IRFS4610TRLPBF N-Channel 100V 73A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFS4610TRLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 73A continuous drain current at 25°C. This device is housed in a D2PAK (TO-263-3) surface mount package and delivers 190W maximum power dissipation. The part is classified as "Not For New Designs," indicating it has been superseded in Infineon's product portfolio. Equivalent and substitute parts are necessary for applications requiring continued supply, design flexibility, or performance optimization within compatible electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	73	A
On-State Resistance (Rds On) @ 44A, 10V	14	mOhm
Gate Charge (Qg) @ 10V	140	nC
Power Dissipation (Max)	190	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the IRFS4610TRLPBF is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
Package Type: Must be D2PAK (TO-263-3) or compatible TO-263 variant for mechanical interchangeability
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Operating Temperature Range: Must support -55°C to 175°C minimum
Mounting Type: Must be Surface Mount

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Substitute must support minimum 73A or provide equivalent current handling within the same thermal envelope
On-State Resistance (Rds On): Lower or equivalent values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Must support thermal requirements of the application

Substitutes are grouped into two categories:

Category A – Direct Electrical Equivalents (100V, 70A+): Parts meeting or exceeding the 73A current rating at 100V with D2PAK packaging. These include IPB70N10S3L12ATMA1, FDB120N10, HUF75645S3ST, and IXTA80N10T.

Category B – Functional Alternatives (100V, 50-70A): Parts with reduced current ratings (50-70A) but maintained 100V voltage rating and D2PAK packaging. These include IPB123N10N3GATMA1, IPB50N10S3L16ATMA1, and FDB150N10. These are suitable for applications where the full 73A capability is not required.

Category C – Voltage-Elevated Alternatives (120V): IPB144N12N3GATMA1 operates at 120V with 56A rating, suitable for applications requiring higher voltage margin.

Category D – Not Recommended: IPB80N03S4L03ATMA1 operates at 30V and is marked Obsolete; it does not meet the 100V voltage requirement and is excluded from substitution consideration.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ 10V (mOhm)	Qg @ 10V (nC)	Power Diss. (W)	Package	Status
IRFS4610TRLPBF	Infineon	100	73	14	140	190	D2PAK	Not For New Designs
IPB123N10N3GATMA1	Infineon	100	58	12.3	35	94	D2PAK	Active
IPB144N12N3GATMA1	Infineon	120	56	14.4	49	107	D2PAK	Active
IPB50N10S3L16ATMA1	Infineon	100	50	15.4	64	100	D2PAK	Active
IPB70N10S3L12ATMA1	Infineon	100	70	11.8	80	125	D2PAK	Active
FDB120N10	onsemi	100	74	12	86	170	D2PAK	Active
FDB150N10	onsemi	100	57	15	69	110	D2PAK	Active
HUF75645S3ST	onsemi	100	75	14	238	310	D2PAK	Obsolete
HUFA75645S3S	Fairchild	100	75	14	238	310	D2PAK	Active
IXTA80N10T	IXYS	100	80	14	60	230	D2PAK	Active

Engineering Selection Recommendations

Recommended Primary Substitutes (Active Status, 100V, 70A+):

FDB120N10 (onsemi) – Rated 100V, 74A, with 12mOhm Rds On and 170W power dissipation. Active product status ensures long-term availability. Electrical parameters closely match the IRFS4610TRLPBF with marginally lower on-state resistance and gate charge of 86nC.
IPB70N10S3L12ATMA1 (Infineon) – Rated 100V, 70A, with 11.8mOhm Rds On and 125W power dissipation. Active product from Infineon's OptiMOS™ series. Provides superior on-state resistance and lower gate charge (80nC), reducing switching losses.
IXTA80N10T (IXYS) – Rated 100V, 80A, with 14mOhm Rds On and 230W power dissipation. Active product with highest current rating and power dissipation capability. Gate charge of 60nC is the lowest among direct equivalents.

Secondary Substitutes (Active Status, 100V, 50-70A):

IPB123N10N3GATMA1 (Infineon) – Rated 100V, 58A. Suitable for applications not requiring the full 73A capability. Offers superior on-state resistance (12.3mOhm) and significantly lower gate charge (35nC), beneficial for high-frequency switching applications.
FDB150N10 (onsemi) – Rated 100V, 57A. Active product with 15mOhm Rds On. Appropriate for moderate current applications with reduced thermal requirements.

Voltage-Elevated Alternative:

IPB144N12N3GATMA1 (Infineon) – Rated 120V, 56A. Provides 20V additional voltage margin over the original specification. Suitable for applications requiring higher voltage headroom with slightly reduced current capacity.

Not Recommended:

HUF75645S3ST (onsemi) – Marked Obsolete; avoid for new designs despite electrical compatibility.
IPB80N03S4L03ATMA1 (Infineon) – Operates at 30V; does not meet 100V requirement. Marked Obsolete.

Compliance & Certifications:

All recommended substitutes are RoHS3 Compliant, REACH Unaffected, and classified under ECCN EAR99. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts, indicating no special moisture handling requirements.

Frequently Asked Questions (FAQ)

Q1: Can I use IPB70N10S3L12ATMA1 as a direct replacement for IRFS4610TRLPBF?

A: Yes. Both devices are rated 100V, operate in the 70A current range, use D2PAK packaging, and support -55°C to 175°C operating temperature. The IPB70N10S3L12ATMA1 is an Active product from Infineon's OptiMOS™ series with improved on-state resistance (11.8mOhm vs. 14mOhm) and lower gate charge (80nC vs. 140nC), making it a superior direct replacement.

Q2: What is the difference between FDB120N10 and IPB70N10S3L12ATMA1?

A: Both are 100V, 70A+ rated devices in D2PAK packaging. FDB120N10 (onsemi, PowerTrench® series) offers 74A rating and 170W power dissipation with 12mOhm Rds On. IPB70N10S3L12ATMA1 (Infineon, OptiMOS™ series) provides 70A rating and 125W power dissipation with 11.8mOhm Rds On and lower gate charge (80nC). Selection depends on thermal budget and switching frequency requirements.

Q3: Why is IPB80N03S4L03ATMA1 not recommended as a substitute?

A: IPB80N03S4L03ATMA1 is rated for 30V drain-to-source voltage, which is insufficient for applications requiring 100V operation. Additionally, this part is marked Obsolete, making it unsuitable for new designs or long-term supply assurance.

Q4: Can I use a 120V-rated device like IPB144N12N3GATMA1 instead of the 100V IRFS4610TRLPBF?

A: Yes, with design considerations. IPB144N12N3GATMA1 is rated 120V, 56A, and provides additional voltage margin. However, the current rating is reduced to 56A compared to the original 73A. This substitute is appropriate only if your application does not require the full 73A capability and benefits from the higher voltage rating.

Q5: What does "Not For New Designs" mean for the IRFS4610TRLPBF?

A: This status indicates that Infineon has discontinued active development and marketing of this part. While existing inventory may be available, the manufacturer recommends using newer alternatives for new product designs. This is why substitution with Active-status parts is necessary for long-term supply security.

Q6: Are all substitute parts RoHS3 compliant?

A: Yes. All recommended substitute parts listed in this document are RoHS3 Compliant and REACH Unaffected, meeting current environmental and regulatory requirements for electronic components.

Q7: Does package compatibility guarantee electrical interchangeability?

A: No. While all recommended substitutes use D2PAK (TO-263-3) packaging for mechanical interchangeability, electrical parameters such as Vdss, Id, Rds On, and gate charge must also be verified for your specific application. Always confirm that the substitute meets or exceeds your circuit's voltage, current, and switching requirements.

Q8: Which substitute offers the lowest switching losses?

A: IXTA80N10T has the lowest gate charge at 60nC, followed by IPB123N10N3GATMA1 at 35nC. Lower gate charge reduces switching losses in high-frequency applications. However, IPB123N10N3GATMA1 is rated for only 58A, so selection depends on your current requirements.

Q9: What is the advantage of lower on-state resistance (Rds On)?

A: Lower Rds On reduces conduction losses (I²R losses) during the on-state, resulting in lower heat generation and improved efficiency. For example, IPB70N10S3L12ATMA1 with 11.8mOhm Rds On generates less heat than the original 14mOhm specification at the same current level.

Q10: Can I mix different substitute parts in the same circuit?

A: Mixing different MOSFET models in parallel or series configurations is not recommended without detailed thermal and electrical analysis. Differences in Rds On, gate charge, and threshold voltage can cause uneven current distribution or switching timing issues. Consult application notes from the respective manufacturers if parallel operation is required.

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