ECCN classification, ensuring regulatory and supply chain compatibility.

Frequently Asked Questions (FAQ)

Q: Can the IPB600N25N3GATMA1 be used as a direct replacement for the IRFS5620PBF?

A: Yes. The IPB600N25N3GATMA1 meets all electrical and mechanical compatibility criteria. The 250V Vdss rating exceeds the original 200V specification, providing additional voltage margin. Both parts operate across -55°C to 175°C and use compatible D2PAK packaging. The improved electrical characteristics (lower Rds On and gate charge) make this the preferred substitute.

Q: What is the difference between the STB30NF20 and STB40NF20 substitutes?

A: Both parts maintain 200V Vdss matching the original specification. The STB30NF20 provides 30A continuous current with 75mOhm on-resistance. The STB40NF20 provides 40A continuous current with 45mOhm on-resistance, offering lower conduction losses but higher gate charge (75nC versus 38nC), resulting in increased switching losses. Selection depends on whether the application prioritizes conduction efficiency or current capacity.

Q: Are there temperature limitations when substituting with STMicroelectronics parts?

A: Yes. Both STB30NF20 and STB40NF20 have a maximum operating temperature of 150°C, compared to 175°C for the original IRFS5620PBF and IPB600N25N3GATMA1. Applications requiring operation above 150°C junction temperature must use the IPB600N25N3GATMA1 or verify that the lower temperature rating is acceptable for the specific thermal design.

Q: Do all substitute parts use the same D2PAK package?

A: Yes. All substitute parts use D2PAK (TO-263-3) surface mount packaging with 2 leads plus tab configuration. The IPB600N25N3GATMA1 uses the designation PG-TO263-3, which is mechanically and electrically equivalent to the standard D2PAK footprint. PCB layout modifications are not required.

Q: What is the impact of different gate charge values on circuit design?

A: Gate charge (Qg) affects switching speed and driver power requirements. The IPB600N25N3GATMA1 has lower gate charge (29nC) than the original (38nC), reducing driver stress. The STB40NF20 has higher gate charge (75nC), requiring more driver current and potentially increasing switching losses. Driver circuits must be verified to supply adequate gate current for the selected substitute.

Q: Are all substitute parts RoHS compliant?

A: Yes. The IPB600N25N3GATMA1 is RoHS3 compliant. Both STB30NF20 and STB40NF20 are RoHS3 compliant. All parts maintain REACH Unaffected status and EAR99 ECCN classification, ensuring regulatory compliance for industrial and commercial applications.

Q: Can the IRFS5620PBF be used interchangeably with these substitutes in existing designs?

A: The substitute parts can replace the IRFS5620PBF in existing designs provided that the electrical and thermal specifications are verified. The higher Vdss rating of the IPB600N25N3GATMA1 (250V) is backward compatible. The STB30NF20 and STB40NF20 maintain 200V Vdss but have lower maximum junction temperatures. Thermal analysis is required to confirm that the lower temperature rating does not exceed application limits.

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