IRFS4610TRRPBF N-Channel 100V 73A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFS4610TRRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 73A continuous drain current at 25°C. The device is housed in a D2PAK (TO-263-3) surface mount package and delivers 190W maximum power dissipation. This part operates across the temperature range of -55°C to 175°C (TJ).

The IRFS4610TRRPBF carries an Obsolete product status. Equivalent and substitute N-Channel MOSFETs are necessary to support ongoing production requirements, maintenance applications, and design continuity where this legacy component is specified.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	73	A (Tc)
On-State Resistance (Rds On) @ 44A, 10V	14	mOhm
Gate Threshold Voltage (Vgs(th)) @ 100µA	4	V
Gate Charge (Qg) @ 10V	140	nC
Power Dissipation (Max)	190	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
Moisture Sensitivity Level	1 (Unlimited)	MSL

Substitute Part Grouping Explanation

Substitution of the IRFS4610TRRPBF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 100V minimum
Continuous Drain Current (Id): 73A or greater at 25°C
On-State Resistance (Rds On): Comparable or lower at rated conditions
Gate Threshold Voltage (Vgs(th)): Within ±20V gate supply range
Package Type: D2PAK (TO-263-3) surface mount configuration
Operating Temperature Range: -55°C to 175°C (TJ) minimum
Mounting Type: Surface Mount

Substitution Categories:

Category 1: Parametric Equivalents (Identical Electrical Performance) Parts with matching Vdss (100V), Id (73A), and Rds On characteristics. These devices provide direct functional replacement with equivalent thermal and electrical behavior.

Category 2: Manufacturer Recommended Substitutes (Active Status) Parts with Vdss ≥ 100V and Id ≥ 73A, manufactured by Infineon, Nexperia, STMicroelectronics, or onsemi. These parts are in Active product status and support long-term design continuity. Slight variations in gate charge, input capacitance, or power dissipation are acceptable within the D2PAK package constraint.

Category 3: Functional Alternatives (Lower Current Rating) Parts with Vdss = 100V but Id < 73A. These are suitable only for applications where the full 73A rating is not required.

All substitute parts maintain D2PAK packaging, ±20V gate voltage rating, -55°C to 175°C operating range, and MSL 1 moisture sensitivity level.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ 10V (mOhm)	Qg @ 10V (nC)	Pd Max (W)	Status
IRFS4610TRRPBF	Infineon	100	73	14 @ 44A	140	190	Obsolete
IRFS4610TRLPBF	Infineon	100	73	14 @ 44A	140	190	Not For New Designs
FDB120N10	onsemi	100	74	12 @ 74A	86	170	Active
PSMN013-100BS,118	Nexperia	100	68	13.9 @ 15A	59	170	Active
PSMN015-100B,118	Nexperia	100	75	15 @ 25A	90	300	Active
STB80NF10T4	STMicroelectronics	100	80	15 @ 40A	182	300	Active
STB120NF10T4	STMicroelectronics	100	110	10.5 @ 60A	233	312	Active
IPB123N10N3GATMA1	Infineon	100	58	12.3 @ 46A	35	94	Active
IPB144N12N3GATMA1	Infineon	120	56	14.4 @ 56A	49	107	Active
IPB50N10S3L16ATMA1	Infineon	100	50	15.4 @ 50A	64	100	Active

Engineering Selection Recommendations

Direct Replacement (Parametric Equivalent):

IRFS4610TRLPBF is the parametric equivalent with identical electrical specifications (100V, 73A, 14mOhm Rds On, 140nC gate charge). However, this part carries "Not For New Designs" status. Use only for maintenance of existing equipment or legacy system support where the original part number is specified.

Primary Active Substitutes (100V Rating, ≥73A Current):

FDB120N10 (onsemi PowerTrench®) – Rated 100V, 74A continuous drain current. Delivers superior on-state resistance (12mOhm vs. 14mOhm) and lower gate charge (86nC vs. 140nC), resulting in reduced switching losses and improved thermal performance. Power dissipation rated at 170W. Active product status with full RoHS3 compliance. Suitable for direct replacement in applications requiring the full 73A+ current rating.

PSMN015-100B,118 (Nexperia TrenchMOS™) – Rated 100V, 75A continuous drain current. Provides enhanced power dissipation capability (300W vs. 190W), enabling thermal margin in high-power applications. On-state resistance of 15mOhm is comparable to the original. Gate charge of 90nC is moderate. Active product status with RoHS3 compliance. Recommended for applications with elevated ambient temperatures or continuous high-current operation.

STB80NF10T4 (STMicroelectronics STripFET™ II) – Rated 100V, 80A continuous drain current. Offers superior current handling with 15mOhm on-state resistance and 300W power dissipation. Gate charge of 182nC is higher, indicating increased switching energy. Active product status with RoHS3 compliance. Suitable for applications requiring current margin above 73A.

Secondary Active Substitutes (100V Rating, <73A Current):

IPB123N10N3GATMA1 (Infineon OptiMOS™) – Rated 100V, 58A continuous drain current. Provides lower gate charge (35nC) and reduced input capacitance (2500pF), enabling faster switching and lower gate drive power. On-state resistance of 12.3mOhm is superior. Power dissipation of 94W is reduced. Use only in applications where 58A current rating is sufficient.

IPB50N10S3L16ATMA1 (Infineon OptiMOS™) – Rated 100V, 50A continuous drain current. Lowest gate charge (64nC) among active substitutes, optimizing for switching speed and efficiency. On-state resistance of 15.4mOhm is comparable. Power dissipation of 100W. Use only in applications where 50A current rating is sufficient.

Higher Voltage Alternative:

IPB144N12N3GATMA1 (Infineon OptiMOS™) – Rated 120V, 56A continuous drain current. Provides voltage margin for applications with transient overvoltage conditions. On-state resistance of 14.4mOhm and gate charge of 49nC are favorable. Power dissipation of 107W. Use only when 120V rating is required and 56A current is acceptable.

Selection Basis:

All recommended substitutes maintain D2PAK surface mount packaging, ±20V gate voltage rating, -55°C to 175°C operating temperature range, and MSL 1 moisture sensitivity. All active substitutes carry RoHS3 compliance and REACH Unaffected status, ensuring regulatory alignment with current manufacturing standards.

Frequently Asked Questions (FAQ)

Q1: Can IRFS4610TRLPBF be used as a direct replacement for IRFS4610TRRPBF?

A: IRFS4610TRLPBF is a parametric equivalent with identical electrical specifications. However, it carries "Not For New Designs" product status. Use only for maintenance of existing equipment where the original part number is specified. For new designs, select an Active status substitute such as FDB120N10 or PSMN015-100B,118.

Q2: What is the primary difference between FDB120N10 and PSMN015-100B,118?

A: Both are 100V, 75A+ rated devices in D2PAK packaging. FDB120N10 offers lower on-state resistance (12mOhm) and gate charge (86nC), reducing switching losses. PSMN015-100B,118 provides higher power dissipation capability (300W vs. 170W), offering thermal margin in high-power applications. Select FDB120N10 for efficiency-critical designs; select PSMN015-100B,118 for thermal-margin-critical designs.

Q3: Can I use IPB123N10N3GATMA1 or IPB50N10S3L16ATMA1 as substitutes?

A: These parts are suitable only if your application does not require the full 73A continuous drain current. IPB123N10N3GATMA1 is rated 58A; IPB50N10S3L16ATMA1 is rated 50A. Both offer superior gate charge characteristics (35nC and 64nC respectively) for switching-speed-critical applications. Verify that your circuit current requirements do not exceed these ratings.

Q4: Why is IPB144N12N3GATMA1 listed as a substitute if it has a different voltage rating?

A: IPB144N12N3GATMA1 is rated 120V instead of 100V. This part is suitable only for applications where higher voltage margin is required to handle transient overvoltage conditions. The 56A continuous drain current is lower than the original 73A rating. Use only when both 120V rating and 56A current are acceptable for your application.

Q5: Are all substitute parts RoHS3 compliant?

A: Yes. All active substitute parts listed (FDB120N10, PSMN013-100BS,118, PSMN015-100B,118, STB80NF10T4, STB120NF10T4, IPB123N10N3GATMA1, IPB144N12N3GATMA1, IPB50N10S3L16ATMA1) carry RoHS3 Compliant status and REACH Unaffected designation, ensuring compliance with current environmental and regulatory requirements.

Q6: What is the significance of gate charge (Qg) in selecting a substitute?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (such as 35nC in IPB123N10N3GATMA1 or 86nC in FDB120N10) reduces gate drive power and switching losses, improving efficiency. Higher gate charge (such as 233nC in STB120NF10T4) requires more gate drive energy but may offer other performance benefits such as higher current rating or lower on-state resistance.

Q7: Can I use STB120NF10T4 in place of IRFS4610TRRPBF?

A: Yes. STB120NF10T4 is rated 100V, 110A continuous drain current, exceeding the original 73A rating. On-state resistance of 10.5mOhm is superior to the original 14mOhm. Power dissipation of 312W provides significant thermal margin. Gate charge of 233nC is higher, requiring more gate drive energy. This part is suitable for applications requiring current margin and thermal headroom.

Q8: What packaging considerations apply to these substitutes?

A: All substitute parts use D2PAK (TO-263-3) surface mount packaging, identical to the original IRFS4610TRRPBF. PCB layout, thermal management, and mounting procedures remain unchanged. All parts maintain MSL 1 (Unlimited) moisture sensitivity level, requiring no special handling beyond standard ESD precautions.

Q9: Which substitute offers the best on-state resistance performance?

A: STB120NF10T4 offers the lowest on-state resistance at 10.5mOhm (measured at 60A, 10V). FDB120N10 provides 12mOhm (at 74A, 10V), and IPB123N10N3GATMA1 provides 12.3mOhm (at 46A, 10V). Lower on-state resistance reduces conduction losses and heat generation. Select based on your application's current and thermal requirements.

Q10: Are there any substitutes with lower gate charge than the original?

A: Yes. IPB123N10N3GATMA1 offers 35nC gate charge (vs. 140nC original), and FDB120N10 offers 86nC. These lower values reduce switching energy and gate drive power requirements. However, IPB123N10N3GATMA1 is rated only 58A, and FDB120N10 is rated 74A. Verify that current ratings meet your application requirements before selecting based on gate charge alone.

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