IRFS4228PBF N-Channel 150V 83A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFS4228PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 150V drain-to-source voltage with 83A continuous drain current at 25°C case temperature. This device is packaged in D2PAK (TO-263-3) surface mount configuration and is designed for high-current switching applications requiring efficient power dissipation up to 330W at case temperature.

The IRFS4228PBF carries an Obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this MOSFET.

Substiute Parts

IRFS4228PBF

Infineon TechnologiesIn Stock: 2368IRFS4228PBF Datasheet

Current PartRFQ

FDB2532

onsemiIn Stock: 28809FDB2532 Datasheet

MFR RecommendedRFQ

SQM85N15-19_GE3

Vishay SiliconixIn Stock: 2224SQM85N15-19_GE3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFS4228PBF is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain-to-Source Voltage (Vdss): 150V (exact match required)
• Package Type: D2PAK (TO-263-3) surface mount configuration (exact match required)
• Continuous Drain Current (Id): Minimum 83A at case temperature (equal or greater acceptable)
• On-State Resistance (Rds On): Performance characteristic at specified gate voltage
• Power Dissipation Capability: Minimum 330W at case temperature (equal or greater acceptable)
• Operating Temperature Range: Minimum -40°C to 175°C (equal or wider acceptable)
• RoHS Compliance: ROHS3 Compliant (matching compliance required)

The substitute parts listed below meet all critical matching parameters and are qualified as direct functional replacements within the specified electrical and thermal operating envelope.

Parameter Comparison

Engineering Selection Recommendations

FDB2532 (onsemi): The FDB2532 is an Active product with continuous drain current of 79A at case temperature, which is within 5% of the IRFS4228PBF specification. Power dissipation is rated at 310W, which is 6% lower than the main part. This substitute is suitable for applications where the 79A current rating and 310W dissipation envelope are acceptable. The FDB2532 maintains identical gate charge (107 nC) and identical package configuration. Extended operating temperature range (-55°C to 175°C) provides additional thermal margin. ROHS3 compliance is maintained.

SQM85N15-19_GE3 (Vishay Siliconix): The SQM85N15-19_GE3 is an Active product with continuous drain current of 85A at case temperature, which exceeds the IRFS4228PBF specification by 2.4%. Power dissipation is rated at 375W, which is 13.6% higher than the main part, providing additional thermal headroom. On-state resistance is 19 mOhm at 30A and 10V, representing a 26.7% increase compared to the main part specification. Gate charge is 120 nC, which is 12.1% higher than the main part. Extended operating temperature range (-55°C to 175°C) is provided. ROHS3 compliance is maintained.

Both substitute parts are qualified as direct functional replacements based on matching Vdss (150V), identical D2PAK package configuration, and compliance certifications. Selection between substitutes depends on application-specific requirements for current capacity, power dissipation margin, and on-state resistance performance.

Frequently Asked Questions (FAQ)

Q: Can the FDB2532 be used as a direct replacement for the IRFS4228PBF?

A: The FDB2532 meets the critical substitution criteria: 150V Vdss rating, D2PAK package configuration, and ROHS3 compliance. The continuous drain current is 79A compared to 83A, representing a 4.8% reduction. Power dissipation is 310W compared to 330W, representing a 6.1% reduction. Substitution is valid when the application current and thermal requirements do not exceed the FDB2532 specifications.

Q: What is the primary difference between the FDB2532 and SQM85N15-19_GE3?

A: Both parts share the same 150V Vdss rating and D2PAK package. The SQM85N15-19_GE3 provides higher continuous drain current (85A versus 79A) and higher power dissipation capability (375W versus 310W). The FDB2532 has lower on-state resistance (16 mOhm versus 19 mOhm at specified conditions) and lower gate charge (107 nC versus 120 nC). Selection depends on whether the application prioritizes current capacity and thermal margin (SQM85N15-19_GE3) or lower conduction losses (FDB2532).

Q: Are both substitute parts available in the same packaging format as the IRFS4228PBF?

A: Yes. Both the FDB2532 and SQM85N15-19_GE3 are supplied in D2PAK (TO-263-3) surface mount package configuration, identical to the IRFS4228PBF. This ensures mechanical and thermal interface compatibility with existing PCB designs.

Q: What is the significance of the Obsolete status for the IRFS4228PBF?

A: Obsolete status indicates that the IRFS4228PBF is no longer manufactured by Infineon Technologies. Both substitute parts carry Active product status, ensuring ongoing availability, technical support, and supply chain continuity for new production and design updates.

Q: Do the substitute parts maintain RoHS compliance?

A: Yes. Both the FDB2532 and SQM85N15-19_GE3 are ROHS3 Compliant, matching the environmental compliance requirement of the IRFS4228PBF.

Q: What operating temperature range is provided by the substitute parts?

A: Both substitute parts extend the operating temperature range to -55°C to 175°C (junction temperature), compared to the IRFS4228PBF range of -40°C to 175°C. This provides additional low-temperature operational margin.