IRFS4228TRLPBF N-Channel 150V 83A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFS4228TRLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 150V drain-to-source voltage with 83A continuous drain current at 25°C. This device is housed in a D2PAK (TO-263) surface mount package and is designed for high-current switching applications requiring 330W maximum power dissipation. The part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, production continuity, and system maintenance.

Substiute Parts

IRFS4228TRLPBF

Infineon TechnologiesIn Stock: 3741IRFS4228TRLPBF Datasheet

Current PartRFQ

SQM85N15-19_GE3

Vishay SiliconixIn Stock: 2224SQM85N15-19_GE3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFS4228TRLPBF is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 150V
• Continuous Drain Current (Id): Must equal or exceed 83A at 25°C
• On-State Resistance (Rds On): Must be compatible with the application's thermal and switching requirements
• Gate Threshold Voltage (Vgs(th)): Must fall within acceptable control voltage ranges
• Maximum Gate Voltage (Vgs): Must accommodate the drive circuit specifications
• Operating Temperature Range: Must support the full -40°C to 175°C operating envelope

Mechanical Equivalence Criteria:

• Package Type: D2PAK (TO-263-3) surface mount configuration
• Mounting Type: Surface mount compatibility with existing PCB layouts
• Lead configuration: 2 leads plus tab (TO-263AB standard)

The substitute part SQM85N15-19_GE3 meets these criteria with equivalent voltage ratings, comparable current handling, and identical package geometry, enabling direct functional replacement in the circuit.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: SQM85N15-19_GE3

The SQM85N15-19_GE3 is the recommended substitute for the obsolete IRFS4228TRLPBF based on the following engineering factors:

Product Status Alignment: The SQM85N15-19_GE3 is classified as Active, ensuring ongoing availability, manufacturing support, and supply chain continuity. This addresses the critical limitation of the IRFS4228TRLPBF's obsolete status.

Electrical Compatibility: Both devices share identical 150V drain-to-source voltage ratings and comparable continuous drain current specifications (83A versus 85A). The SQM85N15-19_GE3 exceeds the power dissipation requirement (375W versus 330W), providing thermal margin. The on-state resistance differential (19mOhm versus 15mOhm) represents a 4mOhm increase, which must be evaluated against the specific application's thermal budget and switching losses.

Mechanical Compatibility: Both devices utilize the D2PAK (TO-263-3) surface mount package with identical lead configuration (2 leads plus tab). Direct PCB layout compatibility is maintained without redesign.

Compliance and Certifications: Both parts carry identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications. The SQM85N15-19_GE3 is RoHS3 compliant, meeting current environmental standards. Both devices maintain MSL 1 (Unlimited) moisture sensitivity ratings.

Operating Temperature: The SQM85N15-19_GE3 extends the minimum operating temperature to -55°C, providing enhanced low-temperature performance compared to the -40°C minimum of the IRFS4228TRLPBF.

Design Considerations: The SQM85N15-19_GE3 exhibits a lower gate threshold voltage (3.5V versus 5V) and reduced maximum gate voltage rating (±20V versus ±30V). Gate drive circuits must be verified for compatibility with these specifications. The increased input capacitance (6285pF versus 4530pF) and gate charge (120nC versus 107nC) may require adjustment to gate drive timing and current delivery.

Frequently Asked Questions (FAQ)

Q: Can the SQM85N15-19_GE3 be used as a direct replacement for the IRFS4228TRLPBF without circuit modifications?

A: The SQM85N15-19_GE3 is mechanically and electrically compatible for most applications. However, the gate drive circuit must be verified for compatibility with the lower gate threshold voltage (3.5V versus 5V) and reduced maximum gate voltage (±20V versus ±30V). The increased gate charge and input capacitance may require adjustment to gate driver timing and current specifications.

Q: What is the significance of the on-state resistance difference between these two devices?

A: The IRFS4228TRLPBF has 15mOhm on-state resistance while the SQM85N15-19_GE3 has 19mOhm. This 4mOhm difference results in increased conduction losses. For applications with high continuous current operation, thermal analysis must confirm that the SQM85N15-19_GE3's higher power dissipation rating (375W versus 330W) provides sufficient margin for the application's duty cycle and thermal environment.

Q: Are the package dimensions identical between these two devices?

A: Both devices use the D2PAK (TO-263-3) surface mount package with identical lead configuration (2 leads plus tab). PCB footprints and thermal pad layouts are compatible, enabling direct physical replacement without layout redesign.

Q: What is the impact of the increased input capacitance in the SQM85N15-19_GE3?

A: The SQM85N15-19_GE3 has 6285pF input capacitance compared to 4530pF in the IRFS4228TRLPBF. This 1755pF increase requires higher gate drive current to achieve the same switching speed. Gate driver selection and timing must be re-evaluated to ensure adequate current delivery and acceptable switching frequency performance.

Q: Does the extended operating temperature range of the SQM85N15-19_GE3 provide any advantage?

A: The SQM85N15-19_GE3 operates from -55°C to 175°C, compared to -40°C to 175°C for the IRFS4228TRLPBF. This extended low-temperature range provides enhanced performance in cold-environment applications. Both devices maintain the same maximum operating temperature of 175°C.

Q: Are there compliance or regulatory differences between these two devices?

A: Both devices carry identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications and MSL 1 (Unlimited) moisture sensitivity ratings. The SQM85N15-19_GE3 is RoHS3 compliant, meeting current environmental standards. No regulatory barriers exist to substitution.

Q: What is the difference between the HEXFET® and TrenchFET® technology designations?

A: The IRFS4228TRLPBF uses HEXFET® technology (Infineon), while the SQM85N15-19_GE3 uses TrenchFET® technology (Vishay Siliconix). Both are MOSFET (Metal Oxide) technologies. The electrical performance parameters provided in the datasheets determine functional compatibility, not the technology designation.

Q: Can the SQM85N15-19_GE3 handle the same current levels as the IRFS4228TRLPBF?

A: The SQM85N15-19_GE3 is rated for 85A continuous drain current at 25°C, compared to 83A for the IRFS4228TRLPBF. This 2A increase provides slight additional current margin. Both devices are suitable for equivalent current-handling applications within their respective ratings.