IRFS3507 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFS3507 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage with 97A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, which necessitates identification of active equivalent and substitute parts for new designs and production continuity. The HEXFET® series component delivers 190W maximum power dissipation and operates across the industrial temperature range of -55°C to 175°C.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	97	A
On-State Resistance (Rds On) @ 58A, 10V	8.8	mOhm
Gate Threshold Voltage (Vgs(th)) @ 100µA	4	V
Gate Charge (Qg) @ 10V	130	nC
Power Dissipation (Max)	190	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	—
Mounting Type	Surface Mount	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the IRFS3507 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 75V minimum
Continuous Drain Current (Id): 97A minimum at 25°C
On-State Resistance (Rds On): 8.8mOhm or lower at rated conditions
Package Type: D2PAK (TO-263-3) surface mount
Gate Drive Voltage: 10V compatible
Operating Temperature: -55°C to 175°C minimum

Substitution Logic: Substitute parts are grouped into two categories based on electrical performance alignment:

Category A - Direct Voltage/Current Match (75V, ≥97A): Parts maintaining the 75V Vdss rating with drain current at or above 97A. These provide the closest functional equivalence to the IRFS3507.

Category B - Voltage/Current Trade-off (75V-80V, 74A-90A): Parts with slightly elevated Vdss (75V-80V) or reduced drain current (74A-90A) but superior on-state resistance characteristics. These are suitable where the application permits minor parameter relaxation within the D2PAK package constraint.

All substitute candidates maintain D2PAK packaging, surface mount configuration, and industrial temperature range compatibility.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Pd Max (W)	Status	RoHS
IRFS3507	Infineon	75	97	8.8	130	190	Obsolete	Non-compliant
STH140N8F7-2	STMicroelectronics	80	90	4	96	200	Active	ROHS3
HUF75545S3ST	onsemi	80	75	10	235	270	Active	ROHS3
PSMN008-75B,118	Nexperia	75	75	8.5	122.8	230	Active	ROHS3
PSMN012-80BS,118	Nexperia	80	74	11	43	148	Active	ROHS3
PSMN8R7-80BS,118	Nexperia	80	90	8.7	52	170	Active	ROHS3
STB140NF55T4	STMicroelectronics	55	80	8	142	300	Active	ROHS3
STB140NF75T4	STMicroelectronics	75	120	7.5	218	310	Active	ROHS3
STB75NF75LT4	STMicroelectronics	75	75	11	90	300	Active	ROHS3
BUK9609-40B,118	Nexperia	40	75	7	32	157	Active	ROHS3
BUK9609-75A,118	NXP USA	75	75	8.5	—	230	Active	—

Engineering Selection Recommendations

Primary Substitute Candidates:

STH140N8F7-2 (STMicroelectronics): Active product with ROHS3 compliance. Rated 80V/90A with superior on-state resistance (4mOhm) and lower gate charge (96nC). Suitable for applications where the 97A requirement can be met with 90A continuous rating and elevated voltage margin is acceptable. DeepGATE™ and STripFET™ VII technology provides enhanced performance characteristics.

PSMN8R7-80BS,118 (Nexperia): Active product with ROHS3 compliance. Rated 80V/90A with on-state resistance of 8.7mOhm, closely matching the IRFS3507 at 8.8mOhm. Reduced gate charge (52nC) improves switching performance. Suitable for direct functional replacement where 80V rating is acceptable.

STB140NF75T4 (STMicroelectronics): Active product with ROHS3 compliance. Rated 75V/120A with superior on-state resistance (7.5mOhm) and highest power dissipation (310W). Exceeds IRFS3507 current rating by 23A. Recommended for applications requiring enhanced thermal performance and current margin.

Secondary Substitute Candidates:

PSMN008-75B,118 (Nexperia): Active product with ROHS3 compliance. Maintains 75V rating with 75A continuous current. On-state resistance of 8.5mOhm is comparable to IRFS3507. Suitable where current requirement can be reduced to 75A.

HUF75545S3ST (onsemi): Active product with ROHS3 compliance. Rated 80V/75A with UltraFET™ technology. Higher on-state resistance (10mOhm) and gate charge (235nC) indicate different switching characteristics. Suitable for lower-frequency applications.

Compliance Considerations:

All recommended active substitutes carry ROHS3 compliance, addressing environmental regulatory requirements absent in the obsolete IRFS3507 (RoHS non-compliant). All candidates maintain D2PAK packaging and surface mount configuration. Operating temperature range (-55°C to 175°C) is preserved across all substitutes.

Frequently Asked Questions (FAQ)

Q: Can the STH140N8F7-2 directly replace the IRFS3507 in existing designs?

A: The STH140N8F7-2 is electrically compatible with the IRFS3507 in D2PAK package. The 80V rating provides 5V additional margin over the 75V IRFS3507 specification. The 90A continuous current rating is 7A below the IRFS3507 specification; applications operating at or below 90A are suitable for direct substitution. Superior on-state resistance (4mOhm vs. 8.8mOhm) reduces power dissipation.

Q: What is the difference between the PSMN8R7-80BS,118 and PSMN012-80BS,118?

A: Both are Nexperia TrenchMOS™ devices in D2PAK package rated 80V. The PSMN8R7-80BS,118 is rated 90A continuous with 8.7mOhm on-state resistance. The PSMN012-80BS,118 is rated 74A continuous with 11mOhm on-state resistance. The PSMN8R7-80BS,118 provides higher current capacity and lower resistance, making it the closer substitute to the IRFS3507.

Q: Why is the BUK9609-40B,118 listed if it has only 40V rating?

A: The BUK9609-40B,118 is included as a reference point from the IRFS3507 substitute list provided in the input data. Its 40V rating is insufficient for applications requiring 75V operation. This part is not recommended as a substitute for the IRFS3507 in standard 75V applications.

Q: Are all substitute parts available in the same D2PAK package?

A: All substitute parts listed are specified in D2PAK (TO-263-3) surface mount package configuration, ensuring mechanical and thermal interface compatibility with the IRFS3507 footprint.

Q: What is the significance of gate charge (Qg) differences between substitutes?

A: Gate charge affects switching speed and driver circuit requirements. The IRFS3507 specifies 130nC at 10V. Lower gate charge (STH140N8F7-2 at 96nC) enables faster switching with reduced driver power dissipation. Higher gate charge (HUF75545S3ST at 235nC) requires more driver current but may provide improved noise immunity in certain applications.

Q: Which substitute offers the best thermal performance?

A: The STB140NF75T4 provides the highest maximum power dissipation rating at 310W, compared to the IRFS3507 at 190W. This represents a 63% increase in thermal capacity, beneficial for high-frequency or high-current applications requiring enhanced thermal margin.

Q: Is RoHS compliance mandatory for substitution?

A: RoHS compliance is a regulatory requirement for new product designs and manufacturing in most markets. All active substitute parts carry ROHS3 compliance, whereas the obsolete IRFS3507 is RoHS non-compliant. Substitution with compliant parts aligns with current environmental regulations.

Q: Can the STB140NF75T4 be used in applications designed for 97A operation?

A: Yes. The STB140NF75T4 is rated 120A continuous at 25°C, exceeding the IRFS3507 requirement of 97A by 23A. The 75V rating matches the IRFS3507 specification. The 7.5mOhm on-state resistance is superior to the IRFS3507 at 8.8mOhm, reducing conduction losses.

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