IRFS38N20DPBF N-Channel MOSFET 200V 43A Equivalent & Substitute Parts

Part Overview

The IRFS38N20DPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 200V drain-to-source voltage with 43A continuous drain current at 25°C. The device is housed in a D2PAK surface mount package and features a maximum on-resistance of 54mOhm at 26A, 10V gate-source voltage. This part is discontinued at DiGi Electronics, making equivalent and substitute parts necessary for ongoing design support and procurement.

The IRFS38N20DPBF belongs to the HEXFET® series and operates across a temperature range of -55°C to 175°C. With RoHS3 compliance and unlimited moisture sensitivity level (MSL 1), this component meets modern environmental and reliability standards.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	43	A (Tc)
On-Resistance (Rds On Max) @ 26A, 10V	54	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	91	nC
Input Capacitance (Ciss) @ 25V	2900	pF
Power Dissipation (Max)	3.8 (Ta), 300 (Tc)	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IRFS38N20DPBF is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a minimum Vdss of 200V to ensure safe operation in circuits designed for the original part. Parts with higher voltage ratings (250V) are acceptable as they provide additional margin.

Current Rating: The continuous drain current (Id) must be sufficient to handle the 43A requirement. Substitute parts with equal or higher current ratings are acceptable.

Package Compatibility: All substitute parts must use the D2PAK (TO-263-3) surface mount package to ensure mechanical and thermal compatibility with existing PCB layouts.

On-Resistance (Rds On): Lower on-resistance values indicate improved efficiency and reduced power dissipation. This parameter influences thermal performance but does not prevent substitution if other parameters are met.

Gate Charge and Input Capacitance: These parameters affect switching speed and gate drive requirements. Variations within the provided specifications do not prevent substitution.

Temperature Range: Operating temperature range must support the -55°C to 175°C specification or higher.

Compliance: All substitute parts must maintain RoHS3 compliance and MSL 1 rating.

Parameter Comparison

Parameter	IRFS38N20DPBF	IPB200N25N3GATMA1	PHB33NQ20T,118	PSMN057-200B,118	STB30NF20	STB40NF20
Manufacturer	Infineon	Infineon	Nexperia	Nexperia	STMicroelectronics	STMicroelectronics
Vdss (V)	200	250	200	200	200	200
Id @ 25°C (A)	43	64	32.7	39	30	40
Rds On Max (mOhm)	54 @ 26A, 10V	20 @ 64A, 10V	77 @ 15A, 10V	57 @ 17A, 10V	75 @ 15A, 10V	45 @ 20A, 10V
Vgs(th) (V)	5 @ 250µA	4 @ 270µA	4 @ 1mA	4 @ 1mA	4 @ 250µA	4 @ 250µA
Qg @ 10V (nC)	91	86	32.2	96	38	75
Ciss @ 25V (pF)	2900	7100 @ 100V	1870	3750	1597	2500
Power Dissipation Max (W)	300 (Tc)	300 (Tc)	230 (Tc)	250 (Tc)	125 (Tc)	160 (Tc)
Operating Temp Range (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 150	-55 to 150
Package	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK
Product Status	Discontinued	Active	Active	Active	Active	Active
RoHS Status	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3

Engineering Selection Recommendations

Primary Substitute: IPB200N25N3GATMA1 (Infineon OptiMOS™)

The IPB200N25N3GATMA1 is the manufacturer-recommended substitute from Infineon Technologies. It provides 250V Vdss (50V margin above the original 200V specification), 64A continuous drain current (21A above the 43A requirement), and significantly improved on-resistance of 20mOhm. This part maintains active product status, ROHS3 compliance, and the same D2PAK package. The higher voltage and current ratings provide design margin for thermal and electrical stress. Gate charge is comparable at 86nC versus 91nC.

Secondary Substitute: STB40NF20 (STMicroelectronics STripFET™)

The STB40NF20 offers 40A continuous drain current (within 3A of the original 43A specification) and maintains the 200V Vdss rating. On-resistance is 45mOhm at 20A, 10V, providing improved efficiency compared to the original 54mOhm specification. This part is actively manufactured, RoHS3 compliant, and uses the D2PAK package. Operating temperature range is -55°C to 150°C, which is 25°C lower than the original specification. Power dissipation is rated at 160W (Tc).

Tertiary Substitute: PSMN057-200B,118 (Nexperia TrenchMOS™)

The PSMN057-200B,118 provides 39A continuous drain current (4A below the original 43A specification) and maintains the 200V Vdss rating. On-resistance is 57mOhm at 17A, 10V. This part is actively manufactured, RoHS3 compliant, and uses the D2PAK package. Power dissipation is rated at 250W (Tc). Gate charge is 96nC, slightly higher than the original 91nC.

Alternative Substitute: PHB33NQ20T,118 (Nexperia TrenchMOS™)

The PHB33NQ20T,118 provides 32.7A continuous drain current (10.3A below the original 43A specification) and maintains the 200V Vdss rating. On-resistance is 77mOhm at 15A, 10V. This part is actively manufactured, RoHS3 compliant, and uses the D2PAK package. Power dissipation is rated at 230W (Tc). This option is suitable only for applications where the lower current rating is acceptable.

Alternative Substitute: STB30NF20 (STMicroelectronics STripFET™)

The STB30NF20 provides 30A continuous drain current (13A below the original 43A specification) and maintains the 200V Vdss rating. On-resistance is 75mOhm at 15A, 10V. This part is actively manufactured, RoHS3 compliant, and uses the D2PAK package. Operating temperature range is -55°C to 150°C. Power dissipation is rated at 125W (Tc). This option is suitable only for applications where the lower current rating is acceptable.

All substitute parts maintain RoHS3 compliance, MSL 1 rating, and D2PAK surface mount packaging. Selection should be based on specific application current requirements and thermal design constraints.

Frequently Asked Questions (FAQ)

Q: Can the IPB200N25N3GATMA1 be used as a direct replacement for the IRFS38N20DPBF?

A: Yes. The IPB200N25N3GATMA1 meets all critical substitution parameters: it maintains D2PAK packaging, exceeds the 200V Vdss requirement with 250V rating, provides 64A continuous drain current (above the 43A requirement), and is RoHS3 compliant. The higher voltage and current ratings provide additional design margin. Gate charge (86nC) and input capacitance (7100pF @ 100V) are comparable to the original specifications.

Q: Why does the STB40NF20 have a lower operating temperature maximum (150°C vs. 175°C)?

A: The STB40NF20 is specified with a maximum junction temperature of 150°C, which is 25°C lower than the IRFS38N20DPBF specification of 175°C. This difference reflects the thermal design characteristics of the STripFET™ technology used in this device. Applications operating near the upper temperature limit should verify compatibility with this specification.

Q: Are all substitute parts available in the same D2PAK package?

A: Yes. All substitute parts listed use the D2PAK (TO-263-3) surface mount package, ensuring mechanical and thermal compatibility with PCB layouts designed for the IRFS38N20DPBF.

Q: What is the significance of on-resistance (Rds On) differences between parts?

A: On-resistance directly affects power dissipation and thermal performance. Lower on-resistance values reduce I²R losses. For example, the IPB200N25N3GATMA1 has 20mOhm on-resistance compared to the original 54mOhm, resulting in significantly lower power dissipation at the same current levels. However, on-resistance alone does not prevent substitution if other electrical and mechanical parameters are met.

Q: Can parts with lower current ratings (STB30NF20 at 30A, PHB33NQ20T,118 at 32.7A) be used in place of the 43A IRFS38N20DPBF?

A: These parts can be used only if the application circuit does not require the full 43A continuous drain current. Circuit redesign or thermal analysis may be necessary to confirm compatibility. The lower current rating represents a design constraint that must be evaluated against specific application requirements.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed maintain RoHS3 compliance and MSL 1 (unlimited) moisture sensitivity level, meeting modern environmental and reliability standards.

Q: What is the difference between the Infineon OptiMOS™ and Nexperia TrenchMOS™ technologies?

A: Both are advanced MOSFET technologies that provide improved performance characteristics. The OptiMOS™ series (IPB200N25N3GATMA1) emphasizes lower on-resistance and higher current capability. The TrenchMOS™ series (PSMN057-200B,118 and PHB33NQ20T,118) offers optimized gate charge and switching characteristics. Technology differences do not prevent substitution if electrical and mechanical parameters are met.

Q: Why is the IPB200N25N3GATMA1 listed as the manufacturer-recommended substitute?

A: Infineon Technologies, the original manufacturer of the IRFS38N20DPBF, recommends the IPB200N25N3GATMA1 as the direct replacement. This recommendation reflects engineering validation and ensures compatibility with the original design intent. The part is actively manufactured and maintains the same manufacturer support and quality standards.

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