IRFS4710PBF Equivalent & Substitute Parts Reference Guide

Part Overview

The IRFS4710PBF is an N-Channel MOSFET from Infineon Technologies, designed for high current and voltage switching applications. It is rated for a Drain-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 75A when mounted to a heatsink (Tc). The device is housed in a surface mount D2PAK (TO-263-3, TO-263AB) package and features a maximum Rds(on) of 14mOhm at 45A, 10V. The part is currently listed as obsolete. For ongoing applications requiring identical or similar electrical and mechanical characteristics, finding suitable substitute MOSFETs is necessary to maintain design integrity and ensure continued production.

Key Parameters

Parameter	Value (IRFS4710PBF)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Rds On (Max) @ Id, Vgs	14mOhm @ 45A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	170 nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6160 pF @ 25V
Power Dissipation (Max)	3.8W (Ta), 200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
Part Status	Obsolete

Substitute Part Grouping Explanation

Substitution of N-Channel MOSFETs in the same category is determined strictly by matching the following parameters:

Drain to Source Voltage (Vdss) of 100 V
Continuous Drain Current (Id) at 25°C (Tc) close to or above 75A
Maximum Rds(on) at comparable current and gate voltage
Gate Threshold Voltage (Vgs(th)) compatibility
Maximum Gate Charge (Qg)
Maximum Gate-Source Voltage (Vgs)
Input Capacitance (Ciss)
Maximum Power Dissipation (Tc)
Matching package/case: TO-263-3, D2PAK (D2PAK (2 Leads + Tab), TO-263AB)
Mechanical compatibility: Surface Mount, D2PAK
Compliance (RoHS/REACH), MSL rating, and ECCN status

Substitute devices are selected only when all these parameters are compatible with IRFS4710PBF and the mounting requirements are met.

Parameter Comparison

Parameter	IRFS4710PBF	FDB120N10	HUF75645S3ST	PSMN013-100BS,118	PSMN015-100B,118	STB80NF10T4	STB120NF10T4
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vdss	100 V	100 V	100 V	100 V	100 V	100 V	100 V
Id (Tc)	75A	74A	75A	68A	75A	80A	110A
Rds(on) (Max) @ Id, Vgs	14mOhm @ 45A, 10V	12mOhm @ 74A, 10V	14mOhm @ 75A, 10V	13.9mOhm @ 15A, 10V	15mOhm @ 25A, 10V	15mOhm @ 40A, 10V	10.5mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA	4.5V @ 250µA	4V @ 250µA	4V @ 1mA	4V @ 1mA	4V @ 250µA	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	170 nC @ 10V	86 nC @ 10V	238 nC @ 20V	59 nC @ 10V	90 nC @ 10V	182 nC @ 10V	233 nC @ 10V
Vgs (Max)	±20V	±20V	±20V	±20V	±20V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	6160 pF @ 25V	5605 pF @ 25V	3790 pF @ 25V	3195 pF @ 50V	4900 pF @ 25V	5500 pF @ 25V	5200 pF @ 25V
Power Dissipation (Max) (Tc)	200W	170W	310W	170W	300W	300W	312W
Operating Temperature (TJ)	-55°C ~ 175°C	-55°C ~ 175°C	-55°C ~ 175°C	-55°C ~ 175°C	-55°C ~ 175°C	-55°C ~ 175°C	-55°C ~ 175°C
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	D2PAK	TO-263 (D2PAK)	TO-263 (D2PAK)	D2PAK	D2PAK	D2PAK	D2PAK
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected
ECCN	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Part Status	Obsolete	Active	Obsolete	Active	Active	Active	Active

Engineering Selection Recommendations

Selection of substitute N-Channel MOSFETs for IRFS4710PBF should be performed strictly according to the following criteria:

The substitute must match all provided electrical parameters, mechanical package requirements, and mounting method.
Priority should be given to active parts that are RoHS compliant, have a Moisture Sensitivity Level (MSL) of 1, and indicate REACH unaffected status as required for ongoing production.
The substitute must share identical ECCN and HTSUS codes for export compliance and classification consistency.
All recommended substitutes above comply with these criteria and are suitable for direct replacement under provided parameters.

Frequently Asked Questions (FAQ)

Q1: What are the critical electrical parameters for substituting IRFS4710PBF?
A1: Important parameters include Drain-Source Voltage (Vdss), Continuous Drain Current (Id) at Tc, maximum Rds(on), gate threshold voltage (Vgs(th)), maximum gate charge (Qg), and input capacitance (Ciss).

Q2: Why is mechanical compatibility relevant in choosing a substitute?
A2: Mechanical compatibility ensures that the substitute MOSFET fits in the same position on the PCB with identical footprint and pinout, specifically D2PAK (TO-263-3, TO-263AB) surface mount types.

Q3: What package requirements must be met for substitution?
A3: The substitute must be offered in the same TO-263-3, D2PAK (2 Leads + Tab), or TO-263AB package, and support surface-mount installation.

Q4: Are substitutes required to have identical compliance statuses?
A4: Yes, compliance status such as RoHS, REACH, MSL rating, and ECCN must align to ensure alignment with regulatory and handling needs.

Q5: Is it sufficient to match only the electrical ratings for substitution?
A5: No, substitutes must match both the electrical specifications and mechanical/package parameters. All other listed criteria must be satisfied.

Q6: Can obsolete substitute parts be used for new designs?
A6: Component status should be reviewed; active parts are preferred for ongoing and new designs, while obsolete parts may only be used for service and repair of existing products.

Q7: Is gate charge (Qg) and input capacitance (Ciss) a substitution criterion?
A7: Yes, these factors affect switching performance and must be matched based on the application’s requirements as provided.

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