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IRFS4410 Equivalent & Substitute Parts Reference
Part Overview
The Infineon Technologies IRFS4410 is an N-Channel power MOSFET rated at 100V and 96A (Tc), with a maximum Rds(on) of 10mOhm at 58A, 10V. It is housed in a surface mount D2PAK (TO-263-3, 2 Leads + Tab, TO-263AB) package, suitable for high-current switching applications. The IRFS4410 is classified as obsolete, driving the necessity to identify fully compatible alternative models for engineers requiring drop-in replacements or redesigns in existing circuits.
Substiute Parts
Key Parameters
| Parameter | IRFS4410 Value |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Continuous Drain Current (Id) @ 25°C | 96A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 58A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5150 pF @ 50 V |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| RoHS Status | RoHS non-compliant |
| MSL | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
Substitute Part Grouping Explanation
Substitute components for IRFS4410 are selected strictly based on the key parameters affecting electrical and mechanical compatibility. These parameters include FET type, technology, drain to source voltage (Vdss), continuous drain current (Id), Rds(on) at specified conditions, gate threshold voltage (Vgs(th)), gate charge (Qg), maximum Vgs, input capacitance (Ciss), maximum power dissipation, operating temperature range, and package specifications. Only parts matching or exceeding these requirements in relevant aspects and sharing the same package (D2PAK / TO-263-3, 2 Leads + Tab, TO-263AB) are considered valid substitutes.
Parameter Comparison
| Manufacturer Part Number | Manufacturer | Vdss (V) | Continuous Drain Current (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) | Gate Charge (Qg) (Max) | Vgs (Max) | Input Capacitance (Ciss) (Max) | Power Dissipation (Max) | Operating Temp | Mounting Type | Package | RoHS | Status |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFS4410 | Infineon | 100 | 96A (Tc) | 10mOhm @ 58A, 10V | 4V @ 150µA | 180 nC @ 10V | ±20V | 5150 pF @ 50V | 250W (Tc) | -55~175°C | SMT | D2PAK | Non-Compliant | Obsolete |
| IPB083N10N3GATMA1 | Infineon | 100 | 80A (Tc) | 8.3mOhm @ 73A, 10V | 3.5V @ 75µA | 55 nC @ 10V | ±20V | 3980 pF @ 50V | 125W (Tc) | -55~175°C | SMT | D2PAK | ROHS3 | Active |
| BUK768R1-100E,118 | Nexperia | 100 | 100A (Tc) | 8.1mOhm @ 25A, 10V | 4V @ 1mA | 108 nC @ 10V | ±20V | 7380 pF @ 25V | 263W (Tc) | -55~175°C | SMT | D2PAK | ROHS3 | Obsolete |
| BUK9609-40B,118 | Nexperia | 40 | 75A (Tc) | 7mOhm @ 25A, 10V | 2V @ 1mA | 32 nC @ 5V | ±15V | 3600 pF @ 25V | 157W (Tc) | -55~175°C | SMT | D2PAK | ROHS3 | Active |
| BUK969R3-100E,118 | Nexperia | 100 | 100A (Tc) | 8.9mOhm @ 25A, 10V | 2.1V @ 1mA | 94.3 nC @ 5V | ±10V | 11650 pF @ 25V | 263W (Tc) | -55~175°C | SMT | D2PAK | ROHS3 | Active |
| FDB3632 | onsemi | 100 | 12A (Ta), 80A (Tc) | 9mOhm @ 80A, 10V | 4V @ 250µA | 110 nC @ 10V | ±20V | 6000 pF @ 25V | 310W (Tc) | -55~175°C | SMT | D2PAK | ROHS3 | Active |
| HUF75545S3ST | onsemi | 80 | 75A (Tc) | 10mOhm @ 75A, 10V | 4V @ 250µA | 235 nC @ 20V | ±20V | 3750 pF @ 25V | 270W (Tc) | -55~175°C | SMT | D2PAK | ROHS3 | Active |
| PSMN013-100BS,118 | Nexperia | 100 | 68A (Tc) | 13.9mOhm @ 15A, 10V | 4V @ 1mA | 59 nC @ 10V | ±20V | 3195 pF @ 50V | 170W (Tc) | -55~175°C | SMT | D2PAK | ROHS3 | Active |
| PSMN9R5-100BS,118 | Nexperia | 100 | 89A (Tc) | 9.6mOhm @ 15A, 10V | 4V @ 1mA | 82 nC @ 10V | ±20V | 4454 pF @ 50V | 211W (Tc) | -55~175°C | SMT | D2PAK | ROHS3 | Active |
| SQM120N10-09_GE3 | Vishay | 100 | 120A (Tc) | 9.5mOhm @ 30A, 10V | 3.5V @ 250µA | 180 nC @ 10V | ±20V | 8645 pF @ 25V | 375W (Tc) | -55~175°C | SMT | D2PAK | Not Specified | Active |
| STB100N10F7 | STMicro | 100 | 80A (Tc) | 8mOhm @ 40A, 10V | 4.5V @ 250µA | 61 nC @ 10V | ±20V | 4369 pF @ 50V | 150W (Tc) | -55~175°C | SMT | D2PAK | ROHS3 | Active |
| STB120NF10T4 | STMicro | 100 | 110A (Tc) | 10.5mOhm @ 60A, 10V | 4V @ 250µA | 233 nC @ 10V | ±20V | 5200 pF @ 25V | 312W (Tc) | -55~175°C | SMT | D2PAK | ROHS3 | Active |
| STB80NF10T4 | STMicro | 100 | 80A (Tc) | 15mOhm @ 40A, 10V | 4V @ 250µA | 182 nC @ 10V | ±20V | 5500 pF @ 25V | 300W (Tc) | -55~175°C | SMT | D2PAK | ROHS3 | Active |
| SUM70090E-GE3 | Vishay | 100 | 50A (Tc) | 8.9mOhm @ 20A, 10V | 4V @ 250µA | 50 nC @ 10V | ±20V | 1950 pF @ 50V | 125W (Tc) | -55~175°C | SMT | D2PAK | ROHS3 | Active |
Engineering Selection Recommendations
IRFS4410 is classified as obsolete and is RoHS non-compliant. For applications requiring compliance with ROHS3 standards, only parts with ROHS3 Compliant status should be used. All substitute parts listed are REACH Unaffected and meet at least MSL 1 (Unlimited) requirements. Active status parts are preferred to ensure long-term availability. Package equivalence (TO-263-3, D2PAK, Surface Mount) must be maintained for direct physical and mechanical compatibility.
Frequently Asked Questions (FAQ)
Q1: What are the key criteria for selecting a substitute for IRFS4410?
A1: Substitution is based on matching FET type, technology, drain to source voltage (Vdss), continuous drain current (Id), Rds(on) at specified conditions, gate charge, package type, and mounting style.
Q2: Is it mandatory that substitute MOSFETs have the same package as IRFS4410?
A2: For direct replacement, the package must be D2PAK (TO-263-3, 2 Leads + Tab, TO-263AB) with surface mount compatibility to ensure mechanical and PCB fit.
Q3: How do RoHS and REACH compliance affect substitute selection?
A3: Substitutes that are ROHS3 compliant are required for compliance with modern environmental and regulatory requirements. REACH unaffected status is also listed for reference.
Q4: Can lower gate charge (Qg) or Rds(on) values provide electrical advantages?
A4: Substitution requires that Qg and Rds(on) at the specified test conditions are equal to or better than the original. Lower values may result in improved switching or efficiency but must strictly match application requirements.
Q5: Is operating temperature compatibility mandatory?
A5: Substitute parts listed match the -55°C ~ 175°C (TJ) range and must support the application's required conditions. Always use substitute parts with the same or wider operating temperature range.
Q6: Are all substitute MOSFETs listed suitable for automotive environments?
A6: Substitute status does not imply automotive qualification unless specifically noted in the part’s description, such as Grade: Automotive or AEC-Q101 qualification.
Q7: Can a 40V or 80V MOSFET substitute for a 100V original?
A7: Key parameters require matching or exceeding the maximum voltage rating of the original (100V). Only 100V-rated substitutes ensure full electrical compatibility with IRFS4410 applications.
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