IRFS4115PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFS4115PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 150V drain-to-source voltage with 195A continuous drain current at 25°C. This device is housed in a D2PAK (TO-263-3) surface mount package and is designed for high-current switching applications requiring robust thermal performance up to 375W at the case temperature. The part is currently discontinued at DiGi Electronics, making equivalent and substitute parts necessary for ongoing design support and procurement.

Substiute Parts

IRFS4115PBF

Infineon TechnologiesIn Stock: 5954IRFS4115PBF Datasheet

Current PartRFQ

IPB50N10S3L16ATMA1

Infineon TechnologiesIn Stock: 3391IPB50N10S3L16ATMA1 Datasheet

MFR RecommendedRFQ

FDB2532

onsemiIn Stock: 28809FDB2532 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFS4115PBF is determined by the following critical parameters:

Voltage Rating (Vdss): The substitute must support a minimum of 150V drain-to-source voltage to maintain circuit protection margins and ensure safe operation in the intended application.

Current Capability (Id): The substitute must deliver sufficient continuous drain current at 25°C to handle the application load. Devices with lower current ratings may require circuit redesign or thermal management adjustments.

On-State Resistance (Rds On): Lower Rds On values reduce conduction losses and heat generation. Substitutes with higher Rds On values will increase power dissipation and may require enhanced thermal management.

Package Compatibility: The D2PAK (TO-263-3) surface mount package is the standard form factor. Substitutes must use the same package to ensure PCB layout compatibility without redesign.

Temperature Range: Operating temperature range must match or exceed -55°C to 175°C (TJ) to ensure reliability across the full application environment.

Compliance: RoHS3 compliance and REACH unaffected status are mandatory for regulatory adherence.

Parameter Comparison

Engineering Selection Recommendations

FDB2532 (onsemi): This substitute maintains the 150V voltage rating and D2PAK package compatibility with the IRFS4115PBF. The FDB2532 delivers 79A continuous drain current at 25°C (case temperature), which is lower than the original 195A rating. This device is suitable for applications where the current requirement does not exceed 79A. The on-state resistance of 16 mOhm at 33A, 10V is slightly higher than the original, resulting in marginally increased conduction losses. Power dissipation is rated at 310W (Tc), which is lower than the original 375W. The FDB2532 is currently active in production with full RoHS3 compliance and REACH unaffected status.

IPB50N10S3L16ATMA1 (Infineon Technologies): This substitute is an active production device from the same manufacturer as the original part. However, it features a reduced voltage rating of 100V, which is below the 150V specification of the IRFS4115PBF. This device is not suitable as a direct substitute for applications requiring 150V operation. The IPB50N10S3L16ATMA1 is appropriate only for circuits designed for 100V maximum drain-to-source voltage. Current capability is 50A (Tc), significantly lower than the original 195A. This device maintains D2PAK package compatibility and full RoHS3 compliance.

Substitution Priority: The FDB2532 is the primary substitute for the discontinued IRFS4115PBF when voltage and current requirements align with its specifications. Applications requiring the full 195A current capability or 150V operation with higher power dissipation margins may require circuit redesign or alternative component selection outside the provided substitute list.

Frequently Asked Questions (FAQ)

Q: Can the IPB50N10S3L16ATMA1 replace the IRFS4115PBF in my circuit?

A: The IPB50N10S3L16ATMA1 has a maximum drain-to-source voltage rating of 100V, while the IRFS4115PBF is rated for 150V. If your circuit operates at voltages above 100V, this substitute will not provide adequate voltage protection and may fail. Use this device only in applications designed for 100V maximum operation.

Q: What is the current limitation when using the FDB2532 as a substitute?

A: The FDB2532 is rated for 79A continuous drain current at 25°C (case temperature), compared to the original IRFS4115PBF rating of 195A. If your application requires current above 79A, the FDB2532 will not meet performance requirements. Verify that your circuit current demand does not exceed 79A before selecting this substitute.

Q: Are all substitute parts in the same D2PAK package?

A: Yes. Both the FDB2532 and IPB50N10S3L16ATMA1 use the D2PAK (TO-263-3) surface mount package, identical to the IRFS4115PBF. No PCB layout modifications are required for package compatibility.

Q: Do the substitute parts meet RoHS and REACH compliance?

A: Yes. Both the FDB2532 and IPB50N10S3L16ATMA1 are ROHS3 compliant and REACH unaffected, matching the compliance status of the original IRFS4115PBF.

Q: How does on-state resistance affect my circuit performance?

A: On-state resistance (Rds On) directly determines conduction losses and heat generation. The FDB2532 has a Rds On of 16 mOhm at 33A, 10V, compared to 12.1 mOhm for the original part. Higher Rds On increases power dissipation. Calculate total circuit losses to ensure thermal management remains adequate with the substitute device.

Q: What is the gate charge difference between these devices?

A: Gate charge affects switching speed and driver circuit requirements. The IRFS4115PBF has 120 nC gate charge at 10V, the FDB2532 has 107 nC, and the IPB50N10S3L16ATMA1 has 64 nC. Lower gate charge enables faster switching but may require driver circuit verification to ensure compatibility.