IRFS4020TRLPBF N-Channel MOSFET 200V 18A Equivalent & Substitute Parts

Part Overview

The IRFS4020TRLPBF is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by Infineon Technologies, rated for 200V drain-to-source voltage with 18A continuous drain current at 25°C. The device is housed in a D2PAK (TO-263-3) surface mount package and is designed for high-efficiency switching applications requiring moderate power dissipation up to 100W at the case temperature. The part maintains Active product status and is ROHS3 compliant with unlimited moisture sensitivity level (MSL 1). Equivalent and substitute parts are identified to provide design flexibility when the primary part is unavailable or when alternative sourcing is required while maintaining electrical and mechanical compatibility within specified parameter tolerances.

Substiute Parts

IRFS4020TRLPBF

Infineon TechnologiesIn Stock: 16100IRFS4020TRLPBF Datasheet

Current PartRFQ

FQB19N20TM

onsemiIn Stock: 1814FQB19N20TM Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRFS4020TRLPBF are identified based on strict electrical and mechanical parameter compatibility within the N-Channel MOSFET category. The substitution criteria are established on the following key parameters:

Electrical Compatibility Parameters:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 200V
• Continuous Drain Current (Id): Must meet or exceed 18A at 25°C
• On-State Resistance (Rds On): Must not significantly exceed the specified maximum to maintain switching efficiency
• Gate Threshold Voltage (Vgs(th)): Must fall within acceptable operating range for gate drive circuits
• Maximum Gate Voltage (Vgs Max): Must accommodate ±20V or greater
• Operating Temperature Range: Must support -55°C to 175°C or equivalent thermal envelope

Mechanical Compatibility Parameters:

• Package Type: D2PAK (TO-263-3) surface mount configuration
• Pin Configuration: 2 Leads + Tab arrangement
• Mounting Type: Surface Mount

Compliance Parameters:

• RoHS Status: ROHS3 Compliant
• Moisture Sensitivity Level: MSL 1 (Unlimited)
• Product Status: Active

The FQB19N20TM from onsemi qualifies as a substitute based on matching Vdss (200V), exceeding Id specification (19.4A vs. 18A), maintaining D2PAK package compatibility, and meeting all compliance requirements. Variations in Rds On, gate charge, and input capacitance remain within acceptable engineering tolerances for direct substitution in switching applications.

Parameter Comparison

Engineering Selection Recommendations

Primary Part Selection (IRFS4020TRLPBF): The IRFS4020TRLPBF remains the preferred choice when available due to lower on-state resistance (105 mOhm vs. 150 mOhm), reduced gate charge (29 nC vs. 40 nC), and extended upper operating temperature limit (175°C vs. 150°C). These characteristics provide superior switching efficiency and thermal margin in high-frequency applications. The part is ROHS3 compliant with Active product status and unlimited moisture sensitivity rating, ensuring long-term supply chain stability and manufacturing compatibility.

Substitute Part Selection (FQB19N20TM): The FQB19N20TM from onsemi qualifies as a direct substitute when the IRFS4020TRLPBF is unavailable. The substitute meets or exceeds all critical electrical specifications: matching 200V Vdss rating, exceeding 18A continuous drain current requirement with 19.4A capability, and providing higher maximum gate voltage tolerance (±30V vs. ±20V). The D2PAK package configuration is mechanically identical, enabling direct PCB footprint compatibility without layout modifications. Both parts maintain ROHS3 compliance and MSL 1 rating.

Application Considerations: Selection between these parts should account for the following factors derived from provided specifications:

• Switching Frequency: Applications operating above 100 kHz may benefit from the IRFS4020TRLPBF due to lower gate charge, reducing driver power dissipation.
• Thermal Environment: The IRFS4020TRLPBF supports continuous operation to 175°C junction temperature, providing 25°C additional margin over the FQB19N20TM (150°C maximum).
• On-State Power Loss: The IRFS4020TRLPBF exhibits 45 mOhm lower on-state resistance at comparable current levels, reducing conduction losses in high-current applications.
• Gate Drive Voltage: The FQB19N20TM accepts ±30V gate voltage, providing enhanced noise immunity in electrically noisy environments compared to the ±20V specification of the IRFS4020TRLPBF.

Both parts are suitable for direct substitution in switching power supplies, motor control circuits, and general-purpose DC-DC converter applications within the specified electrical and thermal operating ranges.

Frequently Asked Questions (FAQ)

Q: Can the FQB19N20TM be used as a direct replacement for the IRFS4020TRLPBF without PCB modifications?

A: Yes. Both devices utilize identical D2PAK (TO-263-3) surface mount packaging with 2 leads plus tab configuration. Pin assignments and footprint dimensions are compatible, enabling direct substitution without PCB layout changes. Electrical parameter differences (Rds On, gate charge, input capacitance) fall within acceptable tolerances for switching applications.

Q: What are the key electrical differences between these two parts?

A: The primary differences are on-state resistance (IRFS4020TRLPBF: 105 mOhm vs. FQB19N20TM: 150 mOhm), gate charge (29 nC vs. 40 nC), and maximum operating temperature (175°C vs. 150°C). The FQB19N20TM provides higher continuous drain current (19.4A vs. 18A) and greater maximum gate voltage tolerance (±30V vs. ±20V). Both parts meet the 200V Vdss and 18A minimum current requirements.

Q: How do differences in on-state resistance affect circuit performance?

A: On-state resistance directly determines conduction power loss according to P = I²R. The 45 mOhm difference between parts results in approximately 8.1W additional power dissipation at 18A continuous current in the FQB19N20TM. In thermally constrained applications, this may require enhanced heatsinking or derating of maximum current.

Q: Are both parts suitable for high-frequency switching applications?

A: The IRFS4020TRLPBF is preferred for frequencies above 100 kHz due to lower gate charge (29 nC), which reduces gate driver power dissipation and switching losses. The FQB19N20TM with 40 nC gate charge remains suitable for frequencies up to approximately 50 kHz without excessive driver loading.

Q: What is the significance of the ±30V maximum gate voltage on the FQB19N20TM versus ±20V on the IRFS4020TRLPBF?

A: The higher gate voltage rating on the FQB19N20TM provides additional safety margin against transient overvoltage events and allows operation with gate drive circuits designed for higher voltage levels. The IRFS4020TRLPBF's ±20V specification is adequate for standard gate drive implementations but offers less margin for noise-induced voltage spikes.

Q: Can these parts be used interchangeably in existing designs without circuit simulation or testing?

A: Direct substitution is permissible based on matching electrical specifications and package compatibility. However, designs operating near thermal or current limits should account for the FQB19N20TM's higher on-state resistance and lower maximum junction temperature. Gate drive circuits should verify compatibility with the FQB19N20TM's 40 nC gate charge versus the IRFS4020TRLPBF's 29 nC specification.

Q: What compliance certifications apply to both parts?

A: Both the IRFS4020TRLPBF and FQB19N20TM are ROHS3 compliant, REACH unaffected, and classified under ECCN EAR99. Both maintain MSL 1 (Unlimited) moisture sensitivity rating and Active product status, ensuring regulatory compliance and long-term availability for industrial and commercial applications.

Q: How do input capacitance differences impact circuit design?

A: The FQB19N20TM exhibits 400 pF higher input capacitance (1600 pF vs. 1200 pF), measured at different Vds conditions (25V vs. 50V). Higher input capacitance increases gate charge requirements and may slightly increase switching transition times. This difference is typically negligible in applications below 50 kHz switching frequency.