IRFS4410 Equivalent & Substitute Parts Reference

Part Overview

The Infineon Technologies IRFS4410 is an N-Channel power MOSFET rated at 100V and 96A (Tc), with a maximum Rds(on) of 10mOhm at 58A, 10V. It is housed in a surface mount D2PAK (TO-263-3, 2 Leads + Tab, TO-263AB) package, suitable for high-current switching applications. The IRFS4410 is classified as obsolete, driving the necessity to identify fully compatible alternative models for engineers requiring drop-in replacements or redesigns in existing circuits.

Substiute Parts

IRFS4410
Infineon TechnologiesIn Stock: 32587IRFS4410 Datasheet
IRFS4410
Current Part
IPB083N10N3GATMA1
Infineon TechnologiesIn Stock: 5251IPB083N10N3GATMA1 Datasheet
IPB083N10N3GATMA1
MFR Recommended
BUK768R1-100E,118
Nexperia USA Inc.In Stock: 8160BUK768R1-100E,118 Datasheet
BUK768R1-100E,118
MFR Recommended
BUK9609-40B,118
Nexperia USA Inc.In Stock: 6360BUK9609-40B,118 Datasheet
BUK9609-40B,118
MFR Recommended
BUK969R3-100E,118
Nexperia USA Inc.In Stock: 940BUK969R3-100E,118 Datasheet
BUK969R3-100E,118
MFR Recommended
FDB3632
onsemiIn Stock: 15388FDB3632 Datasheet
FDB3632
MFR Recommended
HUF75545S3ST
onsemiIn Stock: 4639HUF75545S3ST Datasheet
HUF75545S3ST
MFR Recommended
PSMN013-100BS,118
Nexperia USA Inc.In Stock: 16044PSMN013-100BS,118 Datasheet
PSMN013-100BS,118
MFR Recommended
PSMN9R5-100BS,118
Nexperia USA Inc.In Stock: 6640PSMN9R5-100BS,118 Datasheet
PSMN9R5-100BS,118
MFR Recommended
SQM120N10-09_GE3
Vishay SiliconixIn Stock: 1115SQM120N10-09_GE3 Datasheet
SQM120N10-09_GE3
MFR Recommended
STB100N10F7
STMicroelectronicsIn Stock: 3194STB100N10F7 Datasheet
STB100N10F7
MFR Recommended
STB120NF10T4
STMicroelectronicsIn Stock: 15214STB120NF10T4 Datasheet
STB120NF10T4
MFR Recommended
STB80NF10T4
STMicroelectronicsIn Stock: 15280STB80NF10T4 Datasheet
STB80NF10T4
MFR Recommended
SUM70090E-GE3
Vishay SiliconixIn Stock: 1300SUM70090E-GE3 Datasheet
SUM70090E-GE3
MFR Recommended

Key Parameters

Parameter IRFS4410 Value
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 96A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 58A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5150 pF @ 50 V
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RoHS Status RoHS non-compliant
MSL 1 (Unlimited)
REACH Status REACH Unaffected

Substitute Part Grouping Explanation

Substitute components for IRFS4410 are selected strictly based on the key parameters affecting electrical and mechanical compatibility. These parameters include FET type, technology, drain to source voltage (Vdss), continuous drain current (Id), Rds(on) at specified conditions, gate threshold voltage (Vgs(th)), gate charge (Qg), maximum Vgs, input capacitance (Ciss), maximum power dissipation, operating temperature range, and package specifications. Only parts matching or exceeding these requirements in relevant aspects and sharing the same package (D2PAK / TO-263-3, 2 Leads + Tab, TO-263AB) are considered valid substitutes.

Parameter Comparison

Manufacturer Part Number Manufacturer Vdss (V) Continuous Drain Current (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) Gate Charge (Qg) (Max) Vgs (Max) Input Capacitance (Ciss) (Max) Power Dissipation (Max) Operating Temp Mounting Type Package RoHS Status
IRFS4410 Infineon 100 96A (Tc) 10mOhm @ 58A, 10V 4V @ 150µA 180 nC @ 10V ±20V 5150 pF @ 50V 250W (Tc) -55~175°C SMT D2PAK Non-Compliant Obsolete
IPB083N10N3GATMA1 Infineon 100 80A (Tc) 8.3mOhm @ 73A, 10V 3.5V @ 75µA 55 nC @ 10V ±20V 3980 pF @ 50V 125W (Tc) -55~175°C SMT D2PAK ROHS3 Active
BUK768R1-100E,118 Nexperia 100 100A (Tc) 8.1mOhm @ 25A, 10V 4V @ 1mA 108 nC @ 10V ±20V 7380 pF @ 25V 263W (Tc) -55~175°C SMT D2PAK ROHS3 Obsolete
BUK9609-40B,118 Nexperia 40 75A (Tc) 7mOhm @ 25A, 10V 2V @ 1mA 32 nC @ 5V ±15V 3600 pF @ 25V 157W (Tc) -55~175°C SMT D2PAK ROHS3 Active
BUK969R3-100E,118 Nexperia 100 100A (Tc) 8.9mOhm @ 25A, 10V 2.1V @ 1mA 94.3 nC @ 5V ±10V 11650 pF @ 25V 263W (Tc) -55~175°C SMT D2PAK ROHS3 Active
FDB3632 onsemi 100 12A (Ta), 80A (Tc) 9mOhm @ 80A, 10V 4V @ 250µA 110 nC @ 10V ±20V 6000 pF @ 25V 310W (Tc) -55~175°C SMT D2PAK ROHS3 Active
HUF75545S3ST onsemi 80 75A (Tc) 10mOhm @ 75A, 10V 4V @ 250µA 235 nC @ 20V ±20V 3750 pF @ 25V 270W (Tc) -55~175°C SMT D2PAK ROHS3 Active
PSMN013-100BS,118 Nexperia 100 68A (Tc) 13.9mOhm @ 15A, 10V 4V @ 1mA 59 nC @ 10V ±20V 3195 pF @ 50V 170W (Tc) -55~175°C SMT D2PAK ROHS3 Active
PSMN9R5-100BS,118 Nexperia 100 89A (Tc) 9.6mOhm @ 15A, 10V 4V @ 1mA 82 nC @ 10V ±20V 4454 pF @ 50V 211W (Tc) -55~175°C SMT D2PAK ROHS3 Active
SQM120N10-09_GE3 Vishay 100 120A (Tc) 9.5mOhm @ 30A, 10V 3.5V @ 250µA 180 nC @ 10V ±20V 8645 pF @ 25V 375W (Tc) -55~175°C SMT D2PAK Not Specified Active
STB100N10F7 STMicro 100 80A (Tc) 8mOhm @ 40A, 10V 4.5V @ 250µA 61 nC @ 10V ±20V 4369 pF @ 50V 150W (Tc) -55~175°C SMT D2PAK ROHS3 Active
STB120NF10T4 STMicro 100 110A (Tc) 10.5mOhm @ 60A, 10V 4V @ 250µA 233 nC @ 10V ±20V 5200 pF @ 25V 312W (Tc) -55~175°C SMT D2PAK ROHS3 Active
STB80NF10T4 STMicro 100 80A (Tc) 15mOhm @ 40A, 10V 4V @ 250µA 182 nC @ 10V ±20V 5500 pF @ 25V 300W (Tc) -55~175°C SMT D2PAK ROHS3 Active
SUM70090E-GE3 Vishay 100 50A (Tc) 8.9mOhm @ 20A, 10V 4V @ 250µA 50 nC @ 10V ±20V 1950 pF @ 50V 125W (Tc) -55~175°C SMT D2PAK ROHS3 Active

Engineering Selection Recommendations

IRFS4410 is classified as obsolete and is RoHS non-compliant. For applications requiring compliance with ROHS3 standards, only parts with ROHS3 Compliant status should be used. All substitute parts listed are REACH Unaffected and meet at least MSL 1 (Unlimited) requirements. Active status parts are preferred to ensure long-term availability. Package equivalence (TO-263-3, D2PAK, Surface Mount) must be maintained for direct physical and mechanical compatibility.

Frequently Asked Questions (FAQ)

Q1: What are the key criteria for selecting a substitute for IRFS4410?
A1: Substitution is based on matching FET type, technology, drain to source voltage (Vdss), continuous drain current (Id), Rds(on) at specified conditions, gate charge, package type, and mounting style.

Q2: Is it mandatory that substitute MOSFETs have the same package as IRFS4410?
A2: For direct replacement, the package must be D2PAK (TO-263-3, 2 Leads + Tab, TO-263AB) with surface mount compatibility to ensure mechanical and PCB fit.

Q3: How do RoHS and REACH compliance affect substitute selection?
A3: Substitutes that are ROHS3 compliant are required for compliance with modern environmental and regulatory requirements. REACH unaffected status is also listed for reference.

Q4: Can lower gate charge (Qg) or Rds(on) values provide electrical advantages?
A4: Substitution requires that Qg and Rds(on) at the specified test conditions are equal to or better than the original. Lower values may result in improved switching or efficiency but must strictly match application requirements.

Q5: Is operating temperature compatibility mandatory?
A5: Substitute parts listed match the -55°C ~ 175°C (TJ) range and must support the application's required conditions. Always use substitute parts with the same or wider operating temperature range.

Q6: Are all substitute MOSFETs listed suitable for automotive environments?
A6: Substitute status does not imply automotive qualification unless specifically noted in the part’s description, such as Grade: Automotive or AEC-Q101 qualification.

Q7: Can a 40V or 80V MOSFET substitute for a 100V original?
A7: Key parameters require matching or exceeding the maximum voltage rating of the original (100V). Only 100V-rated substitutes ensure full electrical compatibility with IRFS4410 applications.

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