IRFS4310ZPBF N-Channel 100V 120A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFS4310ZPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage and 120A continuous drain current at 25°C. This device is packaged in D2PAK (TO-263-3) surface mount configuration and is designed for high-current switching applications. The part is discontinued at DiGi Electronics, making equivalent and substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	120	A (Tc)
On-State Resistance (Rds On) @ 75A, 10V	6	mOhm
Gate Charge (Qg) @ 10V	170	nC
Power Dissipation (Max)	250	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
Gate Threshold Voltage (Vgs(th)) @ 150µA	4	V (Max)
Input Capacitance (Ciss) @ 50V	6860	pF

Substitute Part Grouping Explanation

Substitution of the IRFS4310ZPBF is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
Continuous Drain Current (Id): Must meet or exceed 120A at 25°C (Tc rating)
Package Type: D2PAK (TO-263-3) or compatible surface mount package
Gate Drive Voltage: 10V nominal drive capability
Operating Temperature Range: -55°C to 175°C minimum
RoHS3 Compliance and REACH Unaffected status

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce drive circuit requirements
Power Dissipation capability: Minimum 250W (Tc)
Threshold Voltage (Vgs(th)): Compatibility with 10V gate drive signals

Substitute parts are grouped into two categories: Direct Current Rating Matches (120A) and Higher Current Capacity Alternatives (160A-180A), which provide enhanced performance headroom while maintaining electrical compatibility.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Package	Status
IRFS4310ZPBF	Infineon	100	120	6 @ 75A, 10V	170 @ 10V	250 (Tc)	D2PAK	Discontinued
PSMN3R8-100BS,118	Nexperia	100	120	3.9 @ 25A, 10V	170 @ 10V	306 (Tc)	D2PAK	Active
STB120NF10T4	STMicroelectronics	100	110	10.5 @ 60A, 10V	233 @ 10V	312 (Tc)	D2PAK	Active
FDB86135	onsemi	100	75	3.5 @ 75A, 10V	116 @ 10V	227 (Tc)	D2PAK	Active
PSMN009-100B,118	Nexperia	100	75	8.8 @ 25A, 10V	156 @ 10V	230 (Tc)	D2PAK	Active
PSMN7R0-100BS,118	Nexperia	100	100	6.8 @ 15A, 10V	125 @ 10V	269 (Tc)	D2PAK	Active
STB100N10F7	STMicroelectronics	100	80	8 @ 40A, 10V	61 @ 10V	150 (Tc)	D2PAK	Active
IXTA160N10T	IXYS	100	160	7 @ 25A, 10V	132 @ 10V	430 (Tc)	TO-263AA	Active
IXTA160N10T7	IXYS	100	160	7 @ 25A, 10V	132 @ 10V	430 (Tc)	TO-263-7	Active
IXTA180N10T7	IXYS	100	180	6.4 @ 25A, 10V	151 @ 10V	480 (Tc)	TO-263-7	Active
AOB410L	Alpha & Omega Semiconductor	100	150	6.5 @ 20A, 10V	129 @ 10V	333 (Tc)	D2PAK	Active

Engineering Selection Recommendations

Direct Replacement (120A Current Rating):

PSMN3R8-100BS,118 (Nexperia) is the primary direct replacement for IRFS4310ZPBF. Both devices share identical 120A continuous drain current rating, 100V Vdss, 170 nC gate charge, and D2PAK packaging. PSMN3R8-100BS,118 offers superior on-state resistance (3.9 mOhm vs. 6 mOhm) and higher power dissipation capability (306W vs. 250W). This part is RoHS3 compliant, REACH unaffected, and currently in active production with 17,551 units in stock.

Alternative Current Ratings (Same Package):

For applications where current headroom is beneficial, STB120NF10T4 (STMicroelectronics) provides 110A rating in D2PAK with 312W power dissipation. PSMN7R0-100BS,118 (Nexperia) offers 100A rating with improved thermal performance (269W). Both maintain 100V Vdss and 10V gate drive compatibility.

Higher Current Capacity (160A-180A):

IXTA160N10T and IXTA160N10T7 (IXYS) provide 160A continuous drain current with 430W power dissipation. IXTA180N10T7 (IXYS) delivers 180A with 480W dissipation. These devices are available in TO-263-7 (6-lead) variant, which differs from the standard D2PAK pinout. AOB410L (Alpha & Omega Semiconductor) offers 150A in standard D2PAK with 333W dissipation and is recommended by manufacturer.

Lower Current Alternatives:

FDB86135 (onsemi) and PSMN009-100B,118 (Nexperia) are rated for 75A continuous current. These are suitable only for applications where 75A maximum current is acceptable. STB100N10F7 (STMicroelectronics) provides 80A with reduced power dissipation (150W), limiting thermal performance.

All recommended substitutes maintain RoHS3 compliance, REACH unaffected status, and -55°C to 175°C operating temperature range.

Frequently Asked Questions (FAQ)

Q: Can PSMN3R8-100BS,118 directly replace IRFS4310ZPBF without circuit modification?

A: Yes. Both devices share 100V Vdss, 120A continuous drain current, 10V gate drive voltage, and D2PAK surface mount packaging. Gate charge (170 nC) is identical, ensuring compatible drive circuit performance. No modifications are required.

Q: What is the difference between IXTA160N10T and IXTA160N10T7?

A: Both devices have identical electrical specifications (100V, 160A, 7 mOhm Rds On). The primary difference is package configuration: IXTA160N10T uses TO-263AA (standard 3-lead D2PAK), while IXTA160N10T7 uses TO-263-7 (6-lead variant). PCB layout and pinout compatibility must be verified before substitution.

Q: Is STB100N10F7 suitable as a substitute if my application requires 120A?

A: No. STB100N10F7 is rated for maximum 80A continuous drain current, which is insufficient for 120A applications. Using this part would result in thermal stress and potential device failure. Select PSMN3R8-100BS,118, STB120NF10T4, or higher-rated alternatives.

Q: What is the advantage of using IXTA180N10T7 over PSMN3R8-100BS,118?

A: IXTA180N10T7 provides 180A continuous current capacity versus 120A, offering 50% additional current headroom. Power dissipation is 480W versus 306W. However, IXTA180N10T7 uses TO-263-7 (6-lead) packaging, requiring PCB redesign. PSMN3R8-100BS,118 maintains standard D2PAK compatibility with the original design.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All recommended substitute parts listed are RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Q: Can I use AOB410L as a drop-in replacement?

A: AOB410L is electrically compatible with 100V Vdss and D2PAK packaging. However, it is rated for 150A continuous current (exceeding the 120A requirement) and uses SDMOS™ technology versus the original HEXFET® series. Verify gate drive characteristics and thermal management in your specific application before implementation.

Q: What does "Tc" rating mean in the current specifications?

A: "Tc" indicates the current rating at the case temperature (typically 25°C). This is the continuous drain current the device can sustain under specified thermal conditions. All current ratings in this comparison use Tc measurement standard.

Q: Why do some parts show lower Rds On values at different current levels?

A: On-state resistance (Rds On) varies with gate-source voltage (Vgs) and drain current (Id). Manufacturers specify Rds On at specific test conditions. Lower Rds On values indicate reduced conduction losses and improved efficiency. Compare Rds On values only at identical Vgs and Id conditions for accurate performance assessment.

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