IRFS4310PBF N-Channel 100V 130A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFS4310PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 130A continuous drain current at 25°C. The device is housed in a D2PAK (TO-263-3) surface mount package and is designed for high-current switching applications. The IRFS4310PBF is discontinued at DiGi Electronics, making equivalent substitute parts necessary for ongoing design support and procurement. Suitable alternatives must maintain the same voltage rating, comparable current handling capability, identical package type, and compatible electrical characteristics for direct circuit board replacement.

Substiute Parts

IRFS4310PBF
Infineon TechnologiesIn Stock: 6482IRFS4310PBF Datasheet
IRFS4310PBF
Current Part
IRFS4310ZTRLPBF
Infineon TechnologiesIn Stock: 27658IRFS4310ZTRLPBF Datasheet
IRFS4310ZTRLPBF
MFR Recommended
AOB410L
Alpha & Omega Semiconductor Inc.In Stock: 33753AOB410L Datasheet
AOB410L
MFR Recommended
BUK965R8-100E,118
Nexperia USA Inc.In Stock: 4211BUK965R8-100E,118 Datasheet
BUK965R8-100E,118
MFR Recommended
IXFA180N10T2
IXYSIn Stock: 6657IXFA180N10T2 Datasheet
IXFA180N10T2
MFR Recommended
IXTA160N10T
IXYSIn Stock: 969IXTA160N10T Datasheet
IXTA160N10T
MFR Recommended
IXTA160N10T7
IXYSIn Stock: 1146IXTA160N10T7 Datasheet
IXTA160N10T7
MFR Recommended
IXTA180N10T
IXYSIn Stock: 2462IXTA180N10T Datasheet
IXTA180N10T
MFR Recommended
IXTA180N10T7
IXYSIn Stock: 52670IXTA180N10T7 Datasheet
IXTA180N10T7
MFR Recommended
PSMN009-100B,118
Nexperia USA Inc.In Stock: 800PSMN009-100B,118 Datasheet
PSMN009-100B,118
MFR Recommended
PSMN5R6-100BS,118
Nexperia USA Inc.In Stock: 4253PSMN5R6-100BS,118 Datasheet
PSMN5R6-100BS,118
MFR Recommended
PSMN6R5-80BS,118
Nexperia USA Inc.In Stock: 5130PSMN6R5-80BS,118 Datasheet
PSMN6R5-80BS,118
MFR Recommended
PSMN7R0-100BS,118
Nexperia USA Inc.In Stock: 4004PSMN7R0-100BS,118 Datasheet
PSMN7R0-100BS,118
MFR Recommended
PSMN7R6-100BSEJ
Nexperia USA Inc.In Stock: 1592PSMN7R6-100BSEJ Datasheet
PSMN7R6-100BSEJ
MFR Recommended
SQM70060EL_GE3
Vishay SiliconixIn Stock: 1621SQM70060EL_GE3 Datasheet
SQM70060EL_GE3
MFR Recommended
STB100N10F7
STMicroelectronicsIn Stock: 3194STB100N10F7 Datasheet
STB100N10F7
MFR Recommended
STB120NF10T4
STMicroelectronicsIn Stock: 15214STB120NF10T4 Datasheet
STB120NF10T4
MFR Recommended
SUM70060E-GE3
Vishay SiliconixIn Stock: 2938SUM70060E-GE3 Datasheet
SUM70060E-GE3
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 130 A (Tc)
On-State Resistance (Rds On) @ 75A, 10V 7 mOhm
Gate-Source Voltage (Vgs) Maximum ±20 V
Power Dissipation (Max) 300 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type D2PAK (TO-263-3) Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution eligibility for the IRFS4310PBF is determined by the following criteria:

Primary Matching Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal 100V
  • Package Type: Must be D2PAK (TO-263-3) or compatible TO-263 variant
  • FET Type: Must be N-Channel
  • Technology: Must be MOSFET (Metal Oxide)
  • Operating Temperature Range: Must support -55°C to 175°C

Secondary Compatibility Criteria:

  • Continuous Drain Current (Id): Minimum 120A at 25°C (within 92% of original 130A specification)
  • On-State Resistance (Rds On): Maximum 7mOhm at rated conditions (lower values acceptable)
  • Gate-Source Voltage (Vgs): Must support ±20V or greater
  • Power Dissipation: Minimum 250W (within 83% of original 300W specification)

Substitute parts meeting these criteria are electrically and mechanically compatible for direct replacement in the IRFS4310PBF application circuit.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (mOhm) Vgs Max (V) Power Diss. (W) Package Status
IRFS4310PBF Infineon 100 130 7 @ 75A, 10V ±20 300 D2PAK Discontinued
IRFS4310ZTRLPBF Infineon 100 120 6 @ 75A, 10V ±20 250 D2PAK Active
AOB410L Alpha & Omega 100 150 (Tc) 6.5 @ 20A, 10V ±25 333 TO-263 Active
BUK965R8-100E,118 Nexperia 100 120 5.8 @ 25A, 5V ±10 357 D2PAK Active
IXFA180N10T2 IXYS 100 180 6 @ 50A, 10V ±20 480 TO-263AA Active
IXTA160N10T IXYS 100 160 7 @ 25A, 10V ±30 430 TO-263AA Active
IXTA160N10T7 IXYS 100 160 7 @ 25A, 10V ±30 430 TO-263-7 Active
IXTA180N10T IXYS 100 180 6.4 @ 25A, 10V ±30 480 TO-263AA Active
IXTA180N10T7 IXYS 100 180 6.4 @ 25A, 10V ±30 480 TO-263-7 Active
PSMN009-100B,118 Nexperia 100 75 8.8 @ 25A, 10V ±20 230 D2PAK Active
PSMN5R6-100BS,118 Nexperia 100 100 5.6 @ 25A, 10V ±20 306 D2PAK Active

Engineering Selection Recommendations

Tier 1 - Direct Replacement (Recommended):

IRFS4310ZTRLPBF is the manufacturer-recommended substitute. This Infineon part maintains the same HEXFET series lineage, identical 100V Vdss rating, D2PAK package compatibility, and ±20V Vgs specification. The 120A continuous drain current represents a 7.7% reduction from the original 130A specification, and the 250W power dissipation represents a 16.7% reduction. These reductions are within acceptable engineering margins for most applications. The part is currently active in production with extensive inventory availability (27,580 units). RoHS3 compliance and MSL-1 moisture sensitivity rating match the original specification.

Tier 2 - Electrical Equivalents with Package Variants:

IXTA180N10T and IXTA180N10T7 (IXYS) provide superior current handling at 180A continuous drain current and 480W power dissipation. Both parts maintain 100V Vdss, N-Channel MOSFET technology, and -55°C to 175°C operating range. The TO-263AA and TO-263-7 packages are mechanically compatible with D2PAK footprints. The IXTA180N10T7 variant offers 52,560 units in stock. Gate-source voltage rating extends to ±30V, providing additional design margin.

Tier 3 - Current-Limited Alternatives:

PSMN5R6-100BS,118 (Nexperia) delivers 100A continuous drain current with superior on-state resistance of 5.6mOhm at 25A, 10V. This part is suitable for applications where the 130A specification can be reduced to 100A without circuit impact. The D2PAK package provides direct footprint compatibility. Power dissipation of 306W exceeds the original 300W specification.

Tier 4 - Automotive-Qualified Alternative:

BUK965R8-100E,118 (Nexperia) is AEC-Q101 qualified for automotive applications. The 120A continuous drain current and 357W power dissipation meet or exceed the original specification. The TrenchMOS technology and 5.8mOhm on-state resistance provide efficient switching characteristics. Gate-source voltage is limited to ±10V, which may restrict use in certain gate drive circuits.

Parts Not Recommended:

PSMN009-100B,118 provides only 75A continuous drain current, representing a 42.3% reduction from the original 130A specification. This part is suitable only for applications where current requirements can be significantly reduced.

Frequently Asked Questions (FAQ)

Q: Can IRFS4310ZTRLPBF directly replace IRFS4310PBF in existing circuit boards?

A: Yes. IRFS4310ZTRLPBF is the manufacturer-recommended substitute with identical D2PAK package pinout, 100V Vdss rating, and ±20V Vgs specification. The 120A continuous drain current (versus 130A original) and 250W power dissipation (versus 300W original) are within acceptable engineering margins for most applications. Verify that your circuit design does not depend on the maximum 130A specification before substitution.

Q: What is the difference between TO-263-3 and TO-263-7 packages?

A: TO-263-3 (D2PAK) contains 3 leads: Gate, Drain, and Source with a tab. TO-263-7 contains 7 leads with multiple gate and source connections for reduced inductance and improved thermal performance. Both packages are mechanically compatible with standard D2PAK footprints, but TO-263-7 parts (such as IXTA180N10T7) provide additional connection points. Verify PCB layout compatibility before selecting TO-263-7 variants.

Q: Are IXYS IXTA series parts compatible with the IRFS4310PBF footprint?

A: IXTA160N10T, IXTA180N10T, and their TO-263-7 variants use TO-263AA or TO-263-7 packages, which are mechanically compatible with D2PAK footprints. All parts maintain 100V Vdss, N-Channel MOSFET technology, and -55°C to 175°C operating range. However, verify that your PCB layout accommodates the specific lead configuration of the selected variant. IXTA180N10T7 offers higher current capacity (180A) and power dissipation (480W) compared to the original specification.

Q: Does BUK965R8-100E,118 require different gate drive circuitry?

A: BUK965R8-100E,118 has a maximum Vgs of ±10V, compared to ±20V for IRFS4310PBF. If your gate drive circuit supplies ±20V, the BUK965R8-100E,118 will not accept the full voltage range. Verify that your gate drive circuit can operate within ±10V limits before substitution. The lower Vgs(th) of 2.1V @ 1mA may also affect switching speed compared to the original 4V @ 250µA specification.

Q: What is the inventory status of substitute parts?

A: IRFS4310ZTRLPBF has 27,580 units in stock (recommended first choice). IXTA180N10T7 has 52,560 units in stock (highest availability). IXTA180N10T has 2,396 units. AOB410L has 33,662 units. PSMN5R6-100BS,118 has 4,190 units. BUK965R8-100E,118 has 4,112 units. IXTA160N10T has 861 units. PSMN009-100B,118 has 738 units. Verify current inventory before finalizing procurement decisions.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts carry RoHS3 compliance certification. All parts are also REACH Unaffected and classified as EAR99 for export control purposes. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts except AOB410L, which does not specify MSL rating.

Q: Can I use AOB410L as a direct replacement?

A: AOB410L is electrically compatible with 100V Vdss and N-Channel MOSFET technology. However, the continuous drain current specification is listed as 12A (Ta) and 150A (Tc), with power dissipation of 1.9W (Ta) and 333W (Tc). The dual rating structure differs from the original IRFS4310PBF specification. The TO-263 (D2PAK) package is compatible. Verify that your application can operate within the AOB410L thermal and current specifications before substitution.

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