IRFS3307ZTRRPBF N-Channel 75V 120A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFS3307ZTRRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, part of the HEXFET® series. This device is rated for 75V drain-to-source voltage with 120A continuous drain current and 230W maximum power dissipation in a surface mount D2PAK package. The part is Active status and ROHS3 compliant, making it suitable for high-current switching applications requiring robust thermal performance.

Equivalent and substitute parts are identified when design requirements necessitate alternative sourcing due to inventory constraints, supply chain considerations, or specific packaging preferences while maintaining electrical and mechanical compatibility within the defined parameter tolerance.

Substiute Parts

IRFS3307ZTRRPBF

Infineon TechnologiesIn Stock: 2308IRFS3307ZTRRPBF Datasheet

Current PartRFQ

IRFS3307ZTRLPBF

Infineon TechnologiesIn Stock: 4904IRFS3307ZTRLPBF Datasheet

Parametric EquivalentRFQ

FDB060AN08A0

onsemiIn Stock: 19820FDB060AN08A0 Datasheet

MFR RecommendedRFQ

IXTA120N075T2

IXYSIn Stock: 957IXTA120N075T2 Datasheet

MFR RecommendedRFQ

STB140NF75T4

STMicroelectronicsIn Stock: 2807STB140NF75T4 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRFS3307ZTRRPBF are classified based on strict electrical and mechanical parameter alignment. The primary substitution criteria are:

Critical Parameters for Substitution:

• Drain to Source Voltage (Vdss): 75V (exact match required)
• FET Type: N-Channel (exact match required)
• Package: TO-263-3 / D2PAK surface mount (exact match required)
• Operating Temperature Range: -55°C to 175°C (exact match required)
• Technology: MOSFET (Metal Oxide) (exact match required)

Secondary Parameters (allowable variance):

• Continuous Drain Current (Id): 120A nominal; substitutes with 80A to 120A are acceptable based on application thermal management
• Rds On (Max): 5.8mOhm baseline; substitutes up to 7.7mOhm acceptable within thermal budget
• Gate Charge (Qg): 110nC baseline; substitutes between 78nC and 218nC acceptable for switching speed considerations
• Power Dissipation (Max): 230W baseline; substitutes with 250W to 310W provide enhanced thermal margin

Packaging Variance:

• Tape & Reel (TR) to Cut Tape (CT) & Digi-Reel® conversion acceptable for same device
• Tube packaging acceptable for lower-volume applications

Parameter Comparison

Engineering Selection Recommendations

IRFS3307ZTRLPBF (Infineon Technologies)

This substitute is a direct parametric equivalent to the main part, differing only in packaging format (Cut Tape & Digi-Reel® versus Tape & Reel). All electrical specifications, thermal ratings, and compliance certifications are identical. Selection is appropriate when procurement requires alternative packaging formats or when inventory availability favors this variant. Both parts maintain ROHS3 compliance and MSL 1 rating.

STB140NF75T4 (STMicroelectronics)

This substitute maintains identical Vdss (75V) and Id (120A) ratings with compatible package geometry (D2PAK). The Rds On specification of 7.5mOhm at 70A represents a 1.7mOhm increase relative to the main part, resulting in proportionally higher conduction losses. Gate charge is significantly higher at 218nC, indicating slower switching characteristics. Power dissipation rating of 310W exceeds the main part, providing enhanced thermal margin. This substitute is suitable for applications where thermal management is prioritized over switching speed efficiency. ROHS3 compliance and MSL 1 rating maintained.

IXTA120N075T2 (IXYS)

This substitute provides identical Vdss (75V) and Id (120A) specifications in TO-263AA package geometry, which is mechanically compatible with D2PAK footprints. The Rds On specification of 7.7mOhm at 60A represents a 1.9mOhm increase. Gate charge of 78nC is lower than the main part, indicating faster switching response. Power dissipation rating of 250W provides adequate thermal margin. This substitute is suitable for applications prioritizing switching speed efficiency. ROHS3 compliance and MSL 1 rating maintained. Packaging format (Tube) may require process adaptation for automated assembly.

FDB060AN08A0 (onsemi)

This substitute maintains Vdss (75V) with reduced continuous drain current rating of 80A (Tc), representing a 33% reduction from the main part's 120A specification. Rds On of 6.0mOhm at 80A is comparable to the main part. Gate charge of 95nC is lower, supporting faster switching. Power dissipation of 255W exceeds the main part. This substitute is applicable only in applications where the 80A current rating is sufficient and thermal design accommodates the reduced current capacity. Selection requires verification that application peak and continuous current demands do not exceed 80A. ROHS3 compliance and MSL 1 rating maintained.

Frequently Asked Questions (FAQ)

Q: Can IRFS3307ZTRLPBF be used as a direct replacement for IRFS3307ZTRRPBF?

A: Yes. IRFS3307ZTRLPBF is a parametric equivalent with identical electrical specifications. The only difference is packaging format: Cut Tape & Digi-Reel® versus Tape & Reel. Both parts are manufactured by Infineon, carry the same base product number (IRFS3307), and maintain identical performance characteristics. Substitution is direct without design modification.

Q: What is the primary difference between STB140NF75T4 and the main part?

A: STB140NF75T4 maintains identical voltage and current ratings but exhibits higher gate charge (218nC versus 110nC) and slightly higher Rds On (7.5mOhm versus 5.8mOhm). These differences result in slower switching speed and higher conduction losses. The substitute provides superior power dissipation capability (310W versus 230W), making it suitable for thermally demanding applications where switching speed is not critical.

Q: Is FDB060AN08A0 suitable for all applications using IRFS3307ZTRRPBF?

A: No. FDB060AN08A0 has a reduced continuous drain current rating of 80A compared to the main part's 120A. This substitute is only applicable in designs where application current requirements do not exceed 80A continuous operation. Applications requiring the full 120A capability must use one of the other substitutes or the main part.

Q: Are all substitute parts available in the same D2PAK package?

A: All substitutes use compatible D2PAK or TO-263 package variants (TO-263-3, TO-263AA, or TO-263AB). These packages share identical PCB footprints and thermal characteristics. IXTA120N075T2 is packaged in Tube format rather than Tape & Reel or Cut Tape, which may require process adaptation for automated assembly but maintains mechanical compatibility.

Q: What compliance certifications apply to all listed parts?

A: All parts listed—main and substitutes—are ROHS3 compliant, carry Moisture Sensitivity Level 1 (Unlimited), are REACH Unaffected, and share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications. All parts maintain Active product status.

Q: Which substitute offers the best switching speed performance?

A: IXTA120N075T2 provides the lowest gate charge specification at 78nC, indicating the fastest switching response. This characteristic is beneficial in high-frequency switching applications where minimizing switching losses is critical. However, this part carries a slightly higher Rds On specification (7.7mOhm), which may increase conduction losses.

Q: Can packaging format differences affect circuit performance?

A: Packaging format differences (Tape & Reel, Cut Tape & Digi-Reel®, or Tube) do not affect electrical performance or thermal characteristics. These differences relate only to supply and handling methods. Selection should be based on manufacturing process requirements and inventory management practices.