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IRFS3806PBF N-Channel 60V 43A MOSFET Equivalent & Substitute Parts
Part Overview
The IRFS3806PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage and 43A continuous drain current in a D2PAK surface mount package. This device is part of the HEXFET® series and is classified as discontinued at DiGi Electronics. Due to its discontinued status, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 60 | V |
| Continuous Drain Current (Id) @ 25°C | 43 | A (Tc) |
| On-Resistance (Rds On) @ 25A, 10V | 15.8 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 50µA | 4 | V |
| Gate Charge (Qg) @ 10V | 30 | nC |
| Power Dissipation (Max) | 71 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | D2PAK (TO-263-3) | Surface Mount |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the IRFS3806PBF is determined by the following critical parameters:
Primary Substitution Criteria:
- Drain-to-Source Voltage (Vdss): Must be ≥60V to maintain voltage margin
- Continuous Drain Current (Id): Must be ≥43A to support circuit current requirements
- Package Type: Must be D2PAK (TO-263-3) for mechanical and thermal compatibility
- On-Resistance (Rds On): Should be comparable to minimize thermal and efficiency changes
- Operating Temperature Range: Must support -55°C to 175°C
- Surface Mount Configuration: Required for PCB compatibility
Substitute parts are grouped into two categories:
Category A - Direct Voltage/Current Equivalents (60V Rating): Parts maintaining the 60V Vdss specification with drain current ratings at or above 43A. These provide the closest electrical and thermal performance match.
Category B - Upgraded Voltage Rating (75V-100V): Parts with higher Vdss ratings (75V or 100V) that operate within the same gate drive voltage and package constraints. These provide enhanced voltage margin and are suitable when circuit design permits higher voltage tolerance.
All substitute parts listed maintain ROHS3 compliance, surface mount D2PAK packaging, and operating temperature range compatibility with the original IRFS3806PBF.
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ 25°C (A) | Rds On (mOhm) | Qg (nC) | Power Diss. (W) | Package | Status |
|---|---|---|---|---|---|---|---|---|
| IRFS3806PBF | Infineon | 60 | 43 (Tc) | 15.8 @ 25A, 10V | 30 @ 10V | 71 | D2PAK | Discontinued |
| BUK7613-60E,118 | Nexperia | 60 | 58 (Tc) | 13 @ 15A, 10V | 22.9 @ 10V | 96 | D2PAK | Active |
| FDB13AN06A0 | onsemi | 60 | 62 (Tc) | 13.5 @ 62A, 10V | 29 @ 10V | 115 | D2PAK | Active |
| SQM60N06-15_GE3 | Vishay Siliconix | 60 | 56 (Tc) | 15 @ 30A, 10V | 50 @ 10V | 107 | D2PAK | Active |
| PSMN015-60BS,118 | Nexperia | 60 | 50 (Tc) | 14.8 @ 15A, 10V | 20.9 @ 10V | 86 | D2PAK | Active |
| STB55NF06T4 | STMicroelectronics | 60 | 50 (Tc) | 18 @ 27.5A, 10V | 60 @ 10V | 110 | D2PAK | Active |
| RSJ400N06FRATL | Rohm Semiconductor | 60 | 40 (Ta) | 16 @ 40A, 10V | 52 @ 10V | 50 | D2PAK | Active |
| IXTA70N075T2 | IXYS | 75 | 70 (Tc) | 12 @ 25A, 10V | 46 @ 10V | 150 | D2PAK | Active |
| IPB50N10S3L16ATMA1 | Infineon | 100 | 50 (Tc) | 15.4 @ 50A, 10V | 64 @ 10V | 100 | D2PAK | Active |
Engineering Selection Recommendations
For Direct Replacement (60V Category):
Select from BUK7613-60E,118, FDB13AN06A0, SQM60N06-15_GE3, PSMN015-60BS,118, or STB55NF06T4 when the circuit design requires exact voltage specification matching and the application does not permit voltage derating. All these parts are active products with ROHS3 compliance and D2PAK packaging. BUK7613-60E,118 carries AEC-Q101 automotive qualification, suitable for automotive applications. FDB13AN06A0 offers the highest drain current rating (62A) and power dissipation (115W), providing maximum thermal headroom. PSMN015-60BS,118 provides balanced performance with 50A rating and lower gate charge (20.9 nC).
For Upgraded Voltage Margin (75V-100V Category):
Select IXTA70N075T2 (75V) or IPB50N10S3L16ATMA1 (100V) when circuit design permits higher voltage tolerance and enhanced reliability margin is required. IXTA70N075T2 provides 70A drain current with improved on-resistance (12 mOhm). IPB50N10S3L16ATMA1, from Infineon's OptiMOS™ series, offers 100V rating with 50A current and is an active product with full ROHS3 compliance.
For Automotive Applications:
BUK7613-60E,118 and RSJ400N06FRATL both carry AEC-Q101 qualification. BUK7613-60E,118 is preferred due to higher current rating (58A) and lower on-resistance (13 mOhm).
Inventory and Availability:
All recommended substitutes are active products with substantial inventory levels. FDB13AN06A0 has the highest inventory (15,265 pcs), followed by STB55NF06T4 (18,852 pcs), ensuring supply chain continuity.
Frequently Asked Questions (FAQ)
Q1: Can I use a 75V or 100V rated MOSFET as a direct replacement for the 60V IRFS3806PBF?
A: Yes. Higher voltage-rated MOSFETs (IXTA70N075T2 at 75V or IPB50N10S3L16ATMA1 at 100V) are electrically compatible substitutes. The circuit will operate safely at 60V with these parts. However, verify that the higher gate charge and input capacitance do not negatively impact gate drive circuit performance or switching speed requirements.
Q2: What is the primary difference between the 60V substitute options?
A: All 60V substitutes maintain the same drain-to-source voltage specification. Key differences are drain current rating, on-resistance, gate charge, and power dissipation. FDB13AN06A0 offers the highest current (62A) and power dissipation (115W). PSMN015-60BS,118 has the lowest gate charge (20.9 nC), beneficial for fast switching applications. STB55NF06T4 has higher on-resistance (18 mOhm), which may increase thermal dissipation in high-current applications.
Q3: Are all substitute parts in the same D2PAK package?
A: Yes. All listed substitute parts use the D2PAK (TO-263-3) surface mount package, ensuring mechanical and thermal compatibility with the original IRFS3806PBF PCB layout. No package rework is required.
Q4: Which substitute is best for automotive applications?
A: BUK7613-60E,118 is qualified to AEC-Q101 automotive standard and is the preferred choice for automotive designs. It provides 58A drain current, 13 mOhm on-resistance, and 96W power dissipation. RSJ400N06FRATL also carries AEC-Q101 qualification but has a lower current rating (40A).
Q5: What does "Tc" versus "Ta" mean in the drain current specification?
A: "Tc" indicates the current rating at case temperature (typically 25°C), representing the device's thermal capability. "Ta" indicates the rating at ambient temperature. Tc ratings are generally higher and more conservative for thermal design. RSJ400N06FRATL uses Ta rating (40A), while most other parts use Tc rating.
Q6: How does gate charge (Qg) affect my circuit design?
A: Gate charge determines the energy required to switch the MOSFET on and off. Higher gate charge (e.g., STB55NF06T4 at 60 nC) requires more gate drive current and may slow switching speed. Lower gate charge (e.g., PSMN015-60BS,118 at 20.9 nC) enables faster switching and reduces gate drive power loss. Verify your gate driver can supply the required charge for your selected part.
Q7: Can I use RSJ400N06FRATL as a substitute if my circuit requires 43A continuous current?
A: RSJ400N06FRATL is rated for 40A (Ta), which is below the 43A requirement of the IRFS3806PBF. This part is not recommended for applications requiring sustained 43A operation. Select a part with ≥43A rating such as BUK7613-60E,118 (58A), FDB13AN06A0 (62A), SQM60N06-15_GE3 (56A), PSMN015-60BS,118 (50A), or STB55NF06T4 (50A).
Q8: Are all substitute parts RoHS3 compliant?
A: Yes. All listed substitute parts are ROHS3 compliant, meeting environmental and regulatory requirements equivalent to the original IRFS3806PBF.
Q9: What is the thermal performance difference between substitutes?
A: Power dissipation ratings vary: FDB13AN06A0 (115W), IXTA70N075T2 (150W), and IPB50N10S3L16ATMA1 (100W) offer higher thermal capacity than the original (71W). Lower on-resistance values (BUK7613-60E,118 at 13 mOhm, IXTA70N075T2 at 12 mOhm) reduce conduction losses. Verify PCB thermal design and heatsinking capability match the selected part's power dissipation.
Q10: Which substitute offers the best overall performance match to IRFS3806PBF?
A: BUK7613-60E,118 provides the closest performance match: identical 60V rating, higher current (58A vs. 43A), lower on-resistance (13 mOhm vs. 15.8 mOhm), and comparable gate charge (22.9 nC vs. 30 nC). It is an active product with AEC-Q101 qualification and substantial inventory availability.
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