IRFS5615TRLPBF N-Channel 150V 33A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFS5615TRLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 150V drain-to-source voltage with 33A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete product status. Due to its obsolete classification, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production runs and field replacements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	150	V
Continuous Drain Current (Id) @ 25°C	33	A (Tc)
On-Resistance (Rds On) @ 21A, 10V	42	mOhm
Gate Threshold Voltage (Vgs(th)) @ 100µA	5	V
Gate Charge (Qg) @ 10V	40	nC
Power Dissipation (Max)	144	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount

Substitute Part Grouping Explanation

Substitute parts for the IRFS5615TRLPBF are classified based on strict electrical and mechanical parameter matching within the N-Channel MOSFET category. The substitution logic is determined by the following critical parameters:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 150V minimum
Continuous Drain Current (Id): 33A or greater
On-Resistance (Rds On): 42mOhm or lower at specified gate voltage
Package Type: D2PAK (TO-263-3) surface mount configuration
Operating Temperature Range: -55°C to 175°C or equivalent
RoHS3 Compliance and MSL Level 1

Substitution Categories:

Parametric Equivalent: Parts with identical electrical specifications and package type, suitable for direct replacement without circuit modification.

Direct Manufacturer Equivalent: Parts with enhanced or equivalent performance characteristics that meet or exceed the original specifications, available from alternative manufacturers.

MFR Recommended Equivalent: Parts recommended by manufacturers as functional alternatives, with minor parameter variations within acceptable engineering tolerances.

Parameter Comparison

Parameter	IRFS5615TRLPBF	IRFS4615TRLPBF	PHB45NQ15T,118	AOB254L	STB75NF20
Manufacturer	Infineon	Infineon	Nexperia	Alpha & Omega	STMicroelectronics
Vdss (V)	150	150	150	150	200
Id @ 25°C (A)	33	33	45.1	32	75
Rds On @ 10V (mOhm)	42 @ 21A	42 @ 21A	42 @ 20A	46 @ 20A	34 @ 37A
Vgs(th) (V)	5 @ 100µA	5 @ 100µA	4 @ 1mA	2.7 @ 250µA	4 @ 250µA
Gate Charge Qg (nC)	40 @ 10V	40 @ 10V	32 @ 10V	40 @ 10V	84 @ 10V
Power Dissipation (W)	144	144	230	125	190
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-50 to 150
Package	D2PAK	D2PAK	D2PAK	TO-263	D2PAK
Product Status	Obsolete	Active	Active	Active	Active
RoHS3 Compliance	Yes	Yes	Yes	Yes	Yes

Engineering Selection Recommendations

IRFS4615TRLPBF (Infineon Technologies) - Parametric Equivalent

The IRFS4615TRLPBF is the primary parametric equivalent for the IRFS5615TRLPBF. Both devices share identical electrical specifications: 150V Vdss, 33A continuous drain current, 42mOhm Rds On, and 144W power dissipation. The IRFS4615TRLPBF maintains active product status with ROHS3 compliance and MSL Level 1 rating. This part is available in Cut Tape and Digi-Reel packaging with 1588 units in stock, providing immediate availability for production requirements.

PHB45NQ15T,118 (Nexperia USA Inc.) - Direct Manufacturer Equivalent

The PHB45NQ15T,118 is a direct manufacturer equivalent offering enhanced performance characteristics. It maintains the 150V Vdss rating while providing 45.1A continuous drain current, exceeding the original 33A specification. The Rds On remains at 42mOhm at comparable gate voltage conditions. Gate charge is reduced to 32nC, and power dissipation capability increases to 230W. This part is manufactured using TrenchMOS™ technology and carries active product status with ROHS3 compliance. Inventory availability is 16517 units in Tape & Reel packaging.

AOB254L (Alpha & Omega Semiconductor Inc.) - MFR Recommended Equivalent

The AOB254L provides functional equivalence with minor parameter variations. It maintains 150V Vdss and delivers 32A continuous drain current at case temperature, meeting the minimum current requirement. Rds On is specified at 46mOhm, representing a 9.5% increase from the original specification. Gate threshold voltage is lower at 2.7V, and gate charge remains at 40nC. Power dissipation is rated at 125W (Tc). This part is active with ROHS3 compliance and 10165 units available in Tape & Reel packaging.

STB75NF20 (STMicroelectronics) - MFR Recommended Equivalent

The STB75NF20 is a higher-voltage alternative rated for 200V Vdss with significantly enhanced current capability at 75A continuous drain current. Rds On improves to 34mOhm, and power dissipation increases to 190W. This part is suitable for applications requiring higher voltage headroom or increased current capacity. Operating temperature range is -50°C to 150°C, representing a 25°C reduction at the lower temperature limit. STripFET™ technology is employed, and the part carries active status with ROHS3 compliance. Inventory includes 1373 units in Cut Tape and Digi-Reel packaging.

Selection Basis:

All substitute parts maintain D2PAK surface mount packaging compatibility, RoHS3 compliance, and MSL Level 1 moisture sensitivity rating. The IRFS4615TRLPBF is recommended as the primary replacement due to identical electrical specifications and active product status. Alternative selections should be based on specific application requirements regarding current capacity, voltage margin, and thermal performance.

Frequently Asked Questions (FAQ)

Q1: Can the IRFS4615TRLPBF be used as a direct replacement for the IRFS5615TRLPBF?

A: Yes. The IRFS4615TRLPBF is a parametric equivalent with identical electrical specifications: 150V Vdss, 33A continuous drain current, 42mOhm Rds On, and 144W power dissipation. Both devices use D2PAK packaging and maintain the same operating temperature range. No circuit modifications are required.

Q2: What is the primary difference between the IRFS5615TRLPBF and PHB45NQ15T,118?

A: The PHB45NQ15T,118 provides enhanced current capability at 45.1A compared to 33A, increased power dissipation at 230W versus 144W, and reduced gate charge at 32nC versus 40nC. Both maintain 150V Vdss and 42mOhm Rds On. The PHB45NQ15T,118 is suitable for applications requiring higher current capacity or improved thermal performance.

Q3: Is the AOB254L suitable for direct replacement in all applications?

A: The AOB254L meets minimum electrical requirements with 150V Vdss and 32A continuous drain current. However, Rds On is specified at 46mOhm, representing a 9.5% increase from the original 42mOhm specification. Applications sensitive to on-resistance or power dissipation should evaluate thermal impact. Gate threshold voltage is lower at 2.7V, which may affect gate drive circuit timing.

Q4: Why is the STB75NF20 rated for 200V instead of 150V?

A: The STB75NF20 is a higher-voltage alternative designed for applications requiring increased voltage margin or operation in higher-voltage circuits. The 200V Vdss rating provides 33% additional voltage headroom. This part is suitable for applications where the original 150V specification is insufficient, but circuit design must accommodate the higher voltage rating.

Q5: Are all substitute parts available in the same D2PAK package?

A: Yes. All substitute parts listed are available in D2PAK (TO-263-3) surface mount packaging, ensuring mechanical and thermal interface compatibility. Pin configuration remains identical across all alternatives.

Q6: What is the significance of product status (Active vs. Obsolete)?

A: The IRFS5615TRLPBF is classified as obsolete, indicating discontinued manufacturing and limited long-term availability. Active product status for substitute parts ensures continued manufacturing, supply chain availability, and manufacturer support. Active parts are recommended for new designs and production runs.

Q7: Do all substitute parts meet RoHS3 compliance?

A: Yes. All substitute parts listed carry RoHS3 compliance certification and MSL Level 1 (Unlimited) moisture sensitivity rating, matching the original IRFS5615TRLPBF specifications. These certifications ensure regulatory compliance and environmental standards adherence.

Q8: What packaging options are available for substitute parts?

A: IRFS4615TRLPBF is available in Cut Tape (CT) and Digi-Reel® packaging. PHB45NQ15T,118 and AOB254L are supplied in Tape & Reel (TR) packaging. STB75NF20 is available in Cut Tape (CT) and Digi-Reel® packaging. All packaging formats are compatible with standard automated assembly equipment.

Q9: How does gate charge affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IRFS5615TRLPBF and IRFS4615TRLPBF specify 40nC at 10V. The PHB45NQ15T,118 reduces this to 32nC, enabling faster switching and reduced gate drive power. The STB75NF20 increases gate charge to 84nC, requiring higher gate drive capability. Gate drive circuit design must accommodate these variations.

Q10: What thermal considerations apply when selecting a substitute part?

A: Power dissipation ratings vary among substitutes: IRFS5615TRLPBF and IRFS4615TRLPBF at 144W, PHB45NQ15T,118 at 230W, AOB254L at 125W, and STB75NF20 at 190W. Applications operating at high current or high frequency should select parts with higher power dissipation ratings. Thermal management design must account for the selected part's power dissipation capability and operating temperature range.

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