IRFS4127PBF N-Channel MOSFET 200V 72A Equivalent & Substitute Parts

Part Overview

The IRFS4127PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 200V drain-to-source voltage with 72A continuous drain current at 25°C. This device is housed in a D2PAK surface mount package and is part of the HEXFET® series. The part is currently discontinued at DiGi Electronics, making equivalent substitutes necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	72	A
On-State Resistance (Rds On Max) @ 44A, 10V	22	mOhm
Gate Threshold Voltage (Vgs th) @ 250µA	5	V
Gate Charge (Qg) @ 10V	150	nC
Power Dissipation (Max)	375	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)
Mounting Type	Surface Mount

Substitute Part Grouping Explanation

Substitution of the IRFS4127PBF is determined by the following critical parameters:

Mandatory Matching Criteria:

Drain-to-Source Voltage (Vdss): 200V minimum
Package Type: D2PAK (TO-263-3) surface mount
FET Type: N-Channel MOSFET
Mounting: Surface mount configuration

Performance Compatibility Criteria:

Continuous Drain Current (Id): Equal to or greater than 72A
On-State Resistance (Rds On): Lower or equal values preferred for thermal performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Adequate thermal handling capability
Operating Temperature Range: Minimum -55°C to 175°C overlap

The three substitute parts listed below meet the mandatory matching criteria and provide functional equivalence within the specified electrical and thermal parameters.

Parameter Comparison

Parameter	IRFS4127PBF	PSMN057-200B,118	STB75NF20	STB80N20M5	Unit
Manufacturer	Infineon Technologies	Nexperia USA Inc.	STMicroelectronics	STMicroelectronics
Vdss	200	200	200	200	V
Id @ 25°C	72	39	75	61	A
Rds On (Max) @ 10V	22 @ 44A	57 @ 17A	34 @ 37A	23 @ 30.5A	mOhm
Vgs(th) @ Id	5 @ 250µA	4 @ 1mA	4 @ 250µA	5 @ 250µA	V
Gate Charge (Qg) @ 10V	150	96	84	104	nC
Power Dissipation (Max)	375	250	190	190	W
Operating Temperature	-55 to 175	-55 to 175	-50 to 150	-55 to 150	°C
Package	D2PAK	D2PAK	D2PAK	D2PAK
Series	HEXFET®	TrenchMOS™	STripFET™	MDmesh™ V
Product Status	Discontinued	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

PSMN057-200B,118 (Nexperia USA Inc.)

This substitute is manufacturer-recommended and carries active product status. It maintains 200V Vdss rating and D2PAK packaging. The continuous drain current of 39A is lower than the original 72A specification. This part is suitable for applications where the required current does not exceed 39A. The lower gate charge (96 nC) and reduced power dissipation (250W) indicate improved switching efficiency. ROHS3 compliance and unlimited moisture sensitivity level (MSL 1) match the original part specifications.

STB75NF20 (STMicroelectronics)

This substitute provides 75A continuous drain current, exceeding the original 72A rating. The 200V Vdss and D2PAK package are identical to the original. The on-state resistance of 34 mOhm at 37A is higher than the original 22 mOhm at 44A, resulting in increased conduction losses. Gate charge is reduced to 84 nC, providing switching efficiency benefits. Power dissipation is rated at 190W, lower than the original 375W. Operating temperature range is -50°C to 150°C, which does not fully overlap the original -55°C to 175°C range. ROHS3 compliance is maintained.

STB80N20M5 (STMicroelectronics)

This substitute provides 61A continuous drain current, which is lower than the original 72A but suitable for many applications. The 200V Vdss and D2PAK package match the original specifications. On-state resistance is 23 mOhm at 30.5A, closely matching the original 22 mOhm performance. Gate charge of 104 nC is moderate. Power dissipation is 190W. Operating temperature range is -55°C to 150°C, with the upper limit 25°C below the original specification. ROHS3 compliance is maintained. Maximum gate voltage is ±25V, exceeding the original ±20V specification.

All three substitutes are ROHS3 compliant, carry unlimited moisture sensitivity level (MSL 1), and are classified as REACH Unaffected with EAR99 ECCN designation, matching the original part's regulatory status.

Frequently Asked Questions (FAQ)

Q: Can PSMN057-200B,118 replace IRFS4127PBF in all applications?

A: PSMN057-200B,118 is suitable only for applications where the required continuous drain current does not exceed 39A. If your circuit requires the full 72A capability of the original part, this substitute is not appropriate. Verify your actual current requirements before selection.

Q: What is the primary difference between STB75NF20 and STB80N20M5?

A: STB75NF20 provides higher continuous drain current (75A versus 61A) but has higher on-state resistance (34 mOhm versus 23 mOhm). STB80N20M5 has lower on-state resistance, closer to the original part's performance. STB75NF20 has a lower maximum operating temperature (150°C versus 150°C for STB80N20M5, but both are below the original 175°C). Select based on your specific current and thermal requirements.

Q: Are all substitutes pin-compatible with IRFS4127PBF?

A: Yes. All three substitutes use the D2PAK (TO-263-3) package with identical pinout: Gate, Drain, and Source connections. Direct PCB footprint compatibility is confirmed.

Q: Do the substitutes maintain the same gate drive voltage requirements?

A: All substitutes operate with 10V drive voltage for maximum on-state resistance specification, matching the original part. Gate threshold voltages are similar (4V to 5V range), ensuring compatible gate drive circuits.

Q: What is the impact of lower power dissipation ratings in the substitutes?

A: The substitutes (190W to 250W) have lower power dissipation ratings than the original (375W). This reflects different thermal design approaches and does not necessarily indicate reduced performance. Verify that your thermal management design accommodates the substitute's power dissipation characteristics.

Q: Are there temperature range limitations with the substitutes?

A: STB75NF20 and STB80N20M5 have maximum operating temperatures of 150°C, compared to the original 175°C. If your application requires operation above 150°C, these substitutes are not suitable. PSMN057-200B,118 maintains the full -55°C to 175°C range.

Q: How do gate charge differences affect circuit performance?

A: Lower gate charge (84 nC to 96 nC in substitutes versus 150 nC in original) reduces switching losses and allows faster switching transitions. This generally improves efficiency but requires verification that your gate drive circuit can supply the necessary charge within acceptable time frames.

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