IRFS4020PBF N-Channel MOSFET 200V 18A Equivalent & Substitute Parts

Part Overview

The IRFS4020PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 200V drain-to-source voltage with 18A continuous drain current at 25°C. The device is housed in a D2PAK (TO-263-3) surface mount package and is designed for 100W power dissipation. This part is discontinued at DiGi Electronics, making equivalent substitutes necessary for ongoing design requirements and production continuity. Suitable alternatives must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while conforming to the same package specification.

Substiute Parts

IRFS4020PBF

Infineon TechnologiesIn Stock: 1477IRFS4020PBF Datasheet

Current PartRFQ

FQB19N20LTM

onsemiIn Stock: 5756FQB19N20LTM Datasheet

MFR RecommendedRFQ

FQB19N20TM

onsemiIn Stock: 1814FQB19N20TM Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRFS4020PBF is determined by the following critical parameters:

Mandatory Matching Criteria:

• Drain to Source Voltage (Vdss): 200V minimum
• Package Type: D2PAK (TO-263-3) surface mount configuration
• FET Type: N-Channel MOSFET
• Technology: Metal Oxide Semiconductor

Performance Compatibility Criteria:

• Continuous Drain Current (Id): Equal to or greater than 18A at 25°C
• Power Dissipation: Equal to or greater than 100W (Tc)
• Operating Temperature Range: Must encompass or exceed -55°C to 175°C
• On-State Resistance (Rds On): Lower or equivalent values ensure thermal performance

The substitute parts FQB19N20LTM and FQB19N20TM, both manufactured by onsemi, satisfy the mandatory matching criteria with equivalent or superior electrical performance characteristics. Both devices are rated for 200V Vdss, feature D2PAK packaging, and provide continuous drain currents exceeding the original specification.

Parameter Comparison

Engineering Selection Recommendations

FQB19N20LTM Selection: The FQB19N20LTM is an active product from onsemi's QFET® series, providing 21A continuous drain current and 140W power dissipation. This device exceeds the IRFS4020PBF current rating by 3A and power dissipation by 40W. The part is ROHS3 compliant with MSL 1 rating, matching the original specification. The maximum operating temperature is 150°C, which is 25°C lower than the IRFS4020PBF. This substitute is suitable for applications where the reduced upper temperature limit does not constrain system operation.

FQB19N20TM Selection: The FQB19N20TM is an active product from onsemi's QFET® series, providing 19.4A continuous drain current and 140W power dissipation. This device exceeds the IRFS4020PBF current rating by 1.4A and power dissipation by 40W. The part is ROHS3 compliant with MSL 1 rating, matching the original specification. The maximum gate voltage rating is ±30V, providing 10V additional margin compared to the IRFS4020PBF. The maximum operating temperature is 150°C, which is 25°C lower than the IRFS4020PBF. This substitute is suitable for applications where the reduced upper temperature limit does not constrain system operation.

Both substitute parts are currently in active production status with substantial inventory availability, ensuring supply chain continuity. Selection between FQB19N20LTM and FQB19N20TM depends on specific application requirements regarding current capacity and gate voltage tolerance.

Frequently Asked Questions (FAQ)

Q: Can the FQB19N20LTM or FQB19N20TM be used as direct replacements for the IRFS4020PBF?

A: Both onsemi devices are direct substitutes in terms of package type (D2PAK), voltage rating (200V), and current capacity (exceeding 18A). Electrical performance is compatible for applications operating within the specified parameter ranges. The primary design consideration is the reduced maximum operating temperature (150°C versus 175°C) of the substitute parts.

Q: What are the key differences between FQB19N20LTM and FQB19N20TM?

A: The FQB19N20LTM provides higher continuous drain current (21A versus 19.4A) and lower on-state resistance at rated conditions. The FQB19N20TM offers a higher maximum gate voltage rating (±30V versus ±20V). Both devices provide equivalent power dissipation (140W). Selection depends on whether the application prioritizes current capacity or gate voltage margin.

Q: Are the substitute parts RoHS and REACH compliant?

A: Both FQB19N20LTM and FQB19N20TM are ROHS3 compliant and REACH unaffected, matching the compliance status of the IRFS4020PBF.

Q: What is the moisture sensitivity level of the substitute parts?

A: Both substitute parts carry MSL 1 (Unlimited) rating, identical to the IRFS4020PBF, indicating no moisture sensitivity constraints during storage or handling.

Q: How do the on-state resistance values compare?

A: The IRFS4020PBF specifies 105 mOhm at 11A and 10V gate voltage. The FQB19N20LTM specifies 140 mOhm at 10.5A and 10V, while the FQB19N20TM specifies 150 mOhm at 9.7A and 10V. Higher on-state resistance in the substitute parts results in increased power dissipation at equivalent current levels. Thermal design calculations should account for this difference.

Q: What is the gate charge difference between the main part and substitutes?

A: The IRFS4020PBF specifies 29 nC gate charge at 10V. The FQB19N20LTM specifies 35 nC at 5V, and the FQB19N20TM specifies 40 nC at 10V. Higher gate charge increases driver circuit power consumption and switching time. Driver circuit design should be evaluated for compatibility with these values.

Q: Are there temperature derating considerations for the substitute parts?

A: The substitute parts operate to a maximum junction temperature of 150°C, compared to 175°C for the IRFS4020PBF. Applications requiring operation near the upper temperature limit of the original device must be re-evaluated with the reduced thermal ceiling of the substitute parts.