IRFS3607PBF N-Channel MOSFET 75V 80A Equivalent & Substitute Parts

Part Overview

The IRFS3607PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage and 80A continuous drain current in a D2PAK surface mount package. This device is classified as discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design requirements and production continuity. The part belongs to the HEXFET® series and operates across the temperature range of -55°C to 175°C (TJ).

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	80	A (Tc)
On-State Resistance (Rds On) @ 46A, 10V	9	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 100µA	4	V
Gate Charge (Qg) @ 10V	84	nC
Power Dissipation (Max)	140	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the IRFS3607PBF is determined by the following critical parameters:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 75V or higher
Continuous Drain Current (Id): 80A or higher at 25°C (Tc)
Package Type: D2PAK (TO-263-3) surface mount configuration
Operating Temperature Range: -55°C to 175°C (TJ) minimum
RoHS Compliance: ROHS3 Compliant

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower or equivalent values improve performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Higher ratings provide thermal margin
Vgs(th): Threshold voltage within ±20V gate-source rating

Substitute parts are grouped into two categories: Direct Equivalents (matching all primary criteria with minimal parameter variation) and Enhanced Alternatives (exceeding primary specifications while maintaining package and thermal compatibility).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Pd Max (W)	Package	Status
IRFS3607PBF	Infineon	75	80	9 @ 46A, 10V	84 @ 10V	140	D2PAK	Discontinued
IPB049NE7N3GATMA1	Infineon	75	80	4.9 @ 80A, 10V	68 @ 10V	150	D2PAK	Obsolete
IPB054N08N3GATMA1	Infineon	80	80	5.4 @ 80A, 10V	69 @ 10V	150	D2PAK	Active
IPB80N08S207ATMA1	Infineon	75	80	7.1 @ 80A, 10V	180 @ 10V	300	D2PAK	Active
IPB80N08S2L07ATMA1	Infineon	75	80	6.8 @ 80A, 10V	233 @ 10V	300	D2PAK	Last Time Buy
BUK9609-75A,118	NXP USA Inc.	75	75	8.5 @ 25A, 10V	—	230	D2PAK	Active
FDB045AN08A0	onsemi	75	90	4.5 @ 80A, 10V	138 @ 10V	310	D2PAK	Active
HUF75545S3ST	onsemi	80	75	10 @ 75A, 10V	235 @ 20V	270	D2PAK	Active
PSMN008-75B,118	Nexperia USA Inc.	75	75	8.5 @ 25A, 10V	122.8 @ 10V	230	D2PAK	Active
PSMN012-80BS,118	Nexperia USA Inc.	80	74	11 @ 15A, 10V	43 @ 10V	148	D2PAK	Active
PSMN8R7-80BS,118	Nexperia USA Inc.	80	90	8.7 @ 10A, 10V	52 @ 10V	170	D2PAK	Active

Engineering Selection Recommendations

Tier 1: Primary Substitutes (Infineon OptiMOS™ Series)

IPB054N08N3GATMA1 is the recommended primary substitute. This part maintains the 80A continuous drain current specification, achieves 80V Vdss (exceeding the 75V requirement), and is currently in Active production status. The OptiMOS™ technology delivers superior on-state resistance (5.4 mOhm) compared to the original IRFS3607PBF (9 mOhm), reducing conduction losses. Power dissipation rating of 150W provides adequate thermal margin. RoHS3 compliance and unlimited moisture sensitivity level (MSL 1) match the original part's environmental qualifications.

IPB049NE7N3GATMA1 provides an alternative within the Infineon family, offering the lowest gate charge (68 nC) among Infineon substitutes, which reduces switching losses in high-frequency applications. However, this part carries Obsolete status, limiting long-term availability.

Tier 2: Enhanced Alternatives (Higher Power Dissipation)

IPB80N08S207ATMA1 and IPB80N08S2L07ATMA1 both deliver 300W power dissipation, providing significant thermal headroom for demanding applications. Both maintain 75V Vdss and 80A Id specifications. IPB80N08S207ATMA1 is Active; IPB80N08S2L07ATMA1 is Last Time Buy. These parts are suitable for applications requiring enhanced thermal performance or where gate charge characteristics (180 nC and 233 nC respectively) are acceptable.

Tier 3: Cross-Manufacturer Alternatives

FDB045AN08A0 (onsemi PowerTrench®) meets all primary criteria with 75V Vdss, 90A Id (exceeding specification), and 310W power dissipation. Active production status and RoHS3 compliance ensure availability. The 4.5 mOhm on-state resistance is superior to the original part.

PSMN8R7-80BS,118 (Nexperia) provides 80V Vdss and 90A Id with Active status. The 8.7 mOhm on-state resistance and 52 nC gate charge offer favorable switching characteristics for high-frequency applications.

BUK9609-75A,118 (NXP TrenchMOS™) matches 75V Vdss but delivers 75A Id (below the 80A requirement). This part is suitable only for applications where 75A continuous current is acceptable. AEC-Q101 automotive qualification is available if required.

PSMN012-80BS,118 (Nexperia) provides 80V Vdss but delivers only 74A Id, making it marginal for 80A applications. This part is not recommended as a primary substitute.

HUF75545S3ST (onsemi UltraFET™) delivers 80V Vdss but only 75A Id. On-state resistance of 10 mOhm is comparable to the original part. This device is suitable only where 75A continuous current meets application requirements.

Compliance and Certification:

All recommended substitutes maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity ratings. Operating temperature ranges (-55°C to 175°C TJ) are consistent across all alternatives. No additional qualification testing is required based on provided certifications.

Frequently Asked Questions (FAQ)

Q1: Can I directly replace IRFS3607PBF with IPB054N08N3GATMA1 without circuit modifications?

A: Yes. IPB054N08N3GATMA1 maintains identical package (D2PAK), pin configuration, and electrical ratings (80A Id, 75V+ Vdss). The improved on-state resistance (5.4 mOhm vs. 9 mOhm) reduces power dissipation, benefiting thermal performance. No circuit modifications are required.

Q2: What is the difference between Infineon OptiMOS™ and HEXFET® technology in these parts?

A: Both are N-Channel MOSFET technologies optimized for low on-state resistance. OptiMOS™ (used in IPB049NE7N3GATMA1, IPB054N08N3GATMA1, and IPB80N08S series) represents newer generation technology with improved gate charge and switching characteristics. HEXFET® (IRFS3607PBF) is the legacy technology. Functionally, both are compatible in D2PAK packages with matching voltage and current ratings.

Q3: Why do some substitutes have higher gate charge (Qg) values?

A: Gate charge affects switching speed and driver power requirements. Higher Qg values (e.g., 233 nC in IPB80N08S2L07ATMA1) indicate larger die size, which increases power dissipation capability but requires more gate drive energy. Lower Qg values (e.g., 68 nC in IPB049NE7N3GATMA1) reduce switching losses in high-frequency applications. Selection depends on circuit operating frequency and thermal requirements.

Q4: Is the 80V rating of IPB054N08N3GATMA1 a problem if my circuit uses 75V?

A: No. The 80V Vdss rating provides additional voltage margin and is fully compatible with 75V circuit operation. Higher voltage ratings do not degrade performance at lower voltages; they only provide additional safety margin.

Q5: Can I use parts with lower continuous current ratings (e.g., HUF75545S3ST at 75A) in place of the 80A IRFS3607PBF?

A: Only if your application's actual continuous current requirement is 75A or less. If your design requires 80A continuous operation, parts rated below 80A will exceed their thermal limits and reduce reliability. Verify actual circuit current draw before selecting lower-rated alternatives.

Q6: What is the significance of "Last Time Buy" status for IPB80N08S2L07ATMA1?

A: Last Time Buy indicates the manufacturer will accept orders until a specified cutoff date, after which the part becomes unavailable. This part should be selected only if immediate availability is critical. For long-term production, Active status parts (IPB054N08N3GATMA1, IPB80N08S207ATMA1, FDB045AN08A0) are preferred.

Q7: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts carry ROHS3 Compliant status, matching the original IRFS3607PBF. All parts also maintain MSL 1 (Unlimited) moisture sensitivity level, ensuring compatibility with standard PCB assembly processes.

Q8: Which substitute offers the best on-state resistance performance?

A: FDB045AN08A0 (onsemi) and IPB049NE7N3GATMA1 (Infineon) both deliver 4.5-4.9 mOhm on-state resistance, approximately 50% lower than the original 9 mOhm specification. This reduces conduction losses and improves efficiency in power conversion applications.

Q9: Do I need to change my PCB layout when switching from IRFS3607PBF to a substitute?

A: No. All substitute parts use identical D2PAK (TO-263-3) package with the same pin configuration and footprint. PCB layout, thermal management, and gate drive circuitry remain unchanged.

Q10: What is the difference between Cut Tape (CT) and Tape & Reel (TR) packaging?

A: Both are surface mount delivery formats. Tape & Reel (TR) is standard for high-volume production and automated assembly. Cut Tape (CT) is used for lower volumes or manual assembly. Electrical specifications and performance are identical; packaging format affects only procurement and assembly logistics.

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