IRFS33N15DTRLP N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFS33N15DTRLP is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 150V drain-to-source voltage with 33A continuous drain current in a surface mount D2PAK package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

The IRFS33N15DTRLP belongs to the HEXFET® series and is designed for applications requiring moderate voltage and current handling in compact surface mount form factors. Due to its obsolete status, identifying functionally equivalent active alternatives ensures design continuity and supply chain reliability.

Substiute Parts

IRFS33N15DTRLP
Infineon TechnologiesIn Stock: 6741IRFS33N15DTRLP Datasheet
IRFS33N15DTRLP
Current Part
IRFS4615TRLPBF
Infineon TechnologiesIn Stock: 1683IRFS4615TRLPBF Datasheet
IRFS4615TRLPBF
MFR Recommended
FDB2572
onsemiIn Stock: 32623FDB2572 Datasheet
FDB2572
MFR Recommended

Key Parameters

Parameter Value Specification
Drain-to-Source Voltage (Vdss) 150 V Maximum rated voltage
Continuous Drain Current (Id) @ 25°C 33A (Tc) At case temperature
On-State Resistance (Rds On) 56 mOhm @ 20A, 10V Maximum at specified conditions
Gate Threshold Voltage (Vgs(th)) 5.5V @ 250µA Maximum
Gate Charge (Qg) 90 nC @ 10V Maximum
Input Capacitance (Ciss) 2020 pF @ 25V Maximum
Power Dissipation 3.8W (Ta), 170W (Tc) Maximum
Operating Temperature Range -55°C to 175°C Junction temperature
Package Type D2PAK (TO-263-3) Surface mount, 2 leads + tab
Product Status Obsolete No longer in active production

Substitute Part Grouping Explanation

Substitution eligibility for the IRFS33N15DTRLP is determined by strict alignment of the following critical parameters:

Primary Matching Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal 150V
  • Continuous Drain Current (Id): Must equal or exceed 33A at case temperature
  • Package Type: Must be D2PAK (TO-263-3) surface mount
  • Operating Temperature Range: Must span -55°C to 175°C
  • FET Type: Must be N-Channel MOSFET

Secondary Compatibility Parameters:

  • On-State Resistance (Rds On): Lower values indicate improved performance
  • Gate Charge (Qg): Lower values reduce switching losses
  • Input Capacitance (Ciss): Lower values improve switching speed
  • Gate Threshold Voltage (Vgs(th)): Must be compatible with drive circuitry
  • Maximum Gate Voltage (Vgs): Must accommodate drive voltage levels

The substitute parts identified meet all primary matching criteria and maintain compatibility across secondary parameters within acceptable engineering tolerances for direct replacement applications.

Parameter Comparison

Parameter IRFS33N15DTRLP (Main) IRFS4615TRLPBF (Infineon) FDB2572 (onsemi)
Manufacturer Infineon Technologies Infineon Technologies onsemi
Drain-to-Source Voltage (Vdss) 150V 150V 150V
Continuous Drain Current (Id) @ 25°C 33A (Tc) 33A (Tc) 29A (Tc)
On-State Resistance (Rds On) 56 mOhm @ 20A, 10V 42 mOhm @ 21A, 10V 54 mOhm @ 9A, 10V
Gate Threshold Voltage (Vgs(th)) 5.5V @ 250µA 5V @ 100µA 4V @ 250µA
Gate Charge (Qg) 90 nC @ 10V 40 nC @ 10V 34 nC @ 10V
Input Capacitance (Ciss) 2020 pF @ 25V 1750 pF @ 50V 1770 pF @ 25V
Maximum Gate Voltage (Vgs) ±30V ±20V ±20V
Power Dissipation (Tc) 170W 144W 135W
Operating Temperature Range -55°C to 175°C -55°C to 175°C -55°C to 175°C
Package Type D2PAK (TO-263-3) D2PAK (TO-263-3) D2PAK (TO-263-3)
Product Status Obsolete Active Active
RoHS Compliance ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

IRFS4615TRLPBF (Infineon Technologies) - Primary Substitute

The IRFS4615TRLPBF is the manufacturer-recommended substitute for the obsolete IRFS33N15DTRLP. Both devices are from Infineon's HEXFET® series and share identical voltage and current ratings (150V, 33A). The IRFS4615TRLPBF offers improved electrical characteristics with lower on-state resistance (42 mOhm vs. 56 mOhm), reduced gate charge (40 nC vs. 90 nC), and lower input capacitance (1750 pF vs. 2020 pF). The device maintains full compatibility with the D2PAK package and operating temperature range. Product status is active, ensuring long-term availability. RoHS3 compliance and unlimited moisture sensitivity level match the original specification. This substitute is suitable for direct replacement in existing designs without circuit modification.

FDB2572 (onsemi) - Alternative Substitute

The FDB2572 provides an alternative from onsemi's PowerTrench® series, meeting the 150V voltage requirement with 29A continuous drain current (slightly below the 33A specification). On-state resistance is comparable at 54 mOhm, with significantly lower gate charge (34 nC) and input capacitance (1770 pF). The device is housed in the same D2PAK package with matching operating temperature range and compliance certifications. Product status is active. The FDB2572 is suitable for applications where the 29A current rating is sufficient, offering improved switching performance characteristics. Gate threshold voltage is lower (4V), requiring verification of drive circuit compatibility.

Selection Criteria:

  • For direct replacement with identical current rating and improved performance: IRFS4615TRLPBF
  • For applications with reduced current requirements and enhanced switching characteristics: FDB2572
  • Both substitutes maintain RoHS3 compliance and unlimited moisture sensitivity
  • Both are actively manufactured, ensuring supply chain continuity

Frequently Asked Questions (FAQ)

Q: Can the IRFS4615TRLPBF directly replace the IRFS33N15DTRLP without circuit modifications?

A: Yes. The IRFS4615TRLPBF matches the IRFS33N15DTRLP in voltage rating (150V), current rating (33A), and D2PAK package. Improved electrical characteristics (lower Rds On, Qg, and Ciss) provide enhanced performance. Gate threshold voltage is slightly lower (5V vs. 5.5V), which is compatible with standard drive circuits. No circuit modifications are required.

Q: What is the difference between the two substitute parts?

A: The IRFS4615TRLPBF (Infineon) maintains the full 33A current rating with improved efficiency. The FDB2572 (onsemi) provides 29A continuous current with superior switching characteristics (lower gate charge and capacitance). Selection depends on current requirements and switching performance priorities.

Q: Are both substitute parts RoHS compliant?

A: Yes. Both IRFS4615TRLPBF and FDB2572 are ROHS3 compliant with unlimited moisture sensitivity level (MSL 1), matching the original IRFS33N15DTRLP specification.

Q: Can the FDB2572 be used in applications requiring the full 33A rating?

A: The FDB2572 is rated for 29A continuous drain current at case temperature, which is below the 33A requirement. Use is limited to applications where the actual operating current does not exceed 29A. For applications requiring the full 33A capability, the IRFS4615TRLPBF is the appropriate choice.

Q: What is the impact of lower gate charge on circuit performance?

A: Lower gate charge (40 nC for IRFS4615TRLPBF and 34 nC for FDB2572 versus 90 nC for the original) reduces switching losses and allows faster switching transitions. This improves overall circuit efficiency and thermal performance, particularly in high-frequency switching applications.

Q: Are the packages physically identical?

A: Yes. All three devices use the D2PAK (TO-263-3) surface mount package with 2 leads plus tab. Physical dimensions and PCB footprints are identical, enabling direct board-level substitution.

Q: What is the significance of the lower maximum gate voltage on the substitutes?

A: The IRFS33N15DTRLP supports ±30V maximum gate voltage, while both substitutes support ±20V. For applications using standard ±10V or ±15V drive circuits, this difference is not significant. Applications using ±30V drive signals require verification that the substitute gate drive circuit operates within ±20V limits.

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