IRFS52N15DPBF Equivalent & Substitute Parts

Part Overview

The IRFS52N15DPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 150V drain-to-source voltage with 51A continuous drain current in a surface mount D2PAK package. This device is part of the HEXFET® series and is currently discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

The part operates across a temperature range of -55°C to 175°C and is RoHS3 compliant with unlimited moisture sensitivity rating. Discontinuation status requires engineers to evaluate substitute components that maintain electrical and mechanical compatibility within the application's design parameters.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	150	V
Continuous Drain Current (Id) @ 25°C	51	A (Tc)
Rds On (Max) @ Id, Vgs	32	mOhm @ 36A, 10V
Gate Charge (Qg) (Max) @ Vgs	89	nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2770	pF @ 25V
Power Dissipation (Max)	3.8 / 230	W (Ta) / W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
Vgs (Max)	±30	V
Vgs(th) (Max) @ Id	5	V @ 250µA

Substitute Part Grouping Explanation

Substitution of the IRFS52N15DPBF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 150V
Continuous Drain Current (Id): Must equal or exceed 51A at 25°C
On-State Resistance (Rds On): Must not significantly exceed 32mOhm to maintain thermal performance
Package Type: Must be D2PAK (TO-263-3) surface mount configuration
FET Type: N-Channel MOSFET technology
Gate Charge (Qg): Should remain within acceptable switching loss parameters
Operating Temperature Range: Must support -55°C to 175°C or equivalent industrial range

Secondary Compatibility Parameters:

Input Capacitance (Ciss): Affects gate drive circuit design
Maximum Gate Voltage (Vgs): Must accommodate existing gate drive voltage levels
Threshold Voltage (Vgs(th)): Should align with logic-level or standard drive requirements
RoHS and REACH Compliance: Must maintain regulatory compliance status

The STB75NF20 from STMicroelectronics meets these criteria with enhanced voltage rating (200V) and higher current capability (75A), making it a direct functional substitute while providing design margin for voltage and current stress.

Parameter Comparison

Parameter	IRFS52N15DPBF (Main)	STB75NF20 (Substitute)	Unit
Manufacturer	Infineon Technologies	STMicroelectronics	—
Drain to Source Voltage (Vdss)	150	200	V
Continuous Drain Current (Id) @ 25°C	51	75	A (Tc)
Rds On (Max) @ Id, Vgs	32 @ 36A, 10V	34 @ 37A, 10V	mOhm
Gate Charge (Qg) (Max) @ Vgs	89 @ 10V	84 @ 10V	nC
Input Capacitance (Ciss) (Max) @ Vds	2770 @ 25V	3260 @ 25V	pF
Power Dissipation (Max)	230 (Tc)	190 (Tc)	W
Operating Temperature Range	-55 to 175	-50 to 150	°C (TJ)
Vgs (Max)	±30	±20	V
Vgs(th) (Max) @ Id	5 @ 250µA	4 @ 250µA	V
Package Type	D2PAK (TO-263-3)	D2PAK (TO-263-3)	Surface Mount
Product Status	Discontinued	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
MSL Rating	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

STB75NF20 as Primary Substitute:

The STB75NF20 is an active product from STMicroelectronics and serves as the direct functional equivalent for the discontinued IRFS52N15DPBF. Selection is based on the following engineering factors:

Electrical Compatibility:

Vdss rating of 200V exceeds the 150V requirement, providing 33% design margin
Id rating of 75A exceeds the 51A requirement, providing 47% design margin
Rds On of 34mOhm at 37A, 10V is within 6% of the original 32mOhm specification
Gate charge of 84nC is 5.6% lower, reducing switching losses
Both devices operate with 10V gate drive voltage

Mechanical Compatibility:

Identical D2PAK (TO-263-3) surface mount package
Pin configuration and PCB footprint are directly compatible
No layout modifications required

Regulatory and Supply Status:

Active product status ensures long-term availability
RoHS3 and REACH compliance maintained
Unlimited MSL rating (Level 1) matches original specification

Temperature Consideration:

STB75NF20 operates to 150°C junction temperature versus 175°C for IRFS52N15DPBF
Applications requiring operation above 150°C require thermal analysis or alternative selection

Gate Voltage Constraint:

STB75NF20 maximum Vgs is ±20V versus ±30V for IRFS52N15DPBF
Gate drive circuits must not exceed ±20V to ensure device reliability

Frequently Asked Questions (FAQ)

Q: Can the STB75NF20 directly replace the IRFS52N15DPBF without PCB modifications?

A: Yes. Both devices use identical D2PAK (TO-263-3) surface mount packages with the same pin configuration and footprint. No PCB layout changes are required for mechanical and electrical connection.

Q: What are the key electrical differences between these devices?

A: The STB75NF20 provides higher voltage rating (200V vs. 150V) and higher current capability (75A vs. 51A). On-state resistance is comparable (34mOhm vs. 32mOhm). Gate charge is slightly lower (84nC vs. 89nC), reducing switching losses. Maximum gate voltage is lower (±20V vs. ±30V).

Q: Is the STB75NF20 suitable for applications requiring operation above 150°C?

A: The STB75NF20 is rated to 150°C junction temperature, compared to 175°C for the IRFS52N15DPBF. Applications requiring sustained operation above 150°C must evaluate thermal management or select alternative devices with higher temperature ratings.

Q: Does the higher Vdss rating of the STB75NF20 affect circuit performance?

A: Higher Vdss rating provides design margin and does not negatively affect performance in circuits designed for 150V operation. The device operates safely at lower voltages with improved reliability margin.

Q: What gate drive voltage should be used with the STB75NF20?

A: The STB75NF20 is specified for 10V gate drive voltage, matching the original IRFS52N15DPBF. Gate drive circuits must not exceed ±20V maximum Vgs to ensure device reliability. Existing 10V gate drive circuits are fully compatible.

Q: Are there supply chain advantages to using the STB75NF20?

A: Yes. The STB75NF20 is an active product from STMicroelectronics with confirmed inventory availability, whereas the IRFS52N15DPBF is discontinued. Active product status ensures long-term procurement availability and supply continuity.

Q: How do the input capacitance values affect gate drive circuit design?

A: The STB75NF20 has slightly higher input capacitance (3260pF vs. 2770pF at 25V). Gate drive circuits with current-limited outputs may experience marginally longer switching times. High-current gate drivers are unaffected. Existing gate drive circuits designed for the IRFS52N15DPBF remain compatible.

Q: What compliance certifications apply to the STB75NF20?

A: The STB75NF20 is RoHS3 compliant and REACH unaffected, matching the regulatory status of the IRFS52N15DPBF. Both devices carry unlimited moisture sensitivity rating (MSL Level 1).

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