IRFS5615PBF N-Channel MOSFET 150V 33A Equivalent & Substitute Parts

Part Overview

The IRFS5615PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 150V drain-to-source voltage with 33A continuous drain current at 25°C. This device is packaged in D2PAK (TO-263-3) surface mount configuration and is designed for high-current switching applications. The part is currently classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. Substitute parts must maintain compatibility with the D2PAK package and preserve critical electrical parameters within acceptable operating ranges.

Substiute Parts

IRFS5615PBF

Infineon TechnologiesIn Stock: 3131IRFS5615PBF Datasheet

Current PartRFQ

AOB254L

Alpha & Omega Semiconductor Inc.In Stock: 10209AOB254L Datasheet

MFR RecommendedRFQ

PHB45NQ15T,118

Nexperia USA Inc.In Stock: 16590PHB45NQ15T,118 Datasheet

MFR RecommendedRFQ

STB75NF20

STMicroelectronicsIn Stock: 1438STB75NF20 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFS5615PBF is determined by the following critical parameters:

Primary Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): Must be equal to or greater than 150V
• Package Type: Must be D2PAK (TO-263-3) surface mount configuration
• Continuous Drain Current (Id): Must support minimum 33A at 25°C (Tc rating)
• Gate Drive Voltage: Standardized at 10V for this device class
• Operating Temperature Range: Must encompass -55°C to 175°C minimum

Secondary Compatibility Factors:

• On-State Resistance (Rds On): Lower values indicate improved performance; values within ±20% of 42mOhm are acceptable
• Gate Charge (Qg): Lower values reduce switching losses; values up to 84nC are acceptable
• Power Dissipation: Must support minimum 144W (Tc) rating

The three substitute parts listed below meet these criteria with varying performance characteristics. Each substitute maintains the D2PAK package and 150V minimum voltage rating while offering different current and power dissipation capabilities.

Parameter Comparison

Engineering Selection Recommendations

AOB254L (Alpha & Omega Semiconductor Inc.)

The AOB254L is an active product offering near-equivalent performance to the IRFS5615PBF. It maintains the 150V Vdss rating and delivers 32A continuous drain current, which is within 3% of the original specification. The Rds On value of 46mOhm at 20A, 10V represents a 9.5% increase in on-state resistance compared to the main part. Gate charge remains identical at 40nC. This substitute is ROHS3 compliant and carries unlimited moisture sensitivity rating (MSL 1). The AOB254L is suitable for direct replacement in applications where the slightly higher on-state resistance is acceptable and power dissipation margins exist.

PHB45NQ15T,118 (Nexperia USA Inc.)

The PHB45NQ15T,118 is an active product from Nexperia's TrenchMOS™ series, offering superior current capability at 45.1A continuous drain current, representing a 36.7% increase over the main part. The device maintains 150V Vdss and matches the 42mOhm Rds On specification at 20A, 10V. Gate charge is reduced to 32nC, providing lower switching losses. Power dissipation capability is significantly higher at 230W (Tc). This substitute is ROHS3 compliant with MSL 1 rating. The PHB45NQ15T,118 is recommended for applications requiring higher current capacity or improved thermal performance while maintaining identical voltage and resistance characteristics.

STB75NF20 (STMicroelectronics)

The STB75NF20 is an active product from STMicroelectronics' STripFET™ series with elevated voltage rating of 200V Vdss, providing 33% voltage margin above the original specification. Continuous drain current is rated at 75A (Tc), representing 127% increase over the main part. On-state resistance is reduced to 34mOhm at 37A, 10V, offering 19% lower resistance. Gate charge is elevated to 84nC, indicating higher switching losses. Power dissipation is rated at 190W (Tc). Operating temperature range is -50°C to 150°C, which does not extend to the full -55°C lower limit of the original part. This substitute is ROHS3 compliant with MSL 1 rating. The STB75NF20 is suitable for applications where higher voltage and current ratings provide design margin, provided the reduced lower temperature limit is acceptable.

Frequently Asked Questions (FAQ)

Q: Can the AOB254L be used as a direct pin-for-pin replacement for the IRFS5615PBF?

A: Yes. Both devices use the D2PAK (TO-263-3) package with identical pinout. The AOB254L maintains the same gate drive voltage (10V) and operating temperature range (-55°C to 175°C). Electrical parameters are closely matched, with the primary difference being a 9.5% increase in on-state resistance. Direct substitution is possible provided thermal design accommodates the slightly higher resistance.

Q: What is the primary advantage of the PHB45NQ15T,118 over the IRFS5615PBF?

A: The PHB45NQ15T,118 offers 36.7% higher continuous drain current (45.1A vs. 33A) and 59.7% higher power dissipation capability (230W vs. 144W). Gate charge is reduced by 20%, resulting in lower switching losses. These characteristics make it suitable for applications requiring higher current handling or improved thermal performance.

Q: Why does the STB75NF20 have a higher Vdss rating (200V vs. 150V)?

A: The STB75NF20 is designed for applications requiring higher voltage margins. The 200V rating provides 33% additional voltage headroom above the 150V specification of the IRFS5615PBF. This higher rating does not prevent use in 150V applications; it simply indicates the device can withstand higher transient voltages. However, the reduced lower operating temperature limit (-50°C vs. -55°C) must be verified for compatibility with the target application.

Q: Are all three substitute parts ROHS3 compliant?

A: Yes. The AOB254L, PHB45NQ15T,118, and STB75NF20 are all ROHS3 compliant. The original IRFS5615PBF does not specify RoHS status due to its obsolete classification. All substitute parts carry MSL 1 (unlimited) moisture sensitivity rating.

Q: What is the significance of gate charge (Qg) differences among these parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. The IRFS5615PBF and AOB254L both specify 40nC, while the PHB45NQ15T,118 specifies 32nC (20% lower) and the STB75NF20 specifies 84nC (110% higher). Lower gate charge reduces switching losses and allows faster switching speeds. Higher gate charge increases switching losses but may provide better noise immunity in certain circuit topologies.

Q: Can the STB75NF20 be used in applications requiring operation down to -55°C?

A: No. The STB75NF20 operating temperature range is -50°C to 150°C, which does not extend to the -55°C minimum of the IRFS5615PBF. If the application requires operation at -55°C, the STB75NF20 is not suitable. The AOB254L and PHB45NQ15T,118 both support the full -55°C to 175°C range.

Q: How do on-state resistance values affect circuit performance?

A: On-state resistance (Rds On) directly determines conduction losses and heat generation. Lower Rds On values reduce power dissipation and heat output. The IRFS5615PBF specifies 42mOhm at 21A, 10V. The AOB254L is 9.5% higher at 46mOhm, while the PHB45NQ15T,118 matches at 42mOhm, and the STB75NF20 is 19% lower at 34mOhm. Selection depends on thermal budget and efficiency requirements.

Q: What inventory status should be considered when selecting a substitute?

A: The IRFS5615PBF has 3110 pieces in stock but is obsolete. The AOB254L has 10165 pieces available, the PHB45NQ15T,118 has 16517 pieces available, and the STB75NF20 has 1373 pieces available. For long-term production continuity, active products with higher inventory (AOB254L and PHB45NQ15T,118) are preferred over the obsolete main part.