IRFS41N15DPBF N-Channel 150V 41A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFS41N15DPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 150V drain-to-source voltage with 41A continuous drain current at 25°C. This device is packaged in D2PAK (TO-263-3) surface mount configuration and is part of the HEXFET® series. The part is currently discontinued at DiGi Electronics, making equivalent and substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	150	V
Continuous Drain Current (Id) @ 25°C	41	A (Tc)
On-State Resistance (Rds On) @ 25A, 10V	45	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5.5	V
Gate Charge (Qg) @ 10V	110	nC
Input Capacitance (Ciss) @ 25V	2520	pF
Power Dissipation (Max)	3.1	W (Ta)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IRFS41N15DPBF is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain the 150V Vdss minimum specification to ensure safe operation in the original circuit application.

Current Capability: Substitute parts must provide continuous drain current (Id) at or above 41A at 25°C to meet or exceed the original performance envelope.

On-State Resistance (Rds On): The on-state resistance at specified gate voltage and current determines power dissipation characteristics. Substitute parts with lower Rds On values provide improved efficiency.

Package Compatibility: All listed substitutes use D2PAK (TO-263-3) surface mount packaging, ensuring mechanical and thermal interface compatibility.

Temperature Range: Operating temperature range must support the -55°C to 175°C specification or equivalent.

Compliance: All substitute parts maintain ROHS3 compliance and EAR99 export classification consistent with the original part.

The following substitute parts meet these criteria with varying performance characteristics and availability status.

Parameter Comparison

Parameter	IRFS41N15DPBF	IRF3415STRLPBF	IRFS4228PBF	AOB254L	IXTA42N15T	STB75NF20
Manufacturer	Infineon	Infineon	Infineon	Alpha & Omega	IXYS	STMicroelectronics
Vdss (V)	150	150	150	150	150	200
Id @ 25°C (A)	41 (Tc)	43 (Tc)	83 (Tc)	32 (Tc)	42 (Tc)	75 (Tc)
Rds On @ 10V (mOhm)	45 @ 25A	42 @ 22A	15 @ 33A	46 @ 20A	45 @ 21A	34 @ 37A
Vgs(th) @ 250µA (V)	5.5	4	5	2.7	4.5	4
Qg @ 10V (nC)	110	200	107	40	21	84
Ciss @ 25V (pF)	2520	2400	4530	2150	1880	3260
Power Dissipation (W)	3.1 (Ta)	3.8 (Ta)	330 (Tc)	2.1 (Ta)	200 (Tc)	190 (Tc)
Operating Temp (°C)	-55 to 175	-55 to 175	-40 to 175	-55 to 175	-55 to 175	-50 to 150
Package	D2PAK	D2PAK	D2PAK	TO-263	TO-263	D2PAK
Product Status	Discontinued	Active	Obsolete	Active	Active	Active
RoHS Status	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3

Engineering Selection Recommendations

Primary Substitute - IRF3415STRLPBF (Infineon Technologies): The IRF3415STRLPBF is the recommended direct substitute. It maintains 150V Vdss rating with 43A continuous drain current, exceeding the original 41A specification. On-state resistance of 42 mOhm at 22A is comparable to the original 45 mOhm specification. Product status is Active, ensuring long-term availability. ROHS3 compliance and identical D2PAK packaging provide seamless integration. Gate charge of 200 nC is higher than the original 110 nC, which may affect switching speed in high-frequency applications.

Alternative Substitute - IXTA42N15T (IXYS): The IXTA42N15T provides 42A continuous drain current at 150V Vdss with 45 mOhm on-state resistance at 21A. Product status is Active with confirmed availability. This part features significantly lower gate charge (21 nC versus 110 nC), resulting in faster switching characteristics. Operating temperature range matches the original specification (-55°C to 175°C). TO-263 packaging is mechanically equivalent to D2PAK.

High-Current Alternative - IRFS4228PBF (Infineon Technologies): The IRFS4228PBF offers substantially higher current capability at 83A continuous drain current with superior on-state resistance of 15 mOhm at 33A. This part is suitable for applications requiring higher current headroom or lower power dissipation. Product status is Obsolete; verify availability before design commitment. Operating temperature minimum is -40°C, which is 15°C higher than the original specification.

Lower-Current Alternative - AOB254L (Alpha & Omega Semiconductor Inc.): The AOB254L provides 32A continuous drain current at 150V Vdss with 46 mOhm on-state resistance. Product status is Active with high inventory availability. This part features the lowest gate charge (40 nC) among all substitutes, enabling fastest switching response. Vgs(th) is significantly lower at 2.7V, which may require gate drive circuit verification for compatibility.

Higher-Voltage Alternative - STB75NF20 (STMicroelectronics): The STB75NF20 operates at 200V Vdss with 75A continuous drain current and 34 mOhm on-state resistance. This part is suitable only for applications where higher voltage margin is required or beneficial. Product status is Active. Operating temperature range is -50°C to 150°C, which does not meet the original -55°C minimum specification. Vgs(Max) is ±20V versus ±30V for the original part.

Frequently Asked Questions (FAQ)

Q: Can I use IRF3415STRLPBF as a direct replacement for IRFS41N15DPBF?

A: Yes. Both parts maintain 150V Vdss rating, D2PAK packaging, and comparable on-state resistance. IRF3415STRLPBF provides 43A continuous current, exceeding the original 41A specification. Both are ROHS3 compliant with identical operating temperature range (-55°C to 175°C). The primary difference is gate charge (200 nC versus 110 nC), which affects switching speed but does not prevent direct substitution in most applications.

Q: What is the difference between IXTA42N15T and IRFS41N15DPBF?

A: Both parts are rated for 150V Vdss and approximately 41-42A continuous drain current with similar on-state resistance (45 mOhm). The IXTA42N15T features significantly lower gate charge (21 nC versus 110 nC), enabling faster switching transitions. IXTA42N15T uses TO-263 packaging, which is mechanically equivalent to D2PAK. IXTA42N15T is manufactured by IXYS using Trench technology, while IRFS41N15DPBF is Infineon HEXFET® technology.

Q: Why is IRFS4228PBF listed as Obsolete?

A: IRFS4228PBF is marked Obsolete by the manufacturer, indicating it is no longer in active production. While inventory may be available through distributors, long-term supply cannot be guaranteed. This part should be used only when higher current capability (83A) or lower on-state resistance (15 mOhm) is specifically required and alternative parts do not meet application needs.

Q: Can I use STB75NF20 in place of IRFS41N15DPBF?

A: STB75NF20 is not recommended as a direct substitute. While it provides higher current capability (75A) and lower on-state resistance (34 mOhm), it operates at 200V Vdss, which is above the original 150V specification. Additionally, the operating temperature range (-50°C to 150°C) does not meet the original -55°C minimum requirement. Use STB75NF20 only when higher voltage rating is required by the application.

Q: What does gate charge (Qg) mean for substitution?

A: Gate charge represents the total charge required to switch the MOSFET from off to on state. Lower gate charge (such as IXTA42N15T at 21 nC) enables faster switching with lower gate drive power requirements. Higher gate charge (such as IRF3415STRLPBF at 200 nC) requires more charge transfer but does not prevent substitution. Gate drive circuit design may require adjustment when substituting parts with significantly different gate charge values.

Q: Are all substitute parts available in the same packaging?

A: All substitute parts use D2PAK or TO-263 surface mount packaging, which are mechanically and thermally equivalent. Pin configuration and lead spacing are identical, enabling direct PCB footprint compatibility without layout modification.

Q: What is the significance of Vgs(th) differences between parts?

A: Gate threshold voltage (Vgs(th)) determines the minimum gate voltage required to begin conducting. Lower Vgs(th) (such as AOB254L at 2.7V) enables operation with lower gate drive voltages. Higher Vgs(th) (such as IRFS41N15DPBF at 5.5V) requires higher gate drive voltage. Verify gate drive circuit capability when substituting parts with significantly different Vgs(th) values.

Q: Which substitute part has the best on-state resistance performance?

A: IRFS4228PBF provides the lowest on-state resistance at 15 mOhm at 33A, resulting in the lowest power dissipation. However, this part is Obsolete. Among Active products, STB75NF20 offers 34 mOhm at 37A. For 150V Vdss parts, IRF3415STRLPBF and IXTA42N15T both provide 42-45 mOhm performance comparable to the original specification.

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