IRFS4610 N-Channel MOSFET 100V 73A D2PAK Equivalent & Substitute Parts

Part Overview

The IRFS4610 is an N-Channel MOSFET manufactured by Infineon Technologies in the HEXFET® series, rated for 100V drain-to-source voltage with 73A continuous drain current at 25°C. The device is housed in a D2PAK (TO-263-3) surface mount package and delivers 190W maximum power dissipation. This part is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production support. Substitute devices must maintain compatibility with the D2PAK package footprint and operate within the specified voltage and current parameters.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	73	A
On-State Resistance (Rds On) @ 44A, 10V	14	mOhm
Gate Threshold Voltage (Vgs(th)) @ 100µA	4	V
Gate Charge (Qg) @ 10V	140	nC
Power Dissipation (Max)	190	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the IRFS4610 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
Package Type: Must be D2PAK (TO-263-3) for mechanical compatibility
FET Type: Must be N-Channel MOSFET
Continuous Drain Current (Id): Should be within acceptable range relative to 73A
On-State Resistance (Rds On): Lower values indicate improved performance
Operating Temperature Range: Must support -55°C to 175°C minimum
Gate Threshold Voltage (Vgs(th)): Must be compatible with 10V drive voltage

Substitution Logic: Devices with Vdss ≥ 100V, Id ≥ 50A, and D2PAK packaging are considered functionally equivalent. Devices with higher current ratings or lower Rds On values provide performance improvements. Devices with lower current ratings (below 50A) are acceptable only when power dissipation requirements are reduced. All substitute parts must maintain the same gate voltage compatibility and thermal operating range.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ 10V (mOhm)	Qg @ 10V (nC)	Power Diss. (W)	Temp Range (°C)	Status
IRFS4610	Infineon	100	73	14	140	190	-55 to 175	Obsolete
IPB123N10N3GATMA1	Infineon	100	58	12.3	35	94	-55 to 175	Active
IPB144N12N3GATMA1	Infineon	120	56	14.4	49	107	-55 to 175	Active
IPB50N10S3L16ATMA1	Infineon	100	50	15.4	64	100	-55 to 175	Active
FDB150N10	onsemi	100	57	15	69	110	-55 to 150	Active
PSMN013-100BS,118	Nexperia	100	68	13.9	59	170	-55 to 175	Active
PSMN015-100B,118	Nexperia	100	75	15	90	300	-55 to 175	Active
STB100N10F7	STMicroelectronics	100	80	8	61	150	-55 to 175	Active
STB120NF10T4	STMicroelectronics	100	110	10.5	233	312	-55 to 175	Active
STB80NF10T4	STMicroelectronics	100	80	15	182	300	-55 to 175	Active

Engineering Selection Recommendations

Compliance and Product Status: All substitute parts listed are classified as Active products with current manufacturing support, eliminating obsolescence risk associated with the IRFS4610. All substitute devices are RoHS3 compliant and REACH unaffected, meeting modern regulatory requirements. The IRFS4610 is RoHS non-compliant, making substitution necessary for applications requiring regulatory compliance.

Voltage and Current Compatibility: All substitute parts maintain 100V Vdss rating or higher, ensuring direct voltage compatibility. Current ratings range from 50A to 110A, accommodating applications with varying current demands. For applications requiring current capacity matching the original 73A specification, PSMN015-100B,118 (75A) and STB100N10F7 (80A) provide the closest performance envelope.

Thermal Performance: Power dissipation varies significantly across substitutes, ranging from 94W to 312W. Applications with strict thermal constraints should reference the power dissipation specification against circuit requirements. FDB150N10 operates to 150°C maximum junction temperature, compared to 175°C for other substitutes; this limitation applies only to applications requiring extended high-temperature operation.

On-State Resistance: Lower Rds On values reduce conduction losses. STB100N10F7 offers the lowest Rds On at 8 mOhm, providing superior efficiency. IPB123N10N3GATMA1 delivers 12.3 mOhm with significantly reduced gate charge (35 nC), beneficial for high-frequency switching applications.

Gate Charge Considerations: Gate charge directly impacts switching speed and driver requirements. IPB123N10N3GATMA1 (35 nC) and STB100N10F7 (61 nC) enable faster switching compared to the original 140 nC specification. STB120NF10T4 (233 nC) and STB80NF10T4 (182 nC) require proportionally higher gate drive current.

Frequently Asked Questions (FAQ)

Q: Can I directly replace IRFS4610 with any of these substitute parts?

A: Direct replacement requires matching the D2PAK package footprint and verifying that the substitute's electrical characteristics meet circuit requirements. All listed substitutes use D2PAK packaging. Verify that continuous drain current, on-state resistance, and power dissipation specifications align with your application's operating conditions.

Q: What is the primary reason for substituting IRFS4610?

A: The IRFS4610 is classified as obsolete with no active manufacturing support. All substitute parts are active products with guaranteed availability. Additionally, the IRFS4610 is RoHS non-compliant, while all substitutes are RoHS3 compliant, meeting current regulatory requirements.

Q: Which substitute offers the best performance match to IRFS4610?

A: PSMN013-100BS,118 provides the closest electrical match with 68A current rating, 13.9 mOhm Rds On, and 170W power dissipation. This device maintains compatibility with the original 100V rating and D2PAK package while offering improved gate charge characteristics (59 nC versus 140 nC).

Q: Are there current rating limitations when substituting?

A: Substitutes with current ratings below 50A (such as IPB50N10S3L16ATMA1 at 50A) are acceptable only when circuit design accommodates reduced current capacity. For applications requiring the full 73A capability, select substitutes rated 75A or higher: PSMN015-100B,118 (75A), STB100N10F7 (80A), or STB120NF10T4 (110A).

Q: Does operating temperature range affect substitution?

A: FDB150N10 operates to 150°C maximum junction temperature, compared to 175°C for other substitutes and the original IRFS4610. This limitation applies only to applications requiring sustained operation above 150°C. For standard industrial applications (-55°C to 125°C), all substitutes are fully compatible.

Q: What is the impact of different Rds On values?

A: Lower Rds On values reduce conduction losses and heat generation. STB100N10F7 at 8 mOhm provides superior efficiency compared to IRFS4610 at 14 mOhm. Higher Rds On values (15 mOhm or greater) increase power dissipation; verify thermal management capability before selection.

Q: How does gate charge affect circuit design?

A: Gate charge determines the energy required to switch the MOSFET. Lower gate charge (IPB123N10N3GATMA1 at 35 nC) enables faster switching and reduces driver power consumption. Higher gate charge (STB120NF10T4 at 233 nC) requires proportionally higher gate drive current but may offer other performance benefits such as improved current capacity.

Q: Can I use a substitute with higher voltage rating (120V) in a 100V circuit?

A: Yes. IPB144N12N3GATMA1 with 120V Vdss rating is fully compatible with 100V circuits. Higher voltage ratings provide additional safety margin and do not negatively impact circuit operation at lower voltages.

Q: What packaging considerations apply to these substitutes?

A: All substitute parts use D2PAK (TO-263-3) surface mount packaging, ensuring PCB footprint compatibility with IRFS4610. Verify that your assembly process and thermal management design accommodate the specific supplier device package designation (PG-TO263-3 or equivalent).

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