IRFS4410TRLPBF N-Channel 100V 88A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFS4410TRLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage and 88A continuous drain current in a D2PAK surface mount package. This device belongs to the HEXFET® series and is classified as Not For New Designs, indicating it has been superseded in Infineon's product portfolio. Alternative components with equivalent or superior electrical characteristics are available from multiple manufacturers including Nexperia, onsemi, and IXYS, offering active product status and enhanced performance metrics.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current @ 25°C (Id)	88	A (Tc)
On-State Resistance @ 58A, 10V (Rds On Max)	10	mOhm
Gate Threshold Voltage @ 150µA (Vgs th)	4	V
Gate Charge @ 10V (Qg Max)	180	nC
Input Capacitance @ 50V (Ciss Max)	5150	pF
Power Dissipation (Tc)	200	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-263-3 (D2PAK)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the IRFS4410TRLPBF is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
Package Type: Must be TO-263-3 (D2PAK) or equivalent surface mount configuration
Operating Temperature Range: Must support -55°C to 175°C (TJ)
Mounting Type: Surface mount only
RoHS Compliance: ROHS3 Compliant

Secondary Performance Considerations:

Continuous Drain Current (Id): Substitute parts rated at 80A or higher are functionally compatible
On-State Resistance (Rds On): Lower values indicate improved performance; maximum 10mOhm at rated conditions
Gate Charge (Qg): Lower values reduce switching losses; range 55–235 nC acceptable
Power Dissipation: Minimum 125W (Tc) required for thermal equivalence

Substitute parts are grouped into two categories: Direct Equivalents (matching or exceeding all primary parameters with active product status) and Functional Alternatives (meeting voltage and package requirements with different current or power ratings).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Qg Max (nC)	Power Diss. (W)	Product Status	Package
IRFS4410TRLPBF	Infineon	100	88	10	180	200	Not For New Designs	D2PAK
IPB083N10N3GATMA1	Infineon	100	80	8.3	55	125	Active	D2PAK
BUK768R1-100E,118	Nexperia	100	100	8.1	108	263	Obsolete	D2PAK
BUK969R3-100E,118	Nexperia	100	100	8.9	94.3	263	Active	D2PAK
FDB3632	onsemi	100	80	9	110	310	Active	D2PAK
HUF75545S3ST	onsemi	80	75	10	235	270	Active	D2PAK
IXFA130N10T	IXYS	100	130	9.1	104	360	Active	D2PAK
IXFA130N10T2	IXYS	100	130	9.1	130	360	Active	D2PAK
IXTA130N10T	IXYS	100	130	9.1	104	360	Active	D2PAK
IXTA130N10T-TRL	IXYS	100	130	9.1	104	360	Active	D2PAK
BUK9609-40B,118	Nexperia	40	75	7	32	157	Active	D2PAK

Engineering Selection Recommendations

Tier 1: Recommended Direct Substitutes (Active Status, 100V Rating)

The following parts are recommended for new designs and applications requiring direct replacement of the IRFS4410TRLPBF:

BUK969R3-100E,118 (Nexperia): 100V, 100A, Active product status, AEC-Q101 automotive qualified, TrenchMOS™ technology. Rds On of 8.9mOhm and 263W power dissipation exceed original specifications.
IXTA130N10T / IXTA130N10T-TRL (IXYS): 100V, 130A, Active product status, Trench technology. Superior current rating (130A vs. 88A) and 360W power dissipation provide design margin. Available in both tube and tape & reel packaging.
IXFA130N10T / IXFA130N10T2 (IXYS): 100V, 130A, Active product status, HiPerFET™ Trench technology. Equivalent performance to IXTA series with 360W power dissipation.
IPB083N10N3GATMA1 (Infineon): 100V, 80A, Active product status, OptiMOS™ series. Lower gate charge (55nC) and improved Rds On (8.3mOhm) reduce switching losses. Suitable for applications where current requirement is 80A or less.

Tier 2: Functional Alternatives (Active Status, Voltage or Current Derating)

FDB3632 (onsemi): 100V, 80A, Active product status, PowerTrench® technology. Highest power dissipation (310W) among 100V options. Gate charge of 110nC and Rds On of 9mOhm provide balanced performance.
HUF75545S3ST (onsemi): 80V, 75A, Active product status, UltraFET™ series. Suitable only for applications with maximum 80V bus voltage. Rds On matches original at 10mOhm; gate charge of 235nC is higher.

Tier 3: Obsolete or Limited Availability (Not Recommended for New Designs)

BUK768R1-100E,118 (Nexperia): 100V, 100A, Obsolete product status. Avoid for new designs despite superior specifications.
BUK9609-40B,118 (Nexperia): 40V rating is insufficient for 100V applications. Not suitable as substitute.

Compliance and Certification:

All recommended substitutes maintain ROHS3 compliance and REACH unaffected status. BUK969R3-100E,118 and BUK9609-40B,118 carry AEC-Q101 automotive qualification, suitable for automotive and industrial applications.

Frequently Asked Questions (FAQ)

Q1: Can I use HUF75545S3ST as a direct replacement for IRFS4410TRLPBF?

A: HUF75545S3ST is not a direct replacement. While it shares the D2PAK package and similar Rds On (10mOhm), its Vdss rating is 80V compared to the required 100V. Use only in applications with maximum 80V bus voltage. For 100V applications, select from Tier 1 recommendations.

Q2: What is the difference between IXTA130N10T and IXFA130N10T?

A: Both devices are 100V, 130A MOSFETs in D2PAK packages with 360W power dissipation and 9.1mOhm Rds On. IXTA130N10T uses Trench technology; IXFA130N10T uses HiPerFET™ Trench technology. Gate charge differs slightly (104nC vs. 104nC for IXFA130N10T, 130nC for IXFA130N10T2). Both are functionally equivalent for most applications.

Q3: Why is IPB083N10N3GATMA1 rated at 80A instead of 88A?

A: IPB083N10N3GATMA1 is rated for 80A continuous drain current, which is 8A lower than the original 88A. This part is suitable for applications requiring up to 80A. For applications requiring the full 88A or higher, select IXTA130N10T, IXFA130N10T, or BUK969R3-100E,118 (100A rating).

Q4: Is BUK768R1-100E,118 suitable for new designs?

A: No. BUK768R1-100E,118 is classified as Obsolete. Although it exceeds the original specifications (100A, 263W, 8.1mOhm Rds On), Nexperia has discontinued this product. Use active alternatives from Tier 1 instead.

Q5: What packaging options are available for substitute parts?

A: All substitute parts use TO-263-3 (D2PAK) surface mount packages. Packaging variants include Tape & Reel (TR), Tube, and Cut Tape (CT). IXTA130N10T-TRL is specifically offered in tape & reel format for automated assembly. Verify packaging availability with your supplier before procurement.

Q6: Do all substitute parts support the same operating temperature range?

A: Yes. All recommended substitute parts support -55°C to 175°C (TJ) operating temperature range, matching the original IRFS4410TRLPBF specification.

Q7: Which substitute offers the lowest on-state resistance?

A: IPB083N10N3GATMA1 offers the lowest Rds On at 8.3mOhm @ 73A, 10V. IXTA130N10T, IXFA130N10T, and IXFA130N10T2 offer 9.1mOhm @ 25A, 10V. Lower Rds On reduces conduction losses and heat generation.

Q8: Which substitute has the lowest gate charge?

A: IPB083N10N3GATMA1 has the lowest gate charge at 55nC @ 10V, reducing switching losses and enabling faster switching speeds. This is beneficial in high-frequency switching applications.

Q9: Are automotive-qualified alternatives available?

A: Yes. BUK969R3-100E,118 and BUK9609-40B,118 (Nexperia) carry AEC-Q101 automotive qualification. These parts are suitable for automotive and industrial applications requiring automotive-grade reliability.

Q10: What is the difference between Tier 1 and Tier 2 recommendations?

A: Tier 1 parts are 100V-rated with active product status, providing direct voltage compatibility. Tier 2 parts either have lower voltage ratings (HUF75545S3ST at 80V) or lower current ratings (FDB3632 at 80A). Select Tier 1 for applications requiring full 100V and 88A+ capability. Tier 2 is suitable only when application requirements permit voltage or current derating.

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